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Rishikesh Krishnan is a senior technologist at IBM Research where he is responsible for strategic process development and integration. Rishikesh earned his PhD in Materials Science in 2005 from the University of Rochester, NY and subsequently started his career with Micron Technology Inc. At Micron, he was one of the early developers of high K dielectric and metals for leading edge DRAM technologies.
At IBM, he was a core part of the team that developed industry's first silicon on insulator (SOI) embedded DRAM (eDRAM) with high K dielectrics and metals and scaled it through three successive generations.
The eDRAM is a core compoment of IBM Systems today, and heavily utilized in two of the fastest supercomputers in the world.
Dr.Krishnan has 15 years industry experience working on FEOL and MOL modules for six logic and memory technology generations that have been taken to production.
Rishikesh holds 35 patents and 26 publications in peer reviewed journals and conference proceedings.
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