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CS Asia Conference - Opening Keynote / 亚洲化合物半导体大会 - 开幕主题演讲
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Day 1- Mar.25th, 2025 Shanghai Ballroom 3 / 上海厅 3
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13:15-13:30
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Welcome Remark / 欢迎致辞
Lung Chu 居龙
Vice President, SEMI; President, SEMI China
SEMI全球副总裁、中国区总裁
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13:30-14:00
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Compound Semiconductor - Age of Maturity
*化合物半导体-成熟"芯"时代
Dr. Felix J. Grawert
Chairman of the Executive Board, CEO & President
AIXTRON SE
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14:00-14:30
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Reserved
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14:30-15:00
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Next Generation Power Semiconductors (SiC and GaN) Enabling A World of Decarbonization and Digitalization
*下一代功率半导体（SiC 和 GaN），实现脱碳和数字化世界
SCHOISWOHL Johannes
Senior Vice President and General Manager
Infineon Technologies Austria AG
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15:00-15:30
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Innovation in Ion Implanation for Power and Compound Semiconductor Devices
*功率及化合物半导体器件中的离子注入技术革新
Russell Low
President & CEO
Axcelis Technologies
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15:30-16:00
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MicroLED Display Technology Mass Production Strategy
MicroLED 前瞻顯示技術量產策略
Dr. Yun-Li (Charles) LI 李允立
Chairman, PlayNitride Inc.
董事长，錼創科技
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16:00-16:30
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Next Generation GaN Platform for High-Density DC-DC Converters
*用于高密度 DC-DC 转换的下一代 GaN 平台
Jianjun (Joe) CAO 曹建军
Co-founder
Efficient Power Conversion (EPC) Corporation
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16:30-17:00
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200mm SiC Substrate Development and 300mm SiC Opportunities & Challenges
200mm SiC衬底进展和300mm SiC衬底的机遇与挑战
Chao GAO 高超
CTO, SICC CO., LTD.
CTO，山东天岳
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Session 1: Ultra-wide Bandgap Semiconductors Materials / 分会1：超宽禁带半导体材料
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Day 2- Mar.26th, 2025 Shanghai Ballroom 3 / 上海厅 3
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09:15-09:45
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Recent Progress and Device Prospects on Bulk AlN Crystals Grown by PVT Method
*PVT方法生长的氮化铝单晶最新进展及器件展望
Liang WU 吴亮
CEO, Ultratrend Technologies
CEO，奥趋光电
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09:45-10:15
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Key Developments and Challenges in CVD Diamond Substrates for Electronic Device Applications (Pending)
Daniel Twitchen
Executive Director, Business Development & Technologies Sales
Element Six
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10:15-10:40
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The Current Industrial Situation and Prospects of The Development of The 4th Generation Semiconductor Ga2O3
第四代半导体氧化镓的产业发展现状与前景
Zhengwei CHEN 陈政委
CEO, Beijing MIG Semiconductor Co., Ltd.
CEO，北京铭镓半导体有限公司
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10:40-11:05
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Progress of Ultra-Wideband Diamond Semiconductor Material and Devices Research
超宽禁带金刚石半导体材料和器件研究进展
Xing ZHANG 张星
CEO, Compound Semiconductor (Xiamen) Technology Co., Ltd.
CEO，化合积电（厦门）半导体科技有限公司
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11:05-11:30
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Reserved
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Session 2: Innovative Technologies for Compound Semiconductors / 分会2：化合物半导体的革新技术
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Day 2- Mar.26th, 2025 Shanghai Ballroom 3 / 上海厅 3
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13:30-14:00
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Progress of Large-scale and High-quality Gallium Oxide Single Crystal Semiconductor Materials
大尺寸高质量第四代半导体氧化镓单晶衬底材料新进展
Jiwei JIANG 江继伟
Co-Founder, Hangzhou Garen Semiconductor Co., Ltd
联合创始人，杭州镓仁半导体有限公司
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14:00-14:25
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Reserved
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14:25-14:50
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Compound Semiconductor XRF Mesurement Technology & Equipment
化合物半导体XRF测量技术与设备
Jie REN 任杰
General Manager, Chief Executive Officer, Gazer Semiconductor Tech Co., Ltd.
总经理兼CEO，盖泽半导体
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14:50-15:15
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Novel Techniques for Production Molecular Beam Epitaxy
*分子束外延制造新技术
Matthew Marek
Sr. Director of Product Line Management
Veeco Instruments Inc.
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15:15-15:40
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Precise Strain-engineering of 300 mm GaN-on-Si Micro LED Epiwafer to Open The Path to Silicon Industry Fabs
*300 mm 硅基氮化镓 Micro LED 外延片的精确应变工程，打开通向硅晶圆制造之路
Nishikawa Atsushi
CTO
ALLOS SEMICONDUCTOR
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15:40-16:05
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Reserved
CETC
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16:05-16:30
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Reserved
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Session 3: III-V Compound Semiconductors / 分会3：III-V 化合物半导体
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Day 3- Mar.27th, 2025 Pudong Ballroom 1 / 浦东厅 1
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09:15-09:45
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Journey through The Frequency Domain-Compound Semiconductor
*频域化合物半导体之旅
Dr. BARRY JIA-FU LIN 林嘉孚
CTO, Wavetek Microelectronics
技術長，聯穎光電股份有限公司
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09:45-10:15
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Research and Development on High Power Semiconductor Edge and Surface Emitting Lasers
*高功率半导体边缘及表面发射激光器的研究与开发
Shunfeng LI 李顺峰
Executive Director, Suzhou Everbright Institute of Semiconductor Lasers
苏州长光华芯光电技术股份有限公司
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10:15-10:40
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An Introduction to The Reliability Test & Verification Technology for Compound Semiconductor and Integrated Circuit
Yinfei XUE
VP
Shanghai FeedliTech Co.,Ltd.
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10:40-11:05
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Scaling Compound Semiconductor Materials for Future Markets
*面向未来市场的化合物半导体材料
Tim Bettles
VP of Business Development
AXT
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11:05-11:30
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Research Progress on Antimonide Lasers
*锑化物激光器的研究进展
Yu ZHANG 张宇
Professor, IOS, CAS
教授，中科院半导体所
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Session 4: GaN, SiC Materials, Equipment and Power Device / 分会4：氮化镓，碳化硅材料、设备及功率器件应用
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Day 3- Mar.27th, 2025 Pudong Ballroom 1 / 浦东厅 1
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13:30-14:00
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The Enabling Impact of Silicon Carbide Today and Tomorrows New Horizons
Guy Moxey
VP of Power Development
Wolfspeed
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14:00-14:25
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Reserved
Onto Innovation,Inc.
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14:25-14:50
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Will SiC Survive The Emergence of Super-High Voltage GaN?
*SiC 能否在超高压 GaN 的兴起中生存下来？
Doug Bailey
VP of Marketing
Power Integrations
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14:50-15:15
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TBD
David Haynes
Vice President of Specialty Technologies and Strategic Marketing
Lam Research Corporation 泛林集团
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15:15-15:40
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Reserved
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15:40-16:05
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Proposal for Solving Problems Using 4H-SiC Bonded Substrate
*解决 4H-SiC 键合衬底的使用问题的建议
Koya Shimizu
President
SICOXS CORPORATION
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16:05-16:35
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Closing Keynote：Recent Progress of 200 mm SiC Crystal Growth and Homoepitaxy
*闭幕演讲：8寸碳化硅晶体生长及同质外延最新进展
Chunjun LIU 刘春俊
CTO, Beijing Tankeblue Semiconductor Company
CTO，北京天科合达半导体股份有限公司
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16:35-16:45
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Lucky Draw 幸运抽奖
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