Symposium Chair: Dr. Xiaoping Shi, NAURA, China


** to designate keynote talk - 30 min
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Monday, March 24, 2025 Shanghai International Convention Center
Meeting Room: TBD


Session I: Device Integration
Session Chair: Shi Xiaoping/Zhao Chao
**13:00-13:30 Diamond Based Heterjunction Devices: The Future of Diamond Electronics
  Haitao Ye, University of Leicester, UK
**13:30-14:00 Process and Outlook in GaN Devices and Its System Implementation
  Hongyu Yu, Southen University of Science & Technology
*14:00-14:25 Process Solution for Multiple Vt Engineering Beyond 3nm Technology Node
  Xiaona Zhu, Fudan University
*14:25-14:50 Innovative Pathways: Exploring New Frontiers with Established Chip Manufacturing Techniques
  Yunlong Li, Zhejiang University
*14:50-15:15 Synthesis and Optical Properties of Two-Dimensional Materials and Their Applications in Optoelectronics
  Chunxiao Cong, Fudan University
15:15-15:30 Study of Integrating Low Dielectric Films into MOSFET Process
  Miao Zhang, NAURA Technology Group Co., Ltd.  
15:30-15:45 Effect of High Temperature Furnace Anneal to Element Diffusion in SiO2-Si3N4 Stacks
  Huimin Ren, Beijing Superstring Academy of Memory Technology  
15:45-16:00 Coffee Break
   
16:00-17:55 Poster Session
   

Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room: TBD


Session II: Memory Technology
Session Chair: Jv Jianhua/ Gu Xun
**08:30-09:00 Enabling Material and Process Technology Capabilities for Emerging Memory Innovation in the AI Era
  Jerry Chen, Zhejiang Jingshen M&E Co., Ltd.
*09:00-09:25 IGZO 2T0C 3D DRAM
  Di Geng, Institute of Microelectronics, Chinese Academy of Sciences
09:25-09:40 Hydrogen-Free IBD IGZO Thin Films with Outstanding Thermal Stability and Improved Step Coverage
  Zichao Li, Jiangsy Leuven Instruments Co., Ltd.
09:40-09:55 Investigation of Performance Optimization in Bottom-Gate a-IGZO Thin-Film Transistors with Varying Thicknesses of PECVD-SiO2 Gate Dielectric
  Longge Mao, Institute of Microelectronics, Chinese Academy of Sciences
09:55-10:10 Selective Reflector Assisted Thermal Budget Decrease
  Jichu Zhang, NAURA Technology Group Co., Ltd.  
10:10-10:25 Coffee Break
   

Session III: FEOL Development
Session Chair: Gu/Jv Jianhua
**10:25-10:55 Implant Applications and Products to Enable Advanced Power Device Scaling and Revolution
  David(Wei) Zou, Applied Materials
*10:55-11:20 TBD
  Yukihiro Shimogaki, Tokyo Univeristy
*11:20-11:45 Inline Non-contacting Measurement of Effective Work Function
  Zheng Zou, GHS Semiconductor Co., Ltd.
11:45-12:00 Gapfill improvement with Helium/Argon sputter gas of HDP FSG in Power device
  Zibo Xue, Lam Research
12:00-12:15 Reduction of Wafer Backside Aluminum Contamination for HARP STI Process
  Zhuo Xiong, Applied Materials
12:15-13:30 Lunch Break
   

Session IV: BEOL Development
Session Chair:
Nie Jiaxiang/Wang Chenyu
*13:30-13:55 Material and Process Advances in Extending BEOL Cu Metallization and Beyond
  George Wu, GHS Semiconductor Co., Ltd.
*13:55-14:20 Interconnect Technology Evolution to Enhance Device Performance
  Hongxiu Peng, Anji Microelectronics
*14:20-14:45 The Challenges and Solutions of Damascus Copper Process
  Zhaoqin(Jimmy) Zeng, Shanghai Huali Integrated Circuit Corporation
*14:45-15:10 Basic Principle and Recent Tango of Reactive Sputter Process
  Qintong Zhang, NAURA Technology Group Co., Ltd.
15:10-15:25 Barrier and Seed Deposition Solution for Production of High Aspect-Ratio Through-Silicon Vias (TSV) Integrations
  Changzhou Wang, Shanghai BETONE Technology
15:25-15:40 Evolution Mechanism of Copper Grains In Advanced Interconnect Processes
  Yinuo Jin, ACM Research(Shangahi), Inc, Tsinghua University
15:40-15:55 Coffee Break 
   

Session V: Process development
Session Chair: Wang Chenyu/Nie Jiaxiang
*15:55-16:20 A structural perspective of ALD precursors' physical and chemical properties
  Xiabing Lou, Origin Demosition Materials Co., Ltd.
*16:20-16:45 PVD-related
  Xinfeng Zhang, Semiconshop
16:45-17:00 Optimization of The Synthetic Process Of Bis(Diethylamino)Silane Based on Response Surface Methodology
  Zhenjun Yuan, Chian Silicon Corporation Ltd.
17:00-17:15 Process Modeling and Uniformity Optimization in Low-temperature Si/SiGe Epitaxy
  Yanlin Mao, STR Software Technology Co., Ltd.
17:15-17:30 Enhancing Process Stability of AlN Thin Films through Pre-Deposition in Chamber and Optical Emission Spectroscopy Assisted by Big Data Analysis
  Yushin Chen, National Central University
17:30-17:45 The application of an almost forgotten theory to explain the leakage current mechanism in state-of-the-art high-k DRAM Capacitors
  Wai Shing Lau, Nanyang Technological University
17:45-18:00 A new theory of high-k electrode material versus low-k electrode material for high-k metal-insulator-metal capacitors
  Wai Shing Lau, Nanyang Technological University
   

Poster Session:

Effect of Sputtering Paraments on the Surface Morphology and Electrical Properties of Thin Film Resistors
  Lei Zhang, Zhejiang University
  Effect and Optimization of Ge Pre-Amorphous Implantation on Nickel Silicide
  Weitong Zhang, Zhejiang University
  Dry Etching of Reduced Thermal Budget Borophosphosilicate Glass (BPSG) using Furnace Anneal: the effect of phosphorus and boron concentration
  Dingting Han, Beijing Superstring Academy of Memory Technology
  Dielectric NDC Film Bonding Strength Improvement
  Junli Li, Lam Research
  Enhancement of adhesion properties of SiO2 film by gas atmosphere pre-soak and low deposition rate initial layer in PECVD process.
  Yajing Zhao, Semiconductor Technology Innovation Center (Beijing) Corporation
  Study of UV cure effect on PEALD SiN WER in nonplanar structure
  Tielu Liu, Beijing Superstring Academy of Memory Technology
  Low wet etch rate and high conformality nitride film for 28nm CESL
  Wei Xia, Applied Materials.
  Preparation of Nanotwinned Copper and Its Application in Advanced Packaging
  Xiaoru Liao, Shanghai Skychem Chemical
  Eliminated AL Missing By Thickening Ti Dep In 28HK Metal Gate Process
  Ze Zhang, Shanghai Huali Integrated Circuit Corporation
  Wafer Edge Tiny Defects Improvement for PETEOS Process
  Fangfang Zheng, Applied Materials
  A Study of High Temperature Amorphous Carbon Uniformity Trend Up Mechanism and Improvement
  Delu Yu, Applied Materials
  SAUSG Film Crack Resistance Improvement and Mechanism
  Weifang Jiang, Applied Materials
  A Snapshot Review on Salicide Technology Evolution for CMOS Fabrication from the Perspective of Process Integration
  Yunlong Jia, Beijing NAURA Microelectronics Equipment Co., Ltd
  Density Functional Theory Study on Mechanism for Oxygen Diffusion in Silicon with Hydrogen
  Zongyue Chai, Zhejiang University
  Study of Chamber Idle Effect for PETEOS Application and Process Optimization
  Rongrong Tian, Applied Materials
  Research on improvement of HDPCVD filling problem
  Xie Tao, Shanghai Huali Integrated Circuit Corporation
  Applied Materials® Endura™ System PWS Feature for High W2W Repeatability
  Qijian Deng, Applied Materials
  Optimizing Polysilicon Deposition to Reduce Bump Defects in CMOS Technology
  Ruida Yao, Zhejiang University
  The Optimization of the Gate Polysilicon Deposition Process for Power MOSFETs
  Xuelu Jiao, Zhejiang University
  Superior Performance of Aluminum Contact Planarization for Silicon Carbide Power Devices
  Shuang Li, Applied Materials
  Low Stress TiN in Versa TTN for Hardmask Application
  Yu Lei, Applied Materials
  AMAT XLR W Chamber Developed For BSI CIS Metal Grid Application
  Chongchong Xia,Applied Materials
  New process development for IMD HDP FSG gapfill enhancement
  Peng Zhou, Applied Materials
  Applied Materials® CloverTM Chamber Development For SiCr TFR In Mix Signal IC
  Ling Li, Applied Materials
  The Optimization of Metasurface lenses Fabrication based on Silicon Pillars within the fab's 12-inch production line
  Huiyun Jiang, Zhejiang University
  BPSG process optimization for robust contact loop integration
  Xiong Wei, Applied Materials
  A New Method to Improve BDII inline Performance
  Zhen Duan, Applied Materials
  Plasma Induced Damage (PID) Improvement on HDP USG Process
  Bruce Fan, Lam Research
  Pre-Coat Process Optimization to Improve Silicon Nitride Particle Performance
  Yusong Bai, Lam Research
  Optimization of approach for APFx finger defect
  Jingyi Yang, Applied Materials
  Simulation Optimization and Fabrication Verification Study of Ion Implantation in 12-inch CMOS Process
  Tao Gong, Zhejiang University
  Annealing conditions effect on different elements ion implantation
  Jiaxi Liu, Applied Materials
  Silicon-Rich ONO Thickness Prediction Based on Deep Learning
  jinjiang luo, Zhejiang University
  High Performance of Advanced Al PVD for Power Device Metallization
  Xiaobo Li, Applied Materials
  New Approach of Pre-Clean Process for CuBS Applicationg
  Dongdong Wei, Applied Materials
  HDPCVD Plasma-Induced Damage Mechanism and Solution
  Chao Zheng, Applied Materials
  V-Shaped Dislocation Prevention by Selective SiGe Epitaxy Process Tuning
  CunZhe He, Semiconductor Manufacturing North China
  Thick PETEOS Film Process Optimizing for Particles Performance Improvement
  Songyuan Tang, Appiled Materials
  Enhancement of adhesion properties of SiO2 film by gas atmosphere pre-soak and low deposition rate initial layer in PECVD process
  Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation
  High Stress Oxide with PE-Silane
  Shuo Cao, Applied Materials
  Impulse PVD Solutions for Dielectric Films Deposition
  Zhen Chen, Applied Materials
  A enhanced PVD TiN process introduction for better gap fill capability and barrier property
  Rui Shao, Applied Materialsy
  HDPCVD Metal Contamination Reduction Strategy for CIS Industry
  Congcong Zhao, Applied Materials
  Good DIT and Gate Leakage Tunability for Gate Loop Process at Integrated Centura® Radiance® and DPN3® Chamber
  Eira Yang, Applied Materials
  Magic Oxygen Control in Silicon Wafers through High Temperature Annealing
  Lynn Ji, Applied Materials
  RTO WtW Thickness Control and Shift Prevention against Implant Dopant Outgassing
  Jiaping Shen, Applied Materials
  Vulcan® Peak Temperature Matching of Spike Process by T-peak Offset
  Heping Du, Applied Materials
  High Aspect Ratio CIS DTI Oxide with Remote Plasma Oxidation
  Jie Zuo, Applied Materials
  Conformal Oxide Growth Improvement on STI liner With RadOx Process
  Yongchun Xuan, Applied Materials
  Applied Materials® High Deposit Rate Cu Chamber for IGBT front-side Metal
  Jian Hua, Applied Materials
  Enhancing Thermal Uniformity in Dynamic Surface Anneal Process using the New Tuning Function
  Wenfan Yang, Applied Materials
  How Plasma Flood Gun Affect Beamline Ion Implant Process
  Shasha Wang, Applied Materials
  A quick post-PM recovery procedure for high-pressure silicon epitaxial process on reduced pressure epitaxy chamber
  Meng Li, Applied Materials
  SFQR Improvement in ATM EPI
  Peng Qin, Applied Materials
  The Study of Oxidation in The Atomic Layer Deposited WCxNy Film
  Rui Ma, Advanced Micro-Fabrication Equipment Company Inc.