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March 14-16,2018
Shanghai New International Expo Centre

Dr. Frank Yang

Dr. Frank Yang
GOBALFOUNDRIES, USA

Frank Yang is a Senior Member of Technical Staff and the 32nm-CMOS R&D Project Leader at the Technology Origination Group in GOBALFOUNDRIES with IBM Alliance. Since he joined AMD/GLOBALFOUNDRIES in 2005 as a lead technologist, Frank lead teams to the successful demonstration of a few critical R&D projects, such as milestone poly-Silicon gate (110) pMOS with 1mA/um drive current (VLSI’2007, IEDM’2007 late news), and in-situ Phosphorus-doped eSi:C stressor for state-of-the-art nMOS (IEDM’2008). Before joining AMD/GLOBALFOUNDRIES, Frank was a research scientist with Lucent Technology/Agere Systems at Bell Laboratories working on HiK gate dielectrics for III-V MOSFET. Frank Yang is a reviewer for IEEE Electron Device Letters and Transactions on Electron Devices, Applied Physics Letter, and Journal of Applied Physics. He has published 60 technical papers in peer-reviewed journals and conferences, and delivered invited talks in reputed international conferences. Frank has received Ph.D in Semiconductor Material and Device Physics from Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, in 1995.