David Haynes
Vice President of Specialty Technologies and Strategic Marketing, Lam Research Corporation
特色工艺及战略营销副总裁，泛林集团

讲师简介 / Speaker Bio

David gained a BEng and PhD in Materials Engineering from Swansea University.
In his professional career, David has accrued more than 25 years of experience in the Semiconductor Capital Equipment and research instrumentation sectors. Focused on new technology development, he has a strong process background in plasma etch and deposition for optoelectronics, photonics, MEMS, Power and RF Electronics, as well as advanced chip packaging technologies.
Building on this technical knowledge, David has a proven track record in developing strategic business partnerships, specializing in new technology developments and introduction of enabling process capabilities to leading semiconductor fabs worldwide.
David joined Lam Research in June 2016. He is currently Vice President of Specialty Technologies and Strategic Marketing in Lam’s Customer Support Business Group and is responsible for Lam’s strategy in Specialty Technologies.

摘要 / Abstract

氮化镓（GaN）是最重要的第三代半导体材料之一，其宽禁带特性使其成为大功率电子器件的理想选择——氮化镓高电子迁移率晶体管（HEMT）已在消费类快充等特色工艺技术应用中确立重要地位，并在汽车电子领域日益受到关注。

目前最先进的氮化镓器件制造基于200毫米晶圆。然而，近期300毫米硅基氮化镓（GaN-on-Si）金属有机化学气相沉积（MOCVD）技术的突破正在推动氮化镓技术在下一个发展阶段中采用更大尺寸晶圆。随着生成式人工智能的快速崛起加速数据中心投资，面向数据中心电源管理应用的低压氮化镓功率电子器件的制造正引发越来越多的关注。

近十年来，泛林集团始终引领半导体特色工艺领域的技术发展，在推动硅基氮化镓（GaN-on-Si）的200毫米晶圆制造工艺能力方面处于领先地位。我们将在演讲中回顾氮化镓器件工艺技术能力的现状，并探讨从200毫米晶圆向300毫米晶圆生产过渡所面临的挑战与机遇。