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March 20-22, 2019
Shanghai New International Expo Centre

Symposium VI: Metrology, Reliability and Testing


(** to designate keynote talk, * to designate invite talk)

Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room: 5D+5E

Session I: Test I
Session Chair: Xiaowei Li


13:30–13:35 Chairman Remarks
  Peilin Song / Baozhen Li
**13:35–14:05 Challenges and Solutions in Today’s Safety Critical SOCs
  Dr. Yervant Zorian, Synopsys, USA
14:05–14:20 A Method for Test while Dealing with Jitter Transfer on ATE
  Kenichi Nagatani, Advantest (China) Co., Ltd.
14:20–14:35 The Monitoring Evolutionary Algorithm in Device Production Testing
  Kun Xu, Advantest (China) Co., Ltd.
14:35–14:50 Achieving Mastery in Chip Manufacturing
  Cyril-Patrick Fernandez, Advanced Fab Technology
14:50–15:35 Coffee Break


Session II: Test II
Session Chair: Kelvin Xia


15:35–15:50 Application of an enhanced failure bitmap method for memory fault isolating
  Zhimin Zeng, HHGrace

15:50–16:05

Cars and MEMS: Advanced Probe Technology Enabling Automotive IC Wafer Test

Amy Leong, FormFactor Inc, USA
16:05–16:20

Low-frequency noise assessment of 1.8 V input-output bulk FinFETs with ALD SiO2


Eddy Simoen, IMEC


16:20–16:35 Key Trends Driving the Need for More Semiconductor System-Level Test

Anil Bhalla, Astronics Test Systems, USA
16:35–16:50 Advanced Tool Matching Methodology in Semiconductor Manufacturing

Liu Ziqian, SMIC


Poster Session: Location: 5th Floor
Coffee Break Research on Ultra-Low RDSON Wafer Measurement
  Lei Wang, HHGrace
  A Method of Contact Level PVC Enhancement
  Xiaojun Xu, HHGrace
  Study on optimization method of flash cell analog measurement
  Wu Yuan, HHGrace
  Thickness and Concentration Control for Silicon-Germanium (SiGe) Films
  Liying Wu, SMIC
  Inline Thickness Control for High-k Metal Gate Films Using Ellipsometer and XPS
  Liying Wu, SMIC
  CD SEM condition setting optimization for CD measurement accuracy improvement
  Hanmo Gong, SMIC
  ULK Optimization for Cu/ULK(K=2.5) BEOL Interconnect TDDB and EM Improvement at 28/14nm Technology Node and Beyond
  Zou Xiaodong, SMIC

Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 5D+5E

Session III: Metrology
Session Chair: Frank Feng


*8:30–8:55 Applications of Advanced Techniques of Transmission Electron Microscope in Characterizations of Semiconductor Devices
  Dr. John Li, GLOBALFOUNDRIES, USA
8:55–9:10 The Detection and Investigation of Poly Line Leakage by Electron-Beam Inspection
  Rongwei Fan, Huali
9:10–9:25 Legacy Profiler Capacity/Utilization Improvement with Automation for High Volume BAW Production
  Yanghua He, Qorvo.Inc, USA
9:25–9:40 Monitoring Critical Process Steps in 3D NAND and Advanced RF using Picosecond Ultrasonic Metrology
  Priya Mukundhan, Rudolph technologies, USA
9:40–9:55 Accelerating the time to market for advanced memory and logic devices with automated (S)TEM based metrology
  Dr. Justin Roller, Thermo Fisher Scientific, Hillsboro, USA
9:55–10:30 Coffee Break
   

Session IV: Metrology and Defect Localization
Session Chair: John Li


*10:30–10:55 Machine Learning Enabled in situ Etch Endpoint Control
  Ye Feng, Director, Lam Research
10:55–11:10 Effective Electrical Reliability Verification for Advanced Nodes
  Frank Feng, Mentor, A Siemens Business, USA
11:10–11:25 The total inspection solutions of extreme tiny defect in BEOL advanced semiconductor process
  Xingdi Zhang, Huali
11:25–11:40 The Detection and Investigation of Tungsten-plug Voids by Electron-Beam Inspection
  Rongwei Fan, Huali
11:40–11:55 Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale
  Xing Wu, East China Normal University
11:50–13:30 Lunch Break
   

Session V: Reliability - I
Session Chair: Jian Fu Zhang


*13:30–13:55 Reliability Engineering: Help Enable Technology Scaling
  Dr. Sangwoo Pae, Samsung
13:55–14:10 Changeable Electromigration Failure Mode in Wide Cu Interconnects
  Hui Zheng, Huali
14:10–14:25 Impact of TID Radiation on Hot-Carrier Effects in 65nm bulk Si NMOSFETs
  Zhexuan Ren, Peking University
14:25–14:40 Reliability Comparison between Al Process and Cu Process based on 0.11um Technology Node
  Zhao Xiang Fu, SMIC
14:40–15:30 Coffee Break
   

Session VI: Reliability - II
Session Chair: Ye Feng


*15:30-15:55 Assessing the accuracy of statistical properties extracted from a limited number of device under test for time dependent variations
  Prof. J. F. Zhang, Liverpool John Moores University
15:55-16:10 Advanced n-Channel LDMOS with Ultralow Specific ON-Resistance by 0.18 μm Epitaxial BCD Technology
  Yao Yao, Fudan University
16:10-16:25 Reliability Study of Novel Gate Oxide Process Control Method
  Guangpeng Zeng, Nankai University