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+86.21.6027.8500
English
March 20-22, 2019
Shanghai New International Expo Centre

Dr. Chwan-Ying Lee

Dr. Chwan-Ying Lee
CEO, Hestia-Power

Biography

Dr. Chwan-Ying Lee has been working on design and development of Si-based semiconductors devices for more than 15 years. He has published more than 20 international papers and is the owner of more than 60 United States, China, and Taiwan patents. He is currently the founder and general manager of Hestia Power Inc., a company focused on the development and promotion of wide bandgap semiconductor devices. After launching a comprehensive portfolio of SiC Schottky diodes three years ago, Hestia Power Inc. has officially released their 650V and 1200V SiC MOSFET in 2017, and is planning to provide their proprietary SiC JMOS (JBS integrated SiC MOSFET) in 2018. Hestia Power Inc. will continue to cooperate closely with customers to expand the applications of SiC semiconductor devices for enhancing the market penetration.

Abstract

This talk will introduce the key features of Hestia Power’s SiC MOSFETs, from the aspects of design, manufacturing, testing and reliability. The design and characteristics of Hestia Power’s proprietary SiC JMOS (JBS integrated SiC MOSFET) will also be touched. Finally, the applications which requires the use of SiC MOSFET will be discussed.