Symposium IV: Thin Film, Plating and Process Integration

Symposium Committee

Dr. Zhen Guo Chair	Intel, China
Dr. Beichao Zhang Co-Chair	SMIC, China
Mr. Xiaoping SHI Co-Chair	IMEC, Belgium
Dr. Chao Zhao Co-Chair	IME, CAS, China
Dr. Huang Liu Co-Chair	Global Foundries, USA
Dr. Jiang Yan Co-Chair	Institute of Microelectronics, CAS
Dr. Ran LIU Co-Chair	Fudan University, China
Dr. Sowmya KRISHNAN Co-Chair	SEMITRAC, USA
Dr. Ning Cheng Member	Intel, USA
Dr. Jon REID Member	Novellus, USA
Prof. YuLong JIANG Member	Fudan University, China
Dr. Li-Qun Xia Member	AMAT, USA
Dr. Julian Hsieh Member	ASM, Taiwan
Dr. Chih-Chao Yang Member	IBM
Dr. Jianhua Ju Member	SMIC, China
Dr. Massayasu Tanjyo Member	Nissin Ion Equipment, Japan
Dr. Ganming Zhao Member	Applied Materials
Dr. Zheyao Wang Member	Tsinghua University, China
Dr. Da Zhang Member	Higon, USA
Dr. Larry Zhao Member	Lam Research, USA
Dr. Jiaxiang Nie Member	Lam Research, China

High k gate dielectrics and metal gates thin film materials, processes and integration schemes
Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation.
Processes, properties, integration and reliability for low k dielectric materials
Thin film processes and materials for high aspect ration gap fill
Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
Cleaning technology in manufacturing
Innovative metrology for 45nm and beyond
Electroplating and electroless deposition materials and processes
Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels.
Key process module development and integration
Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
Strained silicon process and integration
Reliability of copper/low-k interconnect
High-k/metal gate and future transistors
Plasma assisted material processes
Implantation and millisecond anneal