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March 20-22, 2019
Shanghai New International Expo Centre

Prof. Daniele Lelmini

Prof. Daniele Lelmini
Politecnico Di Milano, Italy

Daniele Ielmini is a Full Professor at the Dipartimento di Elettronica, Informazione e Bioingegneria of Politecnico di Milano. He received the PhD from Politecnico di Milano in 2000, and he held visiting positions at Intel Corporation and Stanford University (2006). His research interests include the modeling and characterization of non-volatile memories, such as phase change memory (PCM), resistive switching memory (RRAM), and spin-transfer torque magnetic memory (STT-MRAM). He authored/coauthored 10 book chapters, more than 250 papers published in international journals and presented at international conferences, and 6 patents. He has served in several Technical Subcommittees of international conferences, such as IEEE-IEDM (2008-2009, 2017-2018), IEEE-IRPS (2006-2008), IEEE-SISC (2008-2010), INFOS (2011-2017), and IEEE-ISCAS (2016-2018). He is Associate Editor of IEEE Trans. Nanotechnology and Semiconductor Science and Technology (IOP), and a Senior Member of the IEEE. He was recognized a Highly Cited Researcher by Thomson Reuters in 2015. He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE-EDS Paul Rappaport Award in 2015.