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Zhengwei CHEN 陈政委 CEO, Beijing MIG Semiconductor Co., Ltd. 北京铭镓半导体有限公司，CEO |
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讲师简介 / Speaker Bio Dr. CHEN, graduated from Saga University in March 2017, and established Beijing MIG Semiconductor Co., Ltd. in November 2020. As the first researcher to realize Ga2O3 based electroluminescent device in the world, CHEN have published over 40 papers related to Ga2O3 and undertaken a number of major research projects at the provincial and ministerial levels, the funding amount exceeds 7 million dollars. CHEN have won many honors, such as the Beijing High level Talent Project in 2020, the 2021 WUTONG Project High level Talent in Beijing, and the ‘Ten Thousand Talents Plan’ of the Ministry of Science and Technology in 2021. 摘要 / Abstract Beijing MIG Semiconductor Co., Ltd. is the first company which is specializing in the commercial mass production of Ga2O3 materials in China. The company is committed to researching and producing high-quality single crystal and epitaxial productions based on ultra-wide bandgap semiconductor material Ga2O3, high-sensitivity solar-blind UV detection devices, high-frequency / high-power devices, etc. It has the world's leading Ga2O3 single crystal growth equipments, epitaxial thin film growth equipments MOCVD/HVPE, various processing, testing and characterization equipments. MIG is one of the advocates of the industrialization of Ga2O3 materials in China. MIG has successfully grown (010) and (001) direction Ga2O3 single crystals for power semiconductor devices based on the EFG method. According to testing, the full width at half maximum (FWHM) of the rocking curve of the 2-inch (010) Ga2O3 crystal is 47.88 arcsec, and the average surface roughness after processing is about 0.2 nm. The FWHM of the 3-inch (010) Ga2O3 crystal is 103.32 arcsec, with an average surface roughness of approximate 0.65 nm. At present, the preparation of SBD devices with a voltage resistance greater than 3000 V has been completed, based on the Ga2O3 material produced by MIG. |
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