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June 27-29, 2020
Shanghai New International Expo Centre

Symposium VI: Metrology, Reliability and Testing


** to designate keynote talk - 30 min
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Parallel Symposium Oral Sessions: June 29-July 17, 2020

Session I: Test I
* Is Hardware the Next Dimension in Cybersecurity?

Ramesh Karri, New York University, USA

Multi-granularity Reconfiguration Based Physical Unclonable Function Design

Jianan Mu, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, China

Low-Cost Solution for Ultra-Highspeed SerDes to RF Communication Test via on Board FPGA

Tang Mingjie, Advantest (China) Co., Ltd.

A ProgrammingFframework of Concurrent Test on SMT7 for IPs which Share Same Access Port

Tianyu Zhang, Advantest (China) Co., Ltd.
Session II: Test II
* Yield Learning in 5nm Semiconductor Technologies: Test Chip Design

Prof. Shawn Blanton, Carnegie Mellon University, USA

Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

Shang-Chih Lin, Gallant Precision Machining(GPM), Taiwan, China

Unifying Yield Enhancement and Manufacturing Intelligence with Smart Sampling

Zhang Yan Qiu, Fujian Jinhua Integrated Circuit Co., Ltd.

An Adaptive De-noise System for Sub-nm Scale Failure Analysis Based on TEM Image

Xu Chang, Fujian Jinhua Integrated Circuit Co., Ltd.
Session III: Metrology I
** Machine and Deep Learning for Metrology of Process Control

Dr. Shay Wolfling, Nova Measuring Instrument, USA

Wave Front Phase Imaging For Global Silicon Wafer Geometry

Jan Gaudestad, Wooptix, Spain

Optical Scatterometry Modeling of 5 nm Logic Metal Gate Structures

Qi Wang, Shanghai IC R&D Center
Session IV: Metrology II
* E-Beam Inspection Challenge for New Technology Node and New Opportunity

Dr. Wei Fang, ASML, USA

Full Metrology Solutions for Advanced RF by Picosecond Ultrasonic Metrology

Johnny Dai, Onto Innovation, USA

Monitoring Critical Process Steps in 3D NAND using Picosecond Ultrasonic Metrology with both Thickness and Sound Velocity Capability

Hui LI, Yangtze Memory Technologies Co.

Quality Control in Sapphire Growing: From Automated Defect Detection to Big Data Approach

Ivan Orlov, Scientific Visual SA, Switzerland
Session V: Reliability I
* Towards Understanding Interaction Between Hot Carrier Aging and PBTI

Prof. Jian Fu Zhang, Liverpool John Moores University, UK

Comprehensive Comparison of the Wire Bond Reliability Performance of Cu, PdCu and Ag Wires

Lois Liao Jinzhi, WinTech Nano-Technology Services Pte. Ltd, Singapore

Practical Carrier Lifetime Analysis in In.53Ga.47As Hetero-epitaxial Layers

Eddy Simoen, IMEC, Belgium

A Study of Low Temperature Al Sputter Process Electromigration Lifetime

Jun Liu, Shanghai Huahong Grace Semiconductor Manufacturing Corporation
Session VI: Reliability II
* Transition Induced Internal CDM-ESD liked Damage inside the IC

Dr. Tung-Yang Chen, AIP Technology Corporation, Taiwan, China

Reliability Improvement by 0.153um CMOS Using HDP-CVD at STI Edge SiN Liner

WeiYang Zhang, Technology Development, Central Semiconductor Manufacturing Corporation (CSMC)

Non Linear Growth of Variance in the Process Gap

George W Horn, Middlesex Industries SA, Switzerland

Research on WBP Product Stress to Improve Product Vr Yield

Yang Chen, ZTE

A Novel Vertical Closed-loop Control Method for High-generation TFT Lithography Machine

Dan Chen, Shanghai Micro Electronics Equipment (Group) CO., LTD.

Conference Poster Session: June 26-July 17, 2020

  Probe Card Lifetime Control and Abrasion Coefficient Study
  Lei Wang, HHGrace
  Metal Trench Critical Dimension and Overlay Minor Variation Monitoring Method with Voltage Contrast Inspection
  Lijing Huang, HLMC
  The Inspection Solutions and Reduction of Extreme Tiny Poly Residue
  Jianye Song, HLMC
  An Application of Adaptive Genetic Algorithm Combining Monte Carlo Method
  Wei Yu, HLMC
  Investigation and reduction of Systematic defects by wafer backside process in nanometer semiconductor manufacturing
  Jiangang Zhou, HLMC
  Study of high-precision interferometer dynamic switching for TFT long-travel-range moving stage
  Dan Chen, Shanghai Micro Electronics Equipment (Group) CO., LTD.
  Fault Detection of sensor data in semiconductor processing with variational autoencoder neural network
  Wang Yong, Shanghai Huali Microelectronics Corporation
  New Precision Jitter Measurement Solution on TMU
  Kai Zhou, Advantest
  Investigation and discovery of the integration of FEOL process by electron beam inspections
  Fengjia Pan, Shanghai Huali Microelectronics Corporation
  One Comprehensive Method to Analyze Semiconductor Manufacturing Data by "Piecewise" Regression
  Lin Gu, Shanghai Huali Microelectronics Corporation
  The inspection solutions of 3bar structure Cu void in BEOL advanced semiconductor process
  Zhangxingdi, Shanghai Huali Microelectronics Corporation
  The inspection and solution of inline CT defect for 28nm process improvement
  Min Wang, Shanghai Huali Microelectronics Corporation
  The Study and Investigation of Inline E-beam Inspection for 28nm Process Window Monitor
  Yin Long, Shanghai Huali Integrated Circuit Corporation
  A Unified 4H-SiC MOSFETs TDDB Lifetime Model Based on Leakage Current Mechanism
  Hua Chen, Xidian University
  Study on wafer edge test with optimized test solution
  Yuxiang Zhang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation