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邱汉钦 英诺赛科(珠海)科技有限公司，工艺研发副总经理 |
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个人简介 Professional Summary Over 10yrs experience on GaN based devices process development and successful delivery of technology transfer into production. Atomic-Layer-Deposition (ALD) high-k and metal materials R&D for both advanced and specialty technologies. Education • Bachelor, 2002-2005 Chemical Engineering, National Cheng-Kung University, Taiwan, China • Master, 2005-2007 Materials Science and Engineering, National Cheng-Kung University, Taiwan, China • PhD, 2007-2011 Materials Science and Engineering, National Tsing-Hua University, Taiwan, China Experience • [2011] – [2018]> Specialty Technology R&D, TSMC, Taiwan, China.> R&D module of GaN power & RF devices> R&D module of High-k dielectric technology> R&D module – ALD, CVD, PVD, & CMP advanced process> • [2018] – Now> Innoscience (Zhuhai) Technology Co., Ltd.> Vice President of R&D module and FAB Manager> 摘要 Gallium nitride (GaN) HEMTs are the most promising candidates for the next-generation power devices with features of high breakdown strength and fast switching speed as well as low on-resistance. In the past 10 years or so, commercialization of GaN-on-Si power devices has been demonstrated. In particular, CMOS compatible 8 inch GaN-on-Si technology can provide low cost, high-volume production, and high-performance and stable products. Innoscience (Zhuhai) technology Co., Ltd. has successfully developed 8” GaN-on-Si power devices covering 30-650V for next generation power applications. |
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