Koya Shimizu
President, SICOXS CORPORATION

讲师简介 / Speaker Bio

President of SICOXS Corporation.
Joined Sumitomo Metal Mining in 1993 and engaged in the development of new semiconductor materials and manufacturing processes.
Joined SICOXS Corporation in 2020 as the general manager of the development and production department and became the president in 2024.

摘要 / Abstract

SICOXS Corporation has developed 4H-SiC bonded substrate “SiCkrest” as the new technology to replace a bulk SiC substrate.
SiCkrest is an innovative product that maximizes the utilization efficiency of bulk SiC substrate and can be manufactured using SICOXS's leading patents.
In this session, we will introduce the features of the SiCkrest manufacturing technology and the benefits of applying SiCkrest to SiC power devices.