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March 14-16,2018
Shanghai New International Expo Centre

Dr. Hong Wu

Dr. Hong Wu
Assistant Director, Technology R&D
Semiconductor Manufacturing International Corp.

Dr. Hong Wu has more than 14 years of research and development experience in semiconductor device design/simulation/fabrication as well as process/module integration. His R&D experience covers a wide range of semiconductor fields (III-V, IV-IV, Si) and devices (CMOS, FLASH, BJT, photo-electronics). At Cornell University where he received his Ph.D. degree in electrical & computer engineering, he designed and fabricated the world’s first GaN/AlN quantum-well intersubband infrared photodetector. Besides, he also spent many efforts designing and optimizing GaN/SiC HBTs. After Cornell, he has been with several leading Chinese and US semiconductor companies. At SMIC, he has developed a couple of generations of CMOS devices (130/90nm, 40nm, etc.). At HHNEC/HHSIS, he developed and/or optimized a number of nodes of transistors ranging from 1.5V (0.15um logic) all the way to 32V devices. Later on, he was in charge of setting up and managing the device design & characterization team for the HHSIS 12" fab project (early form of Huali Microelectronics). At Microchip Technology, he managed a flash memory technology development team and was involved in the development of a couple of generations of advanced NOR flash memory (both stand-alone and embedded). Now, he leads an advanced CMOS device development team with a focus on 28nm generation at SMIC’s Technology R&D Center.