Symposium IV: Thin Film, Plating and Process Integration

Symposium IV: Thin Film, Plating and Process Integration

Symposium Committee

Dr. Zhen Guo Chair	Intel, China
Dr. Beichao Zhang Co-Chair	HFC Semiconductor, China
Mr. Xiaoping Shi Co-Chair	Beijing Naura Microelectronics, China
Dr. Chao Zhao Co-Chair	IME, CAS, China
Dr. Huang Liu Co-Chair	Global Foundries, USA
Dr. Jiang Yan Co-Chair	North China University of Technology, China
Dr. Ran LIU Co-Chair	Fudan University, China
Dr. Sowmya KRISHNAN Co-Chair	SEMITRAC, USA
Dr. Ning Cheng Member	Intel, USA
Dr. Jon REID Member	Lam Research, USA
Prof. Yu-Long Jiang Member	Fudan University, China
Dr. Li-Qun Xia Member	AMAT, USA
Dr. Julian Hsieh Member	ASM, Taiwan
Dr. Chih-Chao Yang Member	IBM
Dr. Jianhua Ju Member	SMIC, China
Dr. Ganming Zhao Member	Applied Materials
Dr. Zheyao Wang Member	Tsinghua University, China
Dr. Da Zhang Member	Higon, USA
Dr. Larry Zhao Member	Lam Research, USA
Dr. Jiaxiang Nie Member	Lam Research, China

Symposium IV: Thin Film, Plating and Process Integration

High k gate dielectrics and metal gates thin film materials, processes and integration schemes
  •  Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
  •  Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation
  •  Processes, properties, integration and reliability for low k dielectric materials
  •  Thin film processes and materials for high aspect ratio gap fill
  •  Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
  •  Cleaning technology in manufacturing
  •  Innovative metrology for 45nm and beyond

  •  Electroplating and electroless deposition materials and processes
  •  Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels
  •  Key process module development and integration
  •  Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing
  •  Strained silicon process and integration
  •  Reliability of copper/low-k interconnect
  •  High-k/metal gate and future transistors
  •  Plasma assisted material processes
  •  Implantation and millisecond anneal