为了您获得更好的浏览体验,请将您的浏览器更新到最新版本!
+86.21.6027.8500
English
June 27-29, 2020
Shanghai New International Expo Centre

Power & Compound Semiconductor International Forum

The New Dates of SEMICON/FPD China 2020

Exhibition/展览日期:June 27-29/6月27日-29日
Concurrent Forum/同期会议:June 26-29/6月26日-29日
Location/展览及会议地点:SNIEC and Kerry Hotel/上海浦东新国际博览中心及上海浦东嘉里大酒店

Power & Compound Semiconductor International Forum
Date: Friday-Saturday, June 26-27, 2020
Venue: Pudong Ballroom 4, Shanghai Pudong Kerry Hotel, No.1388 Huamu Road Pudong, Shanghai
Chinese and English Simultaneous Interpretation will be provided

Attendee Registration   Previous Review

The "Power & Compound Semiconductor International Forum 2020", which is one of the largest professional event about power and compound semiconductor industry in Asia, will be organized in conjunction with SEMICON China 2020 on June 26-27, 2020 in Kerry Hotel at Shanghai.
The Forum is a two-day program and focuses on topics including: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

SPONSORS

         
         
 
         
THANKS

   
   
Day1-June 26th, 2020
   
08:30-09:15 Registration/注册
   
09:20-09:30
Welcome Remark/欢迎致辞
Lung Chu 居龙
President, SEMI China
SEMI中国,总裁
   
09:30-11:30 Opening Keynote Session / 开幕主旨演讲
   
Moderator/主持人:
Naiqian Zhang 张乃千
President of Dynax Semiconductor, Inc.
总裁,苏州能讯高能半导体有限公司
   
Keynote Speech: Compound Semiconductors - Unleashing the Power
大放异彩的化合物半导体

Drew Nelson
CEO, IQE
首席执行官, IQE
   
Keynote Speech: Latest Packaging Developments Enhance Performance of Silicon Carbide (SiC) Power Devices
用于加强碳化硅功率器件性能的最新封装技术

Filippo Di Giovanni
STMicroelectronics
意法半导体
   
Keynote Speech: Toward for Ultimate Displays with MicroLED
迈向终极显示技术 -- MicroLED

Yun-Li (Charles) Li 李允立
CEO, PlayNitride
首席执行官,錼创科技
   
Keynote Speech: Enabling Solutions for High Volume Manufacturing of Wide Bandgap Materials
用于宽禁带半导体材料大规模生产的解决方案

Jens Voigt
Director Product Management, AIXTRON SE
德国爱思强股份有限公司
   
11:30-13:30 Break (休息)
   
13:30-14:00
Keynote Speech: Recent Progress in Low Cost High Yielding Silicon Carbide for Power Electronic Industry
电子电力行业低成本高成品率碳化硅的最新进展

P.S.Raghavan
CTO, GT Advanced Technologies
首席技术官
   
Session: Compound Semiconductor in Optoelectronics, Communications 化合物半导体与光电及5G通讯
   
14:00-14:30
VCSELs and ToF Modules for 3D Sensing
用于三维传感的VCSEL和ToF模块

Xiaochi Chen 陈晓迟
General Manager, Vertilite Co., Ltd
总经理,常州纵慧芯光半导体科技有限公司
   
14:30-15:00
Compound Semiconductor in Wireless Communication: Opportunities & Challenges
化合物半導體於無線通訊之展望與挑戰

Chuck Huang 黃智文
Associate Vice President, Win Semiconductors Corp.
協理,穩懋半導體
   
   
15:00-15:30
From Si to Compound Semiconductor--EPI Technology and Application in Power Electronic Devices
从硅基到化合物半导体 - EPI技术及其在电力电子器件中的应用

Naura
北方华创
Speaker TBD
   
15:30-16:00
Advanced Plasma Processing Solutions for High Performance VCSELs and EELs: Feature Etching and Thin Film Deposition. Enabling Cost Down Per Wafer and Critical Device Performance
先进等离子加工技术于高性能VCSEL和EEL的解决方案:特征蚀刻和薄膜沉积。降低晶圆成本及关键设备性能

Robert Gunn
Senior Product Manager – Etch, Oxford Instruments Plasma Technology
蚀刻机高级产品经理,英国牛津仪器
   
16:00-16:30
RF GaN Technology Solutions for 5G
适用于5G的射频氮化镓技术解决方案

Markus Behet
CMO, EpiGaN / Soitec
首席市场官
   
   
Day2-June 27th, 2020
   
Session: Wide Band Gap Semiconductors & Emerging Power Devices 宽禁带半导体及新型功率器件
   
Moderator/主持人:
David Xiao 肖国伟
CEO, APT Electronics
首席执行官,广东晶科电子股份有限公司
   
09:30-09:55
Technical Problems and Research Progress of SiC Power MOSFET
碳化硅功率MOSFET技术问题及研究进展

Song Bai 柏松
Professor, Zhongdian Guoji South Co. , Ltd.
教授级高工,中电国基南方有限公司
   
09:55-10:20
Progress in Study and Industrialization of Wide Bandgap Semiconductor SiC Substrate
宽禁带半导体碳化硅衬底研究和产业进展

Chunjun Liu 刘春俊
Vice President, CTO, TankeBlue Semiconductor Co., Ltd.
副总经理、技术总监,北京天科合达半导体股份有限公司
   
10:20-10:45
Recent Advances of ALD Technology for Power & Compound Semiconductor Applications - A Prospect of Innovation and Localization in China
原子层沉积技术在功率及化合物半导体的应用及国产化创新的展望

Wei-Min Li 黎微明
CTO, Jiangsu Leadmicro Nano Technology Co.,Ltd.
首席技术官,江苏微导纳米股份有限公司
   
10:45-11:10
Advances in PVD Techniques for SiC and GaN Power Devices
应用于碳化硅和氮化镓功率器件的PVD技术的进步

Anthony Barker
PVD Product Manager, SPTS Technologies
PVD产品经理
   
11:10-11:35
Ga2O3 Power Device Technology (Pending)
氧化镓功率器件技术(拟)

Igawa Takuto 井川 拓人
VP of sales, Flosfia Inc.
销售副总裁,株式会社FLOSFIA
   
11:35-12:00
200mm/8-inch GaN Power Device and GaN-IC Technology: A New Opportunity for Wafer Suppliers, Foundries and IDMs
8英寸GaN功率器件及IC技术:晶圆供应商、代工厂、IDM厂商的新机遇

Denis Marcon
IMEC
   
12:00-13:30 Break (休息)
   
Moderator/主持人:
Filippo Di Giovanni
STMicroelectronics
意法半导体
   
13:30-14:00
Challenges of Driving Wide-Bandgap Semiconductors and The Use of Smart Integration to Maximize The Performance of GAN Switches
用于氮化镓器件优化的智能集成及宽禁带半导体之挑战

Jason Yan
Power Integrations, Inc.
   
14:00-14:25
Development of High Power SiC Power Modules for NEV and Traction Application
用于新能源汽车和牵引应用的大功率SiC功率模块开发

Makan Chen 陈马看
Senior Technical Sales Manage, ABB Switzerland Ltd
高级技术销售经理, ABB 瑞士
   
14:25-14:50 TBD (Speech Reveserd)
   
14:50-15:15
Advanced High Voltage Bulk & SOI Technologies for Smart Power Applications
适用于智能电源应用的高级高压本体和SOI技术

Dr. Hongning Yang
Tower Semiconductor Principal Engineer, Power Management Group
首席工程师
   
15:15-15:45
GaN for Cars
用于现代交通的氮化镓技术

Alex Lidow
CEO and Co-founder, Efficient Power Conversion Corporation
首席执行官兼联合创始人,美国宜普电源
   
15:45-16:05 Lucky Draw 幸运抽奖
   
   
Two-day registration fee:
Type Before June 5th with Advanced Payment(Early Bird) After June 5th and On-site
Attendees RMB 1,000 per person RMB 1,500 per person
Speakers Free Free
* Lunch is not included
* Agenda is subject to change