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March 14-16,2018
Shanghai New International Expo Centre

Symposium I: Design Engineering and Memory Technology



Symposium I: Device Engineering and Memory Technology 

Symposium Committee

Dr. Ru HUANG 
Chair
Peking University , China
Dr. Cor CLAEYS
Co-Chair
IMEC, Belgium

Dr. Minhwa CHI
Co-Chair

SMIC, China
Dr. Chung LAM
Co-Chair
IBM T. J. Watson Research Center, USA
Dr. Jong-Ho Lee
Co-Chair
Seoul National University, Korea
Dr. Ming LIU
Co-Chair
IME, CAS, China
Dr. Yimao Cai
Member
Peking University, China
Dr. Shaoning MEI
Member
Wuhan Xinxin Semiconductor Manufacturing Corp, China
Dr. Wensheng Qian
Member
HHGrace, China
Dr. Huiling SHANG
Member
TSMC
Dr. Zhiqiang Wei
Member
Panasonic, Japan
Dr. Hong WU
Member
SMIC, China
Dr. Huaqiang Wu
Member
Tsinghua University
Dr. Frank Bin Yang
Member
Qualcomm, USA
Dr. Huilong Zhu
Member
IME, CAS, China
Dr. Mario Lanza
Member
Soochow University, China


Symposium I: Device Engineering and Memory Technology

  • Advanced MOS devices
     
  • Memory devices (DRAM, SRAM, Flash, emerging memory devices)

  • Device reliability

  • Mobility enhancement technology

  • Shallow junction formation

  • Source/drain engineering (silicide/salicide)

  • RF/HV/Power devices

  • Other emerging devices