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+86.21.6027.8500
English
March 14-16,2018
Shanghai New International Expo Centre

Yang Liu

Yang Liu
Vice president, SINOPOWER SEMICONDUCTOR CO.,LTD.

Biography

Yang LIU received the M.S. and Ph.D. degree in microelectronics and solid state electronics from Jilin University, Jilin, China, in 1994 and 2000, respectively. Then he had worked on GaN power electronic materials and devices in Nagoya Institute of Technology, Japan, which is globally famous for their cutting edge GaN-on-Si technique. Dr. LIU joined Sun Yat-sen University being a professor in 2007, where he co-founded the largest research platform for III-Nitride semiconductor materials and devices in southern area of China. In May 2016, he co-founded Sinopower Semiconductor Co., Ltd and dedicated to promoting the industrialization of GaN power devices.

Topic

Efforts towards GaN power FETs in Sinopower Semiconductor

Abstract

Recently, lots of efforts have been devoted globally to develop high-performance GaN-based transistors on Si substrate for next generation high power swiching applications. To promote the power electronic industry development in China, Sinopower Semiconductor Co., Ltd (SPS) was established in May 2016, which settled in Wujiang District, Suzhou city, Jiangsu Province. SPS dedicates to build the industrial basement of GaN power electronics of China in next coming 3~5 years and expects to become the world's leading provider of GaN power electronic devices. SPS has united a powerful industrial team with multiple resources, which covered from academy to technology, government, finance, manufacturing and to marketing, etc. At present, SPS has comprehensively mastered high-conductivity, high-blocking voltage and high-stability GaN epitaxial technology on 6 inch& 8 inch Si substrate and stably yields GaN HEMTs on CMOS industry platform. In this talk, the development activities towards high quality GaN epitaxy on large size Si substrate and high performance E-mode GaN power FETs will be presented.