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March 14-16,2018
Shanghai New International Expo Centre

Dr. Simon M. Sze

 

Dr. Simon M. Sze

Honorary Chair Professor of NCTU

 

 

 

Dr. Simon M. Sze received his B. S. degree from the National Taiwan University, M. S. from the University of Washington, and Ph. D. from Stanford University, all in Electrical Engineering. Dr. Sze was with Bell Laboratories from 1963 to 1989 as a member of the Technical Staff. He joined the National Chiao Tung University (NCTU) from 1990 to 2006 as a Distinguished Chair Professor. At present, he is an Honorary Chair Professor at NCTU. Dr. Sze has served as Visiting Professor to many academic institutions including Anhui University, the University of Cambridge, Delft University, Stanford University, Swiss Federal Institute of Technology, and Tokyo Institute of Technology. He has made fundamental and pioneering contributions to semiconductor devices, especially the metal-semiconductor contacts, microwave devices, and submicron MOSFETs. Of particular importance is his discovery with Dr. D. Kahng of the floating-gate memory (FGM) effect which has subsequently given rise to a large family of memory devices including EPROM, EEPROM and Flash memory. FGM has enabled the invention of all modern electronic systems such as the digital cellular phone, tablet computer, personal digital assistant, smart IC card, digital camera, digital television, portable DVD, MP3 music player, pacemaker, implantable defibrillator, global positioning system (GPS), and anti-lock braking system (ABS). In addition, FGM is the mainstream storage technology for big data, cloud computing, internet of everything, and solid-state drive. Dr. Sze has authored or coauthored over three hundred technical papers. He has written and edited 16 books. His book “Physics of Semiconductor Devices” (Wiley, 1960; 2nd Ed, 1981; 3rd Ed, with K. K. Ng, 2007) is one of the most cited works in contemporary engineering and applied science publications (over 40,000 citations according to Google Scholar). Dr. Sze has received the IEEE J. J. Ebers Award, the National Endowed Chair Professor Award, the Flash Memory Summit Lifetime Achievement Award, and the National Science and Technology Prize. He is a Life Fellow of IEEE, an ITRI Laureate, an Academician of the Academia Sinica, a foreign member of the Chinese Academy of Engineering, and a member of the US National Academy of Engineering.