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Dr. Zheng is Sr. Principal Design Engineer with Arm since 2010. He is a Memory Architect responsible for Arm memory compilers on various platforms from low power high density SRAM to high performance cache. He also represents Arm as the memory and process expert in fabless and foundry customer engagements to do design wins.
Prior to Arm, from 1997 to 2008 he was Sr. Staff Design Engineer with Intel Portland Technology Development. He designed SRAM, eFuse, temperature sensor, and received Intel Achievement Award for developing industry-leading SRAM memory technology with integrated leakage reduction. From 2008 to 2010 he was Director of Embedded Products with Aptic Semiconductor and designed embedded pseudo-SRAM.
Dr. Zheng received his PhD degree in Electronic Materials from Massachusetts Institute of Technology in 1996, his MS degree in Physics from Worcester Polytechnic Institute, and his BS degree in Applied Physics from Shanghai Jiao Tong University. Dr. Zheng has over 20 US patents and 13 technical publications.
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