Date: Sunday, June 28, 2020 (Online Conference)
   

Dr. Yu Zhu
Executive Assistant to CEO,
Jiangsu Advanced Memory Semiconductor (AMS) Co., Ltd

ABSTRACT
Phase change material and phase change memory (PCM) research and development started more than 40 years ago. Until recent years, high density, high speed memory products based on PCM technology have been introduced by major semiconductor memory companies. In this tutorial, I will briefly introduce the PCM fundamental working principle, and its potential applications. PCM has many types of memory cell design. Further scaling of PCM memory cell size helps reducing the operation current, but programing efficiency need to be addressed. PCM reliability including data retention and cycling endurance will be discussed in the talk. For high density PCM, 3D cross-point structure is needed. Besides the phase change materials, the selector is also important for 3D PCM. PCM technology is compatible with CMOS process, examples of embedded PCM will be discussed as well.

   
  BIOGRAPHY
Yu Zhu is the executive assistant to CEO at Jiangsu Advanced Memory Semiconductor (AMS) Co., Ltd, where he leads the phase change memory technology development. He jointed phase change memory group at IBM T.J. Watson Research Center in 2006. Later, he became the manager of advanced material characterization group at IBM. Between 2017 and 2019, he was the department manager at TSMC leading the transmission electron microscopy (TEM) operation for the company. He Yu Zhu received his Ph.D. from College of Nanoscale Science and Engineering of University at Albany – SUNY in 2006. Dr Zhu has 30 granted US patents and co-authored more than 80 technical papers in journal and conference, including Nature, Science, IEDM and VLSI.