|
Dr. Hongning Yang Tower Semiconductor Principal Engineer, Power Management Group |
|
个人简介 / Biography Dr. Yang serves as Technical Leader in the Power Management Group leading developments in 200V-300V SOI, high frequency 1.8V LDMOS, 90-140V RESURF and 65nm Bipolar-CMOS-DMOS (BCD). He joined Tower Semiconductor in 2015, after more than 15 years at Motorola (Freescale) where he was promoted to Senior Staff Technology Member working on Motorola’s Smart MOS and SOI technologies. Dr. Yang received B.S and M.S degrees in Solid State Physics from Shanghai JiaoTong University in China and holds a Ph.D in Solid State Physics from Rensselaer Polytechnic Institute in New York. He holds over 30 US patents in the fields of power LDMOS, analog and power IC integration & process engineering, and has published over 50 papers including two invited talks and one book. Dr. Yang served as an IEEE International Electron Devices (IEDM) QPC (quantum, power & compound semiconductor) committee member from 2008-2010. 摘要 / Abstract We report our development of a leading edge 140V bulk-Si RESURF technology and 200V operation voltage SOI technology based on TowerJazz 0.18um power management platform (TS18PM). For the first time in bulk Si, a BVDSS of 180V was achieved in high-side nLDMOS. This innovative technology provides significant competitive features such as low-Ron low-side/high-side LDMOS, bootstrap diodes and floating capabilities. In parallel, we have extended our robust SOI platform with typical BV of 200V, demonstrating further expansion to 200V operation with both nmos and pmos achieving typical BVDSS of 360V. Both technologies are aimed for Automotive & Industrial applications, as well as fast gate drivers, motor drivers, battery management and many other power applications. |
|
