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There are
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Date:
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Thursday, March 17, 2016
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Venue:
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Pudong Ballroom 4, Kerry Hotel Pudong, Shanghai
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With the power semiconductor devices are playing more and more important role in the field of the mobile communications, consumer electronics, new energy, transportation, power generation, the coming of “ Intelligently made in China" era will bring more new opportunities for development and growth of power semiconductor industry.
SEMI China will organize "Power Semiconductor Forum 2016” on Mar.17 ,2016 in Shanghai during SEMICON China 2016, the conference will cover topics including WBG (wide band gap) semiconductor materials and devices like GaN and SiC technology, IGBT applications in high speed raid , RF power devices for communications etc. We invite you to participate in this forum, and look forward to seeing you!
08:30-09:20
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Registration
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09:20-09:30
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Welcome Remark
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Session 1: III-V Semicondcutor and Communications
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Session 1:III-V Semicondcutor and Communications Moderator:
Daniel Tracy
Senior. Director of IRS, SEMI
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09:30-10:10
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Opening Keynote
GaN Power Amplifiers for 4G Base-station
Naiqian ZHANG
President of Dynax Semiconductor, Inc.
The Co-chair of SEMI China Power & Compound Semiconductor Commitee
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10:10-10:40
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Front End Power Management for the Next Generation
Ripley David
Sr. Technical Director of Skyworks Solutions Incoroporated
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10:40-11:10
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The GaAs and GaN foundry technologies in Sanan-IC
Richard Huang
TD VP of Xiamen San’an Optoelectronics Technology Co.Ltd.
A member company of SEMI China Power & Compound Semiconductor Committee
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11:10-11:40
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GaN-Si MOCVD advancements for improved power device performance
Somit Joshi
Sr. Director of Marketing in Veeco
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11:40-13:00
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Break
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Session2 : High-Voltage Power Semiconductor Technology
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Session2 : High-Voltage Power Semiconductor Technology Moderator:
Brian Lin,
Assistant to General Manager, San’an Optoelectronic Co., LTD
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13:00-13:25
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Frontier of high power IGBT technology: high temperature, high power density and easy expandability
Kwok Wai Ma
Director, Industrial power Control of Infineon Technologies Hong Kong Limited
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13:25-13:50
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Power Semiconductor Technology Advances China High-Speed Rail Development
Gary Liu
Vice General Manager of Zhuzhou CSR Times Electric Co.,Ltd.
A member of SEMI China Power & Compound Semiconductor Committee
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13:50-14:15
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Development and Trend of power semiconductors for high power and low losses applications
Makan chen
Senior Technical Sales Manager of ABB Switzerland Ltd -Semiconductors
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14:15-14:40
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Silicon Carbide (SiC)Power Modules for Energy Saving Applications
Michael Zhuang
General Manager of Nanjing SilverMicro Electronics, Ltd.
A member of SEMI China Power & Compound Semiconductor Committee
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14:40-15:05
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Power Green Revolution-Power Discrete Technologies
Jiye Yang
Director of Shanghai HHGrace
A member company of SEMI China Power & Compound Semiconductor Committee
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15:05-15:20
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Break
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Session 3: Front-end Materials and Process
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Session 3: Front-end Materials and Process Moderator:
Sun Qian,
Winner of First Prize of the National Technological Invention Award of China 2015,VP of Lattice Power
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15:20-15:45
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Rrogress on Silicon Carbide(SiC) Epitaxial Technology for Power Semiconductors
Gan Feng
Vice President for R&D of Epiworld
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15:45-16:10
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Further advances in GaN and SiC epitaxial production technologies for efficient power semiconductor devices
Dr. Frank Wischmeyer
Vice President Power Electronics, AIXTRON SE
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16:10-16:35
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Reliability and yield limiting variances in power-electronic manufacturing-early detection by advanced in-situ monitoring
Thieme Tom
Director Marketing & Sales of LayTec AG
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16:35-17:15
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Closing Keynote
Toyota's challenge of applying SiC power semiconductors to environmentally friendly vehicles
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17:15-17:20
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Lucky Draw
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*Agenda is subject to change
Type
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Before Feb.20 with Advanced Payment(Early Bird)
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After Feb.20 and On-site
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Attendees
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RMB 800 per person
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RMB 1,000 per person
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Speakers
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Free
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Free
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* Lunch is not included
Daniel Qi SEMI China
Tel: 86-21-60278576
Fax: 86-21-60278511
Email: fqi@semi.org