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Effect of probe station tips pressure in the characterization of memristors
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Ying Zuo, Soochow University
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Transmission electron microscopy based quality analysis of commercially available graphene oxide quantum dots
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Biyu Guo, Soochow University
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Study of Shallow Trench Isolation Gap-fill for 19nm NAND Flash
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Li Peng, Hongbo Li, Tiantuo Sun, Xing Gao, Qin Sun, HLMC
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Local Mismatch Model Modeling Method for MOS Transistors
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Gu Jinglun, HLMC
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An application of LDMOS on ESD protection
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Li Wang, HHGrance WUXI
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HV Gate Oxide Over-Oxidation Process Optimization for SONOS 1.5T Flash Cell
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Jian Zhang, HHGrance WUXI
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Potential Applications of h-BN Crystals in Future ULSI
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Guangyuan Lu, HHGrance WUXI
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Improved HCI of Embedded High Voltage EDNMOS in advanced CMOS Process
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LIU JUNWEN, HHGrance WUXI
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Image Aberration Correction for Lithography Machine Illuminant based on Schmidt Corrector Plate
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LiMing, Zhanglidong, HLMC
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Improved Standby Leakage of Huge Volume SRAM by Thin SIN Film of STI Liner
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Xiaobing.Ren, HHGrance WUXI
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A Study of damage cause of extremely thin PR line in etch process and solution in 19NAND Process
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Zheng hongzhu; Wang Baoguang; Zhao Bin, HLMC
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A Study of Plasma Damage induced floating Poly Structure OTP or MTP Reliability fail
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ChenYu, HHGrance WUXI
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Minimized junction leakage current for nanoscale MOS device applications
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Wenqi Bai, HLMC
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Study of Related Yield Loss and Mechanism of NOR Flash Self-Align-Source
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Zhi Tian, HLMC
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High performance HVNMOS development for advanced planner NAND flash
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Juanjuan Li, Zhi Tian, Xiaohua Ju, Tao Liu, Shaokang Yao, Haewan Yang, Yaoyu Chen, HLMC
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Development of low leakage current in extreme PFET device
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Wenqi Bai, HLMC
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Demonstration of the Novel Low-Power Fully Self-Aligned Split-Gate SONOS Embedded Flash
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Zhaozhao Xu, HHGrace
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Investigation of Hot Carrier Effect of A Novel STI-Based n-Type LDMOS Transistors
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Zhaozhao Xu, HHGrace
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A New Integration flow Study of ONO film Uniformity and Silicon recess improvement for 2T-SONOS Flash
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Liqun Dong, HLMC
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A New structure of ILD Gap Filling Improvement for Floating-gate Memory
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Zhenghong Liu, HLMC
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Study of GIDL improvement for 2T-SONOS Flash
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Zhenghong Liu, HLMC
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One new calibration structure of MOSFET gate oxide capacitor
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Han Xiaojing, HLMC
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Effective approaches for SACVD particle performance improve
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Yongxiang Zhao, Applied Materials China
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AMAT Preclean --- a more aggressive contact clean
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Jian Xiao, Applied Materials China
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Narrow-band mask synthesis with semi-implicit difference
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Yijang Shen, Guangdong University of Technology
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Wafer Edge Peeling Defect Mechanism Analysis and Reduction In IMD Process
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Feng Yali, HLMC
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Evaluation of pre silicide implant from low temperature to room temperature
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Zhou Chun, HLMC
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Process Control in Multi-Station PECVD Systems
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Xin Gan, Mao Sen Li, Yu Shan Chi, Lam Research (Shanghai) Co., Ltd.
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Fragmentation of Square Pattern Mask with Small Corner-to-Corner Space
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Yu Shirui, Chen Yanpeng, Wang Dan, Deng Guogui, Hu Yidan, HLMC
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Study of low pinch-off voltage JFET in 500V high voltage process
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Wenting Duan, HHGrace
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STUDY OF MOSFET IDVG CURVE DOUBLE HUMP EFFECT
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Jun Hu, HHGrace
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Effect of implant beam current on resistance of BF2 implanted polysilicon
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Lichao Zong, HHGrace
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Deep Power Down Leakage Study Caused by Poly L-shape Pattern
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Chong Huang, HHGrace
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Virtual Source for an Odd Mathieu-Gauss Beam and Compare of the Functional Images of the Odd and Even
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Xuxin Qi, HLMC
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The study of 2D NAND flash CM2 etch top fence formation mechanism and solution
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Qian Tao, HLMC
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Detection of Electrical Defects by distinguish methodology using an Advanced E-beam Inspection System
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Shanshan Chen, HLMC
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High-density memristor crossbar arrays prepared by electron beam lithography
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Shisheng Xiong, Fudan university
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Study of Ultra-high Voltage BCD Process with Gate Oxide Thinning
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Donghua Liu, HHGrace
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THE METHOD OF IMPROVING ALD SICN FILM UNIFORMITY
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Hao Yanxia, HLMC
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Magnetoelectric memory cell based on microsized FeGa films on ferroelectric 50BZT–50BCT films
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Zhi Tao, Tianjin University of Technology
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The Effect of Fin Profile to 5nm Finfet Technology Design
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Enming Shang, Shanghai IC R&D Center
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Graphene Oxide for Nonvolatile Memory Application by Using Electrophoretic Technique
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Yong Zhang, Shanghai University
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A new method to reduce Ciss of SGT MOSFET
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Yulong Yang, HHGrace
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The effectively method of enhancing clean ability in Brush clean step
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Junyi Hu, Applied Materials
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Applied Centura® RP EPI Tool Enhances 12-Inch
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Chengpeng QIN, Applied Materials CHINA
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Advanced Remote Plasma Oxidation for Conformality Improvement on High Aspect Ratio (AR) 3D NAND Flash
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He Yang, Applied Materials China
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Applied Endura® SIP TTN™ for Titanium Silicide and Contact Glue Application in 300mm Power Devices
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Qingshan Zhang, Applied Materials China
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Mechanism Study of Wafer Surface Charge during Dual Damascene Process and an Effective Removal Method Using Functional Rinse
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Heguang Shi, Semiconductor Manufacturing International Corp.
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A Real Time Current Monitor on Ribbon Beam Implanter
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Peng Yue, Applied Materials
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AMAT PAD ETCH Chamber for High MTBC Requirement Solution
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Jing Tong, Applied Materials
|
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TaOx synapse array based on ion profile engineering for high accuracy neuromorpic computing
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Yuchao Yang, Peking University
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The causation and improvement of one type of particles occurring in Batch-clean tool
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Jing.Ye, Shanghai Huanhong Grace Semiconductor Manufacturing Corporation
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Impact of Nanopillar-type Electrode on HfOx -based RRAM Performance
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BaoTong Zhang, Peking University
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IMPROVEMENT ON ELECTRONIC CHARACTERISTICS OF TaOx/TiOx DUAL-LAYER STRUCTURE RESIATIVE MEMORY
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Yu She, Tianjin University of Technology
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An Efficient Method of SiN Residue and Divot Reduction by Integrated Process Optimization of STI CMP and Certas Etch
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Zhejun Liu, Shanghai Huali Integrated Circuit Corporation
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A NOVEL GATE ARCHITECTURE DESIGN IN STI BASED LDMOS
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Ziquan Fang, HuaHong Grace Semiconductor Manufacturing Corporation
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Impacts of Circuit Limit and Device Noise on RRAM Based Conditional Generative Adversarial Neural Network
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Shengyu Bao, Peking University
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Implementation of Graph Convolution Network based on Analog RRAM
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Daqin Chen, Peking University
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TCAD Simulation on Random Telegraphy Noise and Grain-induced Fluctuation of 3D NAND Cell Transistors
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Shijie Hu, Peking University
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A PHYSICAL CURRENT MODEL FOR MULTI-FINGER GATE TUNNELING FET WITH SCHOTTKY JUNCTION
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Yimei Li, Peking University
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Origin of Steep Subthreshold Swing within the Low Drain Current Range in Negative Capacitance Field Effect Transistor
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Chang Su, Peking University
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Circuit Reliability Evaluation of Approximate Computing
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Yuwei Zhang, Peking University
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The Plasma Assistant CD Shrinkage in Metal Gate Cut Process
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Shiliang Ji, SMIC
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Device Modeling and Application Simulation of Ferroelectric-FETs with Dynamic Multi-Domain Behavior
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Zhiyuan Fu, Peking University
|
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A Simple Current Test Method on Wafer Level to Pre-verify Circuit Function
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Jianrong Xu, HLMC
|
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A Novel Electrical Isolation Solution for Tunnel FET Integration
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Ting Li, Peking University
|
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SRAM and Single Device Isolation analysis in FinFET Technology
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Yijun Zhang, SMIC
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