Dr. Xiabing Lou

VP of Suzhou Origin Materials Technology Co,. Ltd.


Dr. Xiabing Lou received his chemistry Ph.D. from Harvard under the supervision of Prof. Roy Gordon. He had developed a series of ALD epitaxial high-k dielectrics and applied them in a variety of compounded semiconductor devices. During his staying in Cambridge Electronics, he developed the dielectric process for GaN devices and led the taping out of the world's first 8" enhancement mode GaN/Si. Currently he is serving as the VP of Suzhou Origin Materials Technology Co,. Ltd.