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Daniele Ielmini is a Full Professor at the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy. He received the Ph.D. from Politecnico di Milano in 2000. He held visiting positions at Intel Corporation (2006), Stanford University (2006) and the University of Illinois at Urbana-Champaign (2010). His research interests include non-volatile memories, such as phase change memory (PCM), resistive switching memory (RRAM), and spin-transfer torque magnetic memory (STT-MRAM), and novel in-memory computing circuits. He authored/coauthored 15 book chapters, more than 400 papers published in international journals and presented at international conferences, and 8 patents. He is Associate Editor of IEEE Trans. Nanotechnology and Semiconductor Science and Technology. He received the Intel Outstanding Researcher Award, the Ovshinsky Award, the IEEE-EDS Paul Rappaport Award, the ERC Consolidator Grant and the ERC Advanced Grant. He is a Fellow of the IEEE.
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