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March 20-22, 2019
Shanghai New International Expo Centre

Dr. Wendy Yan

Dr. Wendy Yan

Research Staff Member
IBM Thomas J. Watson Research Center, USA


Dr. Wendy Yan is a Research Staff Member at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York.  She joined the DRAM Development Alliance of IBM Microelectronics in 1997 and has worked on plasma etching process development for advanced semiconductor applications including memory, embedded memory, high performance logic.  She is currently working on exploratory devices beyond the CMOS era. She is a Master Inventor of IBM and recipient of several corporate awards. Prior to joining IBM, she worked with Applied Materials Corporation in the areas of metal and oxide etching.  Dr. Yan received a Ph.D. in Ceramics Engineering from Rutgers University, where she studied microelectronics substrate materials.