Symposium Chair: Dr. Ying Zhang
** | to designate keynote talk - 30 min | |||
* | to designate invite talk - 25 min | |||
to designate regular talk - 15 min |
Monday, March 24, 2025 Shanghai International Convention Center
Session I: Lithograpy/Etch joint session (II & III)
Meeting Room:
Session Chair:
13:30-13:35 | Opening Remarks |
Leo Pang / Zhongwei Jiang | |
**13:35-14:05 | TBD |
**14:05-14:35 | Challenges and latest developments on photo resisters for advanced logic and memory technology nodes |
Allen Chang, JSR Taiwan, China |
|
**14:35-15:05 | The integration and process challenges and solutions for advanced technology nodes |
David Xiao, Qianmo Microelectronics | |
15:05-15:20 | Coffee Break |
Session II: Advanced Patterning
Meeting Room:
Session Chair:
*15:20-15:45 | Patterning challenges and perspectives solutions in advanced DRAM technology nodes |
Hongbo Sun, Beijing Chaoxian Memory Research Institute | |
*15:45-16:10 | The pattern solutions for GAAFET |
Min Xu, Fudan University | |
16:10-16:25 | A STUDY OF MININUM ISO-DENSE ETCHING CD BIAS LOADING PERFORMANCE ON ADVANCED LOGIC TRENCH PROCESS |
Chia Lin Lu, Applied Materials | |
16:25-16:40 | Analysis of Crucial Factors Influencing on Selectivity of SiGe/Si Stack Etching |
Anton Kobelev, Suzhou STR Software Technology Co., Ltd | |
16:40-16:55 | Atomistic simulation of dry etching process: Interactions between high-energy particles and solid surface |
Yang Wang, Southwest Jiaotong University | |
16:55-17:10 | The influence of Mandrel materials on graphic transmission in patterning process |
Jun Luo, Beijing NAURA Technology Group Co., Ltd. | |
Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room:
Session III: FEOL/MOL Etching
Session Chair:
08:45-09:00 | Vertical and Horizontal Profile Control in STI Etch |
Fansheng Wang, Applied Materials China | |
*09:00-09:25 | Effects of ALE Capabilities and DC Pulsing in Microwave ECR Plasma on Etching Processes for Cutting-Edge Logic LSI |
Masaru Izawa, Hitachi High-Tech Corporation | |
09:25-09:40 | Ultra-high steep Ion Beam Etching by Employing Highly Dynamic Holder |
Baosheng Du, Suzhou Youlun Vacuum Equipment Technology Co., Ltd. | |
*09:40-10:05 | Pulsing Plasma Application for Advanced Dry Etch Process |
Zhongwei Jiang, Beijing NAURA Technology Group Co., Ltd. | |
10:05-10:20 | Coffee Break |
Session IV: Memory Applications
Session Chair:
*10:20-10:45 | Latest new results and developments of TSV for advanced 3DIC applications |
Lv Chao, Beijing NAURA Technology Group Co., Ltd. | |
10:45-11:00 | Study on SiC Trench Etching with High Aspect Ratio |
Shiling Wang, Shanghai BangXin Semi Technology Co., Ltd. | |
11:00-11:15 | Modeling the Charging Effect on the Twisting Defects during High Aspect Ratio Etching of Dielectrics |
Yuxuan Zhai, Institute of Microelectronics, Chinese Academy of Sciences | |
11:15-11:30 | DTI Depth Uniformity Tuning by Ra and Gas Distribution |
Lei Sun, Applied Materials China | |
11:30-11:45 | Cleaning and Assessing Particles from Polymer Materials used in Semiconductor Manufacturing Tool |
Ling Wang, Ferrotec Technology Development (Shanghai) Co. Ltd | |
11:45-12:00 | Study on the optimization of via contact resistance (Rc) by the collocation of gas parameters in AIO etching |
Gui Cong, Nexchip Semiconductor Corporation | |
12:00-13:30 | Lunch Break |
Session V: BEOL Etching
Session Chair:
*13:30-13:55 | Mechanism and Effect of 4-Level RF Pulsing on Etching Process in Advanced Nodes |
Yang Ding, Advanced Micro-Fabrication Equipment Company Inc. | |
13:55-14:10 | Through-pitch CD Control with TIN Metal Hardmask Etch Process for Logic BEOL Patterning |
Litian Xu, Beijing NAURA Technology Group Co., Ltd. | |
14:10-14:25 | Process Window Optimization for Gate Etch Process of 2D NAND |
LiFei Sun, Lam Research | |
14:25-14:40 | Coffee Break |
Session VI: Wet Etch and other etching
Session Chair:
*14:40-15:05 | Ion Beam Etching as a Patterning Solution for Memory Applications |
Yuxing Yang, Jiangsu Leuven Instruments Co., Ltd. | |
15:05-15:20 | Study on Wet Alkaline Chemicals Etching of Hole Dummy Polysilicon in 3D Multi-Layer Structure |
Jiao Jin, Beijing Superstring Academy of Memory Technology | |
15:20-15:35 | Novel IPA filtration technology for Advanced Wet Clean |
Jun Lu, Hangzhou Cobetter Filtration Equipment Co., Ltd | |
15:35-15:50 | Investigating the Etch Performance of Zirconium-Based Photoresist for Direct Silicon Oxide Etching |
Ahmad Hassan Siddique, Tsinghua University | |
15:50-16:05 | SiO2 etch rate drift investigation and mitigation in an ICP Al etch chamber |
Chenming Xu, Jiangsu Leuven Instruments Co., Ltd. | |
16:05-16:20 | Numerical Modelling on FFU Arrangements Optimization within Cleanroom during Preventive Maintenance |
Chengxi Yao, Sungkyunkwan University | |
16:20-16:35 | Etching surface and dimension control for IGZO TFT in 3D memory device |
Zehua Hei, Beijing Superstring Academy of Memory Technology | |
16:35-16:50 | SiC Etch with Inductively Coupled Plasma for Power Device Applications |
Haiyang Lv, Advanced Micro-Fabrication Equipment Company Inc. | |
16:50-17:05 | The PMOS Silicon Recess Process Control With Evolution of Trench Morphology |
Fan Yu, Beijing NAURA Technology Group Co., Ltd. |
Poster Session: | |
A study of wet cleaning methods for tungsten high aspect ratio dry etch | |
Chaoyang Guan, Beijing Superstring Academy of Memory Technology | |
Metallic Contamination Control Challenges and VPD System Innovations for Hydrophilic Wafer Substrates | |
Qiao Huang, Jiangsu Leuven Instruments Co., Ltd. | |
ALE like Post-etch SiC Surface Treatment | |
Chunxiang Guo, Jiangsu Leuven Instruments Co., Ltd. | |
A Study of Wafer Arcing Issue in Dielectric Via Etching | |
Taojun Zhang, Jiangsu Leuven Instruments Co., Ltd. | |
Defect engineering in 2D materials via ion beam irradiation | |
Yuxin Yang, Advanced Micro-Fabrication Equipment Company Inc. | |
Process Engineering for Depth and N/P Loading Control in Polysilicon Gate Etching | |
Chun Gao, Lam Research | |
Time-Multiplexed Alternating Plasma Etching of Piezoelectric Materials | |
Yuanwei Lin, Beijing NAURA Technology Group Co., Ltd. | |
Unexpected Enhancement of Aluminum Etching Rate by Increased Nitrogen Concentration in Semiconductor Manufacturing | |
Quanzhi Long, Zhejiang University | |
The influence of post etch N2 treatment on TM Al line corrosion | |
FanShun Meng, CanSemi Technology Inc. | |
Study of the Influence of Surface Cleaning Process on SiGe Epitaxy Particle Defects | |
Xuan Liu, Semiconductor Manufacturing North China | |
The Influence Of Backside Metal Contamination Before Epitaxy On A Kind Of Cluster Cone Defect In Shallow Trench Isolation | |
Zhanduo Bai, Semiconductor manufacturing International (Beijing) Corporation | |
Improved clean approach of post dual-damascene AIO etch for low-K damage reduction | |
Yuying Liu, Lam Research | |
Characterization Studies of the sidewall polymer after TIN Etching on Microchip Al Bondpads Using Capacitance Coupled Plasma (CCP) etcher | |
Xin Su, Nanchang Zhongwei Semiconductor Equipment Co., Ltd | |
Exploration of Boundary Conditions for Capacitor Etching Methods Under the Background of Characteristic Process | |
Zhi Yao, Huahong Semiconductor (Wuxi) Co., Ltd. | |
The etching of SiO2/Mo-MoN/SiO2/TiN stacks in an inductively coupled plasma system | |
Jiahui Sun, Beijing Superstring Academy of Memory Technology | |
Undercut Profile Control of STI ETCH | |
Jianhang Chen, Nexchip Semiconductor Corportion | |
Comparison of 40MHz and 60MHz HF Frequencies in Dual-Frequency CCP for Low-k AIO Process | |
Weiming Liu, Advanced Micro-Fabrication Equipment Inc. | |
Etching Process Optimization of Deep Silicon Trench Sidewall Damage with High Aspect Ratio | |
Yuxin Wang, Huahong Semiconductor (Wuxi) Co., Ltd. | |
A Dry Etch Defect Type Comb Particle Exploration and Solution | |
Yang Wei, Nexchip Semiconductor Corporation | |
The Influence of Surface Cleaning Process on Particle Defects of Selective SiGe Epitaxy | |
Xuan Liu, Semiconductor Manufacturing North China | |
A Test Method to Evaluate Destructive Removal Efficiency (DRE) Used in Semiconductor Industry | |
Yanling Xiong, EDWARDS | |
Study on Tungsten (W) Filling Void Improvement with Chamfered Gate Profiles | |
Pengfei Lyu, Lam Research | |
Study on the mechanism and improvement of top notch profile in deep trench etching | |
Yayu Hong, Lam Research | |
BEOL Backside Clean Undercut Optimization by ZUC Chuck | |
Haibo Liu, Lam Research | |
Establishment of active area etching using Lam RAP process in CIS application | |
Xi Chen, Lam Research | |
Simulation-Driven Optimization of STI Etching: A Systematic Approach to Defect Reduction | |
Jianming Guo, Zhejiang University | |
Galvanic Corrosion Study in Selective TiN Etch Chemistries | |
Chien-Pin Sherman HSU, Avantor | |
Evaluation and Improvements of TSV Distortion Characteristics in High Aspect Ratio TSV Etch | |
Changhuo Liu, Peking University | |
Fluorine Memory Effect Elimination in Cu BEoL Top Via Etching | |
Sichao Zeng, Applied Materials China | |
High-k Metal Gate Etch on Sym3Y HT Chamber | |
Jie Wang, Applied Materials China | |
Sym3™ Lid Temperature Control System for Uniformity Improvement | |
Tianyuan Liu, Applied Materials China | |
Profile Control of 28nm HKMG Poly Etch | |
Xipeng Tong, Applied Materials China | |
Process challenges of HT Photomask Tuning on Tetra | |
Long Men, Applied Materials China | |
Taper Profile Control for MOSFET Gate Contact Etch on SuperE | |
Wang Miao, Applied Materials China | |
Profile control of CIS BMG tungsten etching | |
Le Jiang, Applied Materials China | |
Deep Si Etch Process Optimization with AppliedPRO | |
Fan Zhou, Applied Materials China | |
Digital tool AppliedPRO™ For Etch Process Development | |
Kai Hu, Applied Materials China | |
A Solution to HVCAP VIA Etch Polymer Residue | |
Qunfeng Wen, Applied Materials China | |
Profile Tuning on VTG Etch Development | |
Zhang Weiqiang, Applied Materials China | |
Edge Yield Improvement for DRAM Capacitor Middle MESH Layer Punch Process with Sym3Y | |
Chunlong Qiu, Applied Materials China | |
Hydrogen Bromide Usage in Polysilicon Etching Process | |
Songtao Lv, Applied Materials China | |
Roughness Improvement of DTI Process by Argon Introduction | |
Difan Li, Applied Materials China | |
CoSi2 Loss Study of Contact Etch on ProducerTM | |
Bao Jing, Applied Materials China | |
Digital Tool Applied Crossmatch™ for Chamber matching | |
Jianjun Liao, Applied Materials China | |
In-Situ Strip to Improve Defects for Al etch | |
Kairong Cui, Applied Materials China | |
High Open Ratio Al Pad Etch Challenge and Solution | |
Fan Chen, Applied Materials China | |
SRAM VIA Chain Height Control in Dual Damascene Etch Process | |
Ping Zheng, Applied Materials China | |
ISO Dense CD loading in STI Etch | |
Jimmy Fu, Applied Materials China | |
DTC Etch in Packaging Device | |
Lijun Shan, Applied Materials China | |
Profile Control in PDL Etch | |
Tongyao Zhao, Applied Materials China | |
MTBC improvement for Producer™ GT Passivation etch | |
Jing Cao, Applied Materials China | |
Dual Damascus Pattern Depth Loading Challenges and Solutions | |
Shuda Xu, Applied Materials China | |
Improvement of TiN Hardmask Profile by N2 Gas | |
Ziyue Xuan, Applied Materials China | |
Ultra-low Bias Power CIS Deep Trench Isolation Etching | |
Hanlin Cui, Applied Materials China | |
Optimize Deep Trench Isolation Si etching with SF6 O2 Containing Plasma | |
Longjie Yu, Applied Materials China | |
Novel Approach to Address TiN HMO Top View Challenges | |
Caili Lang, Applied Materials China | |
O2 plasma descum on residue removal | |
Jiajie Li, Applied Materials China | |
Abstract_Etch Profile Tuning Study on Small-sized Poly Gate | |
Wenyi Tang, Applied Materials China | |
Heated SFV Positive Function for Y Pattern Particle Improvement in Etch Tool | |
Mengyu Xie, Applied Materials China | |
Profile Optimization In Poly Gate Etch | |
Lin Luo, Applied Materials China | |
Residue reduction in TIN HM ETCH | |
Dongjiang Wang, Applied Materials China | |
Approaches to remove Ti-residue in TiN HMO process | |
Rishuai Zheng, Applied Materials China | |
Advanced RF Pulsing in DRAM Bitline Etch Profile Control | |
Zheng Ruan, Lam Research | |
Application of Pulsing Plasma on DRAM Buried Wordline Microloading Control | |
Kevin Yao, Lam Research | |
Mandrel Etch Tuning for Imbalance Improvement in Reverse SADP | |
Shipeng Gong, Lam Research | |
Dry Etch Methods to Simplify Power Devices Top Corner Rounding and Poly Etch Back Process | |
Stan Zhang, Lam Research | |
Study on CD slot effect in TiN hard mask open etch process | |
Haoran Wang, Lam Research | |
Etch Profile Control of Alternate Oxide Tungsten stack | |
Rui Hu, Applied Materials China | |
Tungsten plug etchback process in IGBT manufacturing | |
Haoran Song, Beijing NAURA Technology Group Co., Ltd. | |
Poly-Si cut process for storage node contact manufacturing in DRAM memory | |
Mengjiao Zhu, Beijing NAURA Technology Group Co., Ltd. | |
Investigation of silicon oxide thin film utilizing plasma enhanced atomic layer deposition in ICP etcher | |
Li Zeng, Beijing NAURA Technology Group Co., Ltd. | |
The process of etching high aspect ratio SiB at high temperature | |
Xuehua Wang, Beijing NAURA Technology Group Co., Ltd. | |
Micro loading issue improvement in poly gate etch | |
Yiman Ma, Beijing NAURA Technology Group Co., Ltd. | |
Isolation SiN etch strategy for OLED pixel definition layer manufacturing | |
Bin Wang, Beijing NAURA Technology Group Co., Ltd. | |
LWR improvement in self-aligned patterning process involved in 193nm photoresist treatment | |
Guangzhao Yuan, Beijing NAURA Technology Group Co., Ltd. | |
the influence of strip step on punch process | |
Yu Hao, Beijing NAURA Technology Group Co., Ltd. | |
Carbon hardmask etching profile control using cyclic deposition and etching | |
Wencong Wei, Beijing NAURA Technology Group Co., Ltd. | |
Bridge Defect Issue Solution in Trilayer HM Etch | |
Zhe Wang, Beijing NAURA Technology Group Co., Ltd. | |
Depth uniformity of silicon and dielectric trenches etching for the burried wordline of novel memory | |
Teng Zhang, Beijing NAURA Technology Group Co., Ltd. | |
IGZO film etching technique using BCl3 plasma following diluted hydrofluorine solution | |
Run Zhang, Beijing NAURA Technology Group Co., Ltd. | |
Array center and corner loading improvement in r-SADP | |
Shun Yang, Beijing NAURA Technology Group Co., Ltd. | |
Si top corner damage-free etch process for shallow trench isolation of beyond the 22nm node | |
Yingjie Wang, Beijing NAURA Technology Group Co., Ltd. | |
Deep Silicon Etching Process for Optimizing Sidewall Morphology | |
Yiming Ma, Beijing NAURA Technology Group Co., Ltd. | |
The optimization of depth micro-loading in shallow trench isolation etching for dual-channel structure | |
Junsheng Ma, Beijing NAURA Technology Group Co., Ltd. | |
Through-Silicon via etch by SF6/O2 chemistry with ICP etcher | |
Dong Li, Beijing NAURA Technology Group Co., Ltd. | |
Optimization of the profile loading in dummy Poly Gate etch | |
Ruiping Zhu, Beijing NAURA Technology Group Co., Ltd. | |
Chamber Conditions Control with Waferless Auto Clean Strategy in BEOL Aluminum Metal Etching Process | |
Guohui Jia, Beijing NAURA Technology Group Co., Ltd. | |
Study of Poly-Si etch rate sensititivity with Pulsing Mode of RF Powers for Soft-landing Step in Gate Patterning Process | |
Chao Xu, Beijing NAURA Technology Group Co., Ltd. | |
Self-Limited Behavior Study on Dielectric Quasi-Atomic Layer Etching for Selectivity Achievement | |
Xiaoxia Meng, Advanced Micro-Fabrication Equipment Company Inc. | |
The Investigation on Partial Via Etch Of Low-K In MHM AIO Process | |
Ruolan Ma, Advanced Micro-Fabrication Equipment Company Inc. | |
Mechanism and Model of Line Wiggling/Asymmetric Trench profile and Effective Solutions | |
Mimi Dai, Advanced Micro-Fabrication Equipment Company Inc. | |
An Approach to Improve Distortion With High-Aspect-Ratio Cryogenic Etching Using Boron-Containing Gases | |
Yue Wei, Advanced Micro-Fabrication Equipment Company Inc. | |
The Effects of Power and Chemistry on High-aspect-ratio Contact Profile | |
Jianqiu Hou, Advanced Micro-Fabrication Equipment Company Inc. |