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Chao GAO 高超 CTO, SICC CO., LTD. 山东天岳，CTO |
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讲师简介 / Speaker Bio Gao Chao, male, born in 1987, Chinese, PhD degree, doctor of engineering, majoring in materials physics and chemistry. From November 2020 to present, he has been the chief technology officer of SICC. 摘要 / Abstract Technical development of large-sized SiC substrates will be presented. Technical progress of 200 mm SiC substrate in volume production and 300 mm SiC substrates development will be demonstrated. The challenges and opportunities of 300 mm in the industry is to be discussed. |
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