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March 14-16,2018
Shanghai New International Expo Centre

Symposium VI: Metrology, Reliability and Testing


(** to designate keynote talk, * to designate invite talk)

Sunday, March 12, 2017 Shanghai International Convention Center
Meeting Room: 5D+5E

Session I: Test
Session Chair: Frank Feng


13:30–13:35 Chairman Remarks
  Peilin Song / Baozhen Li
**13:35–14:05 Variation and Failure Characterization Through Test Data Analytics
  Prof. Tim Cheng, Hong Kong University of Science and Technology
14:05–14:20 System Qualification Platform for FPGA Board Level Testing And Automated Regression
  Yibin Sun, Lattice Semiconductor
14:20–14:35 Two indirect methodologies for testing FPGA intrinsic programmable logic cell timing performance
  Hongpeng Han, Lattice Semiconductor
14:35–14:50 A statistically robust methodology for optimized sample size determination for FPGA post-silicon validation
  Weijun Qin, Lattice Semiconductor
14:50–15:35 Coffee Break
 


Session II: Test
Session Chair: Kelvin Xia


*15:35–16:00 New Approach For Full Chip Electrical Reliability Verification
  Dr. Frank Feng, Mentor Graphics, USA
16:00–16:15 Using VerilogA for Modeling of Single Event Current Pulse: Implementation and Application
  Jia Liu, Science and Technology on Analog Integrated Circuit Laboratory
16:15–16:30

Finger Print Sensor Molding Thickness None Destructive Measurement  with Terahertz

Longhai Liu, Advantest Corporation, China

16:30–16:45 High Efficiency Test System for Envelope Tracking Power Amplifier
  Feifan Du, National Instruments Corp
   
Poster Session: Location: Foyer of Yangtze River Hall
Coffee Break The research of intelligent feedback mechanism between document control and production system
  Zhou Zhenlin, Semiconductor Manufacturing International (Tianjin) Corp.
  Systematic maintenance and application of Failure Modes and Effects Analysis (FMEA) in Semiconductor Manufacturing
  LIU ZI QIAN/Hongtao HT Qian, Semiconductor Manufacturing International Corporation
  A STUDY ON PROBLEM SOLVING STRATEGY USING EXPERIMENT OF DESIGN
  Xinyuan Ji, Semiconductor Manufacturing Inernational Corporation
  Improvement on the Stress Migration in Tungsten-Plug Via
  Wen Juan, Semiconductor manufacturing International Corporation
  High-K Metal Gate Inline Measurement Technique Using XPS
  Yang Song, SMIC
  A new method for evaluation of SPC chart
  Jialei Feng, SMIC
  Method Study in Measuring Effective Work Function of HKMG MOSFET
  XIAOFENG WANG, Semiconductor Manufacturing International (Shanghai) Corporation
  The evolution of mask registration metrology towards most advanced nodes
  LIN PEI-YING, Carl Zeiss Co. Ltd
  Application Study of Qmerit Function on Overlay Accuracy Verification
  HU HUAYONG, SMIC
  In-situ Monitoring System Equipped with FT-IR and QMS and Decomposition
  Jong-Ki An, bVacuum Center, Korea Research Institute of Standards and Science (KRISS)
  Chemical transformations of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) under extreme storage conditions
  Seob Shim, Korea Research Institute of Standards and Science
  Optimization for the measurement parameters of CDSEM for several specific situation
  Hanmo Gong, SMIC
 

Monday, March 13, 2017 Shanghai International Convention Center
Meeting Room: 5D+5E

Session III: Metrology
Session Chair: John Li


*8:30–8:55 On the use of conductive atomic force microscopy to monitor resistive switching
  Prof. Mario Lanza, Soochow University
8:55–9:10 Effective Method to Automatically Measure the Profile Parameters of Integrated Circuit from SEM/TEM Images
  Xiaolin ZHANG, Raintree Scientific Instruments (Shanghai) Corporation
9:10–9:25 Spectrometric Ellipsometry Application to Optical Metrology Solution of Lithography Process Control
  Zhenyu Wu, KLA-Tencor China
9:25–9:40 Aerial Imaging Metrology (AIMS?) and its applications in mask manufacturing
  Robert Birkner, Carl Zeiss SMT GmbH
9:40–9:55 Measurement of nanoscale grating structure by Mueller matrix ellipsometry
  Shiqiu Cheng, Raintree Scientific Instruments (Shanghai) Corporation
9:55–10:10 Coffee Break
   

Session IV: Metrology and Measurement
Session Chair: Ernest Wu


*10:10–10:35 Physical Failure Analysis of Semiconductor Devices by Electron Probing and Transmission Electron Microscopy
  Dr. John Li, Globalfoundries, USA
10:35–10:50 The study and investigation of inline e-beam inspection for 28nm process development
  Yin Long, Shanghai Huali Microelectronics Corporation
10:50–11:05 Stress Control Metrology in Epitaxy
  Yang Song, SMIC
11:05–11:20 Low Frequency Noise Characterization of 22 nm PMOS Featuring with Filling W Gate Using Different Precursors
  He Liang, IMEC
11:20–11:35 Exploration of Poly Irms Based on 40nm Technology Node
  Xiangfu Zhao, Semiconductor Manufacturing International Corporation
11:35–11:50 Effect of High Temperature Storage on Fan-out Wafer Level Package Strength
  Cheng Xu, Nanyang Technological University
11:50–13:20 Lunch Break
   

Session V: Reliability - I
Session Chair: Jian Fu Zhang


*13:20–13:45 System Level Electromigration Reliability
  Dr. Baozhen Li, IBM Systems Group
13:45–14:00 Effects of Copper Line-edge Roughness on TDDB at 28nm and Advanced Technology Node
  Dongyan Tao, SMIC
14:00–14:15 Highly Effective Low-K Dielectric Test Structures and Reliability Assessment for 28nm and Below Technology Node
  Zhijuan Wang, SMIC
14:15–14:30 Study of Safe Operating Area and Improvement for Power Management IC
  Sarah Zhou, SMIC
14:30–14:45 Static Voltage Propagation Approach To Assist Full Chip LUP And TDDB Physical Verification
  Yi-Ting Lee, Mentor Graphics
14:45–15:00 Coffee Break
   

Session VI: Reliability - II
Session chair: Baozhen Li


*15:00-15:25 Time-dependent Clustering Model for Dielectric Breakdown with Variability
  Dr. Ernest Wu, IBM Research, USA
15:25-15:40 Deep Level Investigation of InGaAs on InP Layer
  Chong Wang, IMEC
15:40-15:55 Practical Wafer Level Threshold Voltage Stability Methodology for Fast Evaluation Flash Technology
  Gang Niu, SMIC
15:55-16:10 GDI Failure Mechanism Investigation and Improvement in HK Process
  Lingxiao Cheng, SMIC
16:10-16:25 Fail Mechanism of Program Disturbance for Erase Cell VT Positive Shift in NAND Flash Technology
  Chunmei Zou, SMIC