Symposium Chair: Dr. Xiaoping Shi, NAURA, China
** | to designate keynote talk - 30 min |
* | to designate invite talk - 25 min |
to designate regular talk - 15 min |
Monday, March 24, 2025 Shanghai International Convention Center
Meeting Room: TBD
Session I: Device Integration
Session Chair: Shi Xiaoping/Zhao Chao
**13:00-13:30 | Diamond Based Heterjunction Devices: The Future of Diamond Electronics | |
Haitao Ye, University of Leicester, UK |
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**13:30-14:00 | Process and Outlook in GaN Devices and Its System Implementation | |
Hongyu Yu, Southen University of Science & Technology | ||
*14:00-14:25 | Process Solution for Multiple Vt Engineering Beyond 3nm Technology Node | |
Xiaona Zhu, Fudan University | ||
*14:25-14:50 | Innovative Pathways: Exploring New Frontiers with Established Chip Manufacturing Techniques | |
Yunlong Li, Zhejiang University | ||
*14:50-15:15 | Synthesis and Optical Properties of Two-Dimensional Materials and Their Applications in Optoelectronics | |
Chunxiao Cong, Fudan University | ||
15:15-15:30 | Study of Integrating Low Dielectric Films into MOSFET Process | |
Miao Zhang, NAURA Technology Group Co., Ltd. | ||
15:30-15:45 | Effect of High Temperature Furnace Anneal to Element Diffusion in SiO2-Si3N4 Stacks | |
Huimin Ren, Beijing Superstring Academy of Memory Technology | ||
15:45-16:00 | Coffee Break | |
16:00-17:55 | Poster Session | |
Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room: TBD
Session II: Memory Technology
Session Chair: Jv Jianhua/ Gu Xun
**08:30-09:00 | Enabling Material and Process Technology Capabilities for Emerging Memory Innovation in the AI Era | |
Jerry Chen, Zhejiang Jingshen M&E Co., Ltd. | ||
*09:00-09:25 | IGZO 2T0C 3D DRAM | |
Di Geng, Institute of Microelectronics, Chinese Academy of Sciences | ||
09:25-09:40 | Hydrogen-Free IBD IGZO Thin Films with Outstanding Thermal Stability and Improved Step Coverage | |
Zichao Li, Jiangsy Leuven Instruments Co., Ltd. | ||
09:40-09:55 | Investigation of Performance Optimization in Bottom-Gate a-IGZO Thin-Film Transistors with Varying Thicknesses of PECVD-SiO2 Gate Dielectric | |
Longge Mao, Institute of Microelectronics, Chinese Academy of Sciences | ||
09:55-10:10 | Selective Reflector Assisted Thermal Budget Decrease | |
Jichu Zhang, NAURA Technology Group Co., Ltd. | ||
10:10-10:25 | Coffee Break | |
Session III: FEOL Development
Session Chair: Gu/Jv Jianhua
**10:25-10:55 | Implant Applications and Products to Enable Advanced Power Device Scaling and Revolution |
David(Wei) Zou, Applied Materials | |
*10:55-11:20 | TBD |
Yukihiro Shimogaki, Tokyo Univeristy | |
*11:20-11:45 | Inline Non-contacting Measurement of Effective Work Function |
Zheng Zou, GHS Semiconductor Co., Ltd. | |
11:45-12:00 | Gapfill improvement with Helium/Argon sputter gas of HDP FSG in Power device |
Zibo Xue, Lam Research | |
12:00-12:15 | Reduction of Wafer Backside Aluminum Contamination for HARP STI Process |
Zhuo Xiong, Applied Materials | |
12:15-13:30 | Lunch Break |
Session IV: BEOL Development
Session Chair: Nie Jiaxiang/Wang Chenyu
*13:30-13:55 | Material and Process Advances in Extending BEOL Cu Metallization and Beyond |
George Wu, GHS Semiconductor Co., Ltd. | |
*13:55-14:20 | Interconnect Technology Evolution to Enhance Device Performance |
Hongxiu Peng, Anji Microelectronics | |
*14:20-14:45 | The Challenges and Solutions of Damascus Copper Process |
Zhaoqin(Jimmy) Zeng, Shanghai Huali Integrated Circuit Corporation | |
*14:45-15:10 | Basic Principle and Recent Tango of Reactive Sputter Process |
Qintong Zhang, NAURA Technology Group Co., Ltd. | |
15:10-15:25 | Barrier and Seed Deposition Solution for Production of High Aspect-Ratio Through-Silicon Vias (TSV) Integrations |
Changzhou Wang, Shanghai BETONE Technology | |
15:25-15:40 | Evolution Mechanism of Copper Grains In Advanced Interconnect Processes |
Yinuo Jin, ACM Research(Shangahi), Inc, Tsinghua University | |
15:40-15:55 | Coffee Break |
Session V: Process development
Session Chair: Wang Chenyu/Nie Jiaxiang
*15:55-16:20 | A structural perspective of ALD precursors' physical and chemical properties |
Xiabing Lou, Origin Demosition Materials Co., Ltd. | |
*16:20-16:45 | PVD-related |
Xinfeng Zhang, Semiconshop | |
16:45-17:00 | Optimization of The Synthetic Process Of Bis(Diethylamino)Silane Based on Response Surface Methodology |
Zhenjun Yuan, Chian Silicon Corporation Ltd. | |
17:00-17:15 | Process Modeling and Uniformity Optimization in Low-temperature Si/SiGe Epitaxy |
Yanlin Mao, STR Software Technology Co., Ltd. | |
17:15-17:30 | Enhancing Process Stability of AlN Thin Films through Pre-Deposition in Chamber and Optical Emission Spectroscopy Assisted by Big Data Analysis |
Yushin Chen, National Central University | |
17:30-17:45 | The application of an almost forgotten theory to explain the leakage current mechanism in state-of-the-art high-k DRAM Capacitors |
Wai Shing Lau, Nanyang Technological University | |
17:45-18:00 | A new theory of high-k electrode material versus low-k electrode material for high-k metal-insulator-metal capacitors |
Wai Shing Lau, Nanyang Technological University | |
Poster Session: | |
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Effect of Sputtering Paraments on the Surface Morphology and Electrical Properties of Thin Film Resistors |
Lei Zhang, Zhejiang University | |
Effect and Optimization of Ge Pre-Amorphous Implantation on Nickel Silicide | |
Weitong Zhang, Zhejiang University | |
Dry Etching of Reduced Thermal Budget Borophosphosilicate Glass (BPSG) using Furnace Anneal: the effect of phosphorus and boron concentration | |
Dingting Han, Beijing Superstring Academy of Memory Technology | |
Dielectric NDC Film Bonding Strength Improvement | |
Junli Li, Lam Research | |
Enhancement of adhesion properties of SiO2 film by gas atmosphere pre-soak and low deposition rate initial layer in PECVD process. | |
Yajing Zhao, Semiconductor Technology Innovation Center (Beijing) Corporation | |
Study of UV cure effect on PEALD SiN WER in nonplanar structure | |
Tielu Liu, Beijing Superstring Academy of Memory Technology | |
Low wet etch rate and high conformality nitride film for 28nm CESL | |
Wei Xia, Applied Materials. | |
Preparation of Nanotwinned Copper and Its Application in Advanced Packaging | |
Xiaoru Liao, Shanghai Skychem Chemical | |
Eliminated AL Missing By Thickening Ti Dep In 28HK Metal Gate Process | |
Ze Zhang, Shanghai Huali Integrated Circuit Corporation | |
Wafer Edge Tiny Defects Improvement for PETEOS Process | |
Fangfang Zheng, Applied Materials | |
A Study of High Temperature Amorphous Carbon Uniformity Trend Up Mechanism and Improvement | |
Delu Yu, Applied Materials | |
SAUSG Film Crack Resistance Improvement and Mechanism | |
Weifang Jiang, Applied Materials | |
A Snapshot Review on Salicide Technology Evolution for CMOS Fabrication from the Perspective of Process Integration | |
Yunlong Jia, Beijing NAURA Microelectronics Equipment Co., Ltd | |
Density Functional Theory Study on Mechanism for Oxygen Diffusion in Silicon with Hydrogen | |
Zongyue Chai, Zhejiang University | |
Study of Chamber Idle Effect for PETEOS Application and Process Optimization | |
Rongrong Tian, Applied Materials | |
Research on improvement of HDPCVD filling problem | |
Xie Tao, Shanghai Huali Integrated Circuit Corporation | |
Applied Materials® Endura™ System PWS Feature for High W2W Repeatability | |
Qijian Deng, Applied Materials | |
Optimizing Polysilicon Deposition to Reduce Bump Defects in CMOS Technology | |
Ruida Yao, Zhejiang University | |
The Optimization of the Gate Polysilicon Deposition Process for Power MOSFETs | |
Xuelu Jiao, Zhejiang University | |
Superior Performance of Aluminum Contact Planarization for Silicon Carbide Power Devices | |
Shuang Li, Applied Materials | |
Low Stress TiN in Versa TTN for Hardmask Application | |
Yu Lei, Applied Materials | |
AMAT XLR W Chamber Developed For BSI CIS Metal Grid Application | |
Chongchong Xia,Applied Materials | |
New process development for IMD HDP FSG gapfill enhancement | |
Peng Zhou, Applied Materials | |
Applied Materials® CloverTM Chamber Development For SiCr TFR In Mix Signal IC | |
Ling Li, Applied Materials | |
The Optimization of Metasurface lenses Fabrication based on Silicon Pillars within the fab's 12-inch production line | |
Huiyun Jiang, Zhejiang University | |
BPSG process optimization for robust contact loop integration | |
Xiong Wei, Applied Materials | |
A New Method to Improve BDII inline Performance | |
Zhen Duan, Applied Materials | |
Plasma Induced Damage (PID) Improvement on HDP USG Process | |
Bruce Fan, Lam Research | |
Pre-Coat Process Optimization to Improve Silicon Nitride Particle Performance | |
Yusong Bai, Lam Research | |
Optimization of approach for APFx finger defect | |
Jingyi Yang, Applied Materials | |
Simulation Optimization and Fabrication Verification Study of Ion Implantation in 12-inch CMOS Process | |
Tao Gong, Zhejiang University | |
Annealing conditions effect on different elements ion implantation | |
Jiaxi Liu, Applied Materials | |
Silicon-Rich ONO Thickness Prediction Based on Deep Learning | |
jinjiang luo, Zhejiang University | |
High Performance of Advanced Al PVD for Power Device Metallization | |
Xiaobo Li, Applied Materials | |
New Approach of Pre-Clean Process for CuBS Applicationg | |
Dongdong Wei, Applied Materials | |
HDPCVD Plasma-Induced Damage Mechanism and Solution | |
Chao Zheng, Applied Materials | |
V-Shaped Dislocation Prevention by Selective SiGe Epitaxy Process Tuning | |
CunZhe He, Semiconductor Manufacturing North China | |
Thick PETEOS Film Process Optimizing for Particles Performance Improvement | |
Songyuan Tang, Appiled Materials | |
Enhancement of adhesion properties of SiO2 film by gas atmosphere pre-soak and low deposition rate initial layer in PECVD process | |
Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation | |
High Stress Oxide with PE-Silane | |
Shuo Cao, Applied Materials | |
Impulse PVD Solutions for Dielectric Films Deposition | |
Zhen Chen, Applied Materials | |
A enhanced PVD TiN process introduction for better gap fill capability and barrier property | |
Rui Shao, Applied Materialsy | |
HDPCVD Metal Contamination Reduction Strategy for CIS Industry | |
Congcong Zhao, Applied Materials | |
Good DIT and Gate Leakage Tunability for Gate Loop Process at Integrated Centura® Radiance® and DPN3® Chamber | |
Eira Yang, Applied Materials | |
Magic Oxygen Control in Silicon Wafers through High Temperature Annealing | |
Lynn Ji, Applied Materials | |
RTO WtW Thickness Control and Shift Prevention against Implant Dopant Outgassing | |
Jiaping Shen, Applied Materials | |
Vulcan® Peak Temperature Matching of Spike Process by T-peak Offset | |
Heping Du, Applied Materials | |
High Aspect Ratio CIS DTI Oxide with Remote Plasma Oxidation | |
Jie Zuo, Applied Materials | |
Conformal Oxide Growth Improvement on STI liner With RadOx Process | |
Yongchun Xuan, Applied Materials | |
Applied Materials® High Deposit Rate Cu Chamber for IGBT front-side Metal | |
Jian Hua, Applied Materials | |
Enhancing Thermal Uniformity in Dynamic Surface Anneal Process using the New Tuning Function | |
Wenfan Yang, Applied Materials | |
How Plasma Flood Gun Affect Beamline Ion Implant Process | |
Shasha Wang, Applied Materials | |
A quick post-PM recovery procedure for high-pressure silicon epitaxial process on reduced pressure epitaxy chamber | |
Meng Li, Applied Materials | |
SFQR Improvement in ATM EPI | |
Peng Qin, Applied Materials | |
The Study of Oxidation in The Atomic Layer Deposited WCxNy Film | |
Rui Ma, Advanced Micro-Fabrication Equipment Company Inc. |