Symposium Chair: Dr. Xiaoping Shi, NAURA Technology Group Co., Ltd.
| ** | to designate keynote talk - 30 min | Sponsored by: |
|
| * | to designate invite talk - 25 min | ||
| to designate regular talk - 15 min |
Monday, March 24, 2025 Shanghai International Convention Center
Meeting Room: 5th Floor Yellow River Hall
Session I: Device Integration
Session Chair: Xiaoping Shi / Chao Zhao
| **13:00-13:30 | Diamond Based Heterjunction Devices: The Future of Diamond Electronics | |
| Haitao Ye, University of Leicester |
|
|
| **13:30-14:00 | Progress and outlook in GaN devices and its system implementation | |
| Hongyu Yu, Southen University of Science & Technology | ||
| *14:00-14:25 | Process Solution for Multiple Vt Engineering Beyond 3nm Technology Node | |
| Xiaona Zhu, Fudan University | ||
| *14:25-14:50 | Innovative Pathways: Exploring New Frontiers with Established Chip Manufacturing Techniques | |
| Yunlong Li, Zhejiang University | ||
| *14:50-15:15 | Synthesis and Optical Properties of Two-Dimensional Materials and Their Applications in Optoelectronics | |
| Chunxiao Cong, Fudan University | ||
| 15:15-15:30 | Study of Integrating Low Dielectric Films into MOSFET Process | |
| Miao Zhang, NAURA Technology Group Co., Ltd. | ||
| 15:45-17:55 | Poster Session | |
Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room: 5th Floor Yellow River Hall
Session II: Memory Technology
Session Chair: Jianhua Ju / Xun Gu
| **08:30-09:00 | Enabling Material and Process Technology Capabilities for Emerging Memory Innovation in the AI Era | |
| Jerry Chen, Zhejiang Jingshen M&E Co., Ltd. | ||
| *09:00-09:25 | IGZO 2T0C 3D DRAM | |
| Di Geng, Institute of Microelectronics, Chinese Academy of Sciences | ||
| 09:25-09:40 | Hydrogen-Free IBD IGZO Thin Films with Outstanding Thermal Stability and Improved Step Coverage | |
| Zichao Li, Jiangsu Leuven Instruments Co. Ltd. | ||
| 09:40-09:55 | Investigation of Performance Optimization in Bottom-Gate a-IGZO Thin-Film Transistors with Varying Thicknesses of PECVD-SiO2 Gate Dielectric | |
| Longge Mao, Institute of Microelectronics, Chinese Academy of Sciences | ||
| 09:55-10:10 | Selective Reflector Assisted Thermal Budget Decrease | |
| Jichu Zhang, NAURA Technology Group Co., Ltd. | ||
| 10:10-10:25 | Coffee Break | |
Session III: FEOL Development
Session Chair: Xun Gu / Jianhua Ju
| **10:25-10:55 | Implant Applications and Products to Enable Advanced Power Device Scaling and Revolution |
| David(Wei) Zou, Applied Materials | |
| *10:55-11:20 | Inline Non-contacting Measurement of Effective Work Function |
| Zheng Zou, GHS Semiconductor Co., Ltd. | |
| 11:20-11:35 | Gapfill Improvement with Helium/Argon Sputter Gas of HDP FSG in Power Device |
| Zibo Xue, Lam Research | |
| 11:35-11:50 | Plasma Induced Damage (PID) Improvement on HDP USG Process |
| Bruce Fan, Lam Research | |
| 11:50-13:30 | Lunch Break |
Session IV: BEOL Development
Session Chair: Jiaxiang Nie / Chenyu Wang
| *13:30-13:55 | Material and Process Advances in Extending BEOL Cu Metallization and Beyond |
| George Wu, GHS Semiconductor Co., Ltd. | |
| *13:55-14:20 | Applications of Untra-high Vacuum PVD through Leading-edge Pure Ion Coating(PIC) Technology |
| Hongxiu Peng, Anji Microelectronics | |
| *14:20-14:45 | Effect of High Temperature Furnace Anneal to Element Diffusion in SiO2-Si3N4 Stacks |
| Xinfeng Zhang, Semiconshop | |
| *14:45-15:10 | Basic Principle and Recent Tango of Reactive Sputter Process |
| Qintong Zhang, NAURA Technology Group Co., Ltd. | |
| 15:10-15:25 | Barrier and Seed Deposition Solution for Production of High Aspect-Ratio Through-Silicon Vias (TSV) Integrations |
| Changzhou Wang, Shanghai BETONE Technology Co. Ltd. | |
| 15:25-15:40 | Evolution Mechanism of Copper Grains In Advanced Interconnect Processes |
| Yinuo Jin, ACM Research, Inc | |
| 15:40-15:55 | Coffee Break |
Session V: Process development
Session Chair: Chenyu Wang / Jiaxiang Nie
| *15:55-16:20 | A Structural Perspective of ALD Precursors' Physical and Chemical Properties |
| Xiabing Lou, Origin Demosition Materials Co., Ltd. | |
| 16:20-16:35 | Effect of High Temperature Furnace Anneal to Element Diffusion in SiO2-Si3N4 Stacks |
| Huimin Ren, Beijing Superstring Academy of Memory Technology | |
| 16:35-16:50 | Optimization of The Synthetic Process Of Bis(Diethylamino)Silane Based on Response Surface Methodology |
| Zhenjun Yuan, China Silicon Corporation Ltd. | |
| 16:50-17:05 | Process Modeling and Uniformity Optimization in Low-temperature Si/SiGe Epitaxy |
| Yanlin Mao, STR Software Technology Co., Ltd. | |
| 17:05-17:20 | Enhancing Process Stability of AlN Thin Films through Pre-Deposition in Chamber and Optical Emission Spectroscopy Assisted by Big Data Analysis |
| Yushin Chen, National Central University | |
| 17:20-17:35 | The Application of an Almost Forgotten Theory to Explain the Leakage Current Mechanism in State-of-the-Art High-K DRAM MIM Capacitors |
| Wai Shing Lau, Nanyang Technological University | |
| 17:35-17:50 | A New Theory of High-k Electrode Material Versus Low-k Electrode Material for High-k Metal-Insulator-Metal Capacitors |
| Wai Shing Lau, Nanyang Technological University | |
| Poster Session: | |
|
|
Effect of Sputtering Paraments on the Surface Morphology and Electrical Properties of Thin Film Resistors |
| Lei Zhang, Zhejiang University | |
| Effect and Optimization of Ge Pre-Amorphous Implantation on Nickel Silicide | |
| Weitong Zhang, Zhejiang University | |
| Dry Etching of Reduced Thermal Budget Borophosphosilicate Glass (BPSG) using Furnace Anneal: the Effect of Phosphorus and Boron Concentration | |
| Dingting Han, Beijing Superstring Academy of Memory Technology | |
| Dielectric NDC Film Bonding Strength Improvement | |
| Junli Li, Lam Research | |
| Enhancement of Adhesion Properties of SiO2 Film by Gas Atmosphere Pre-soak and Low Deposition Rate Initial Layer in PECVD Process. | |
| Yajing Zhao, Semiconductor Technology Innovation Center (Beijing) Corporation | |
| Study of UV Cure Effect on PEALD SiNx WER in 3D Architecture | |
| Tielu Liu, Beijing Superstring Academy of Memory Technology | |
| Low Wet Etch Rate and High Conformality Nitride Film for 28nm CESL | |
| Wei Xia, Applied Materials. | |
| Preparation of Nanotwinned Copper and Its Application in Advanced Packaging | |
| Xiaoru Liao, Shanghai Skychem Chemical | |
| Eliminated AL Missing By Thickening Ti Dep In 28HK Metal Gate Process | |
| Ze Zhang, Shanghai Huali Integrated Circuit Corporation | |
| Wafer Edge Tiny Defects Improvement for PETEOS Process | |
| Fangfang Zheng, Applied Materials | |
| A Study of High Temperature Amorphous Carbon Uniformity Trend Up Mechanism and Improvement | |
| Delu Yu, Applied Materials | |
| SAUSG Film Crack Resistance Improvement and Mechanism | |
| Weifang Jiang, Applied Materials | |
| A Snapshot Review on Salicide Technology Evolution for CMOS Fabrication from the Perspective of Process Integration | |
| Yunlong Jia, Beijing NAURA Microelectronics Equipment Co., Ltd | |
| Density Functional Theory Study on Mechanism for Oxygen Diffusion in Silicon with Hydrogen | |
| Zongyue Chai, Zhejiang University | |
| Study of Chamber Idle Effect for PETEOS Application and Process Optimization | |
| Rongrong Tian, Applied Materials | |
| Research on Improvement of HDPCVD Filling Problem | |
| Xie Tao, Shanghai Huali Integrated Circuit Corporation | |
| Applied Materials® Endura™ System PWS Feature for High W2W Repeatability | |
| Qijian Deng, Applied Materials | |
| Optimizing Polysilicon Deposition to Reduce Bump Defects in CMOS Technology | |
| Ruida Yao, Zhejiang University | |
| The Optimization of the Gate Polysilicon Deposition Process for Power MOSFETs | |
| Xuelu Jiao, Zhejiang University | |
| Superior Performance of Aluminum Contact Planarization for Silicon Carbide Power Devices | |
| Shuang Li, Applied Materials | |
| Low Stress TiN in Versa TTN for Hardmask Application | |
| Yu Lei, Applied Materials | |
| AMAT XLR W Chamber Developed For BSI CIS Metal Grid Application | |
| Chongchong Xia, Applied Materials | |
| New Process Delopment for IMD HDP FSG Gapfill Enhancement | |
| Peng Zhou, Applied Materials | |
| Applied Materials® CloverTM Chamber Development For SiCr TFR In Mix Signal IC | |
| Ling Li, Applied Materials | |
| The Optimization of Metasurface lenses Fabrication based on Silicon Pillars within the fab's 12-inch Production Line | |
| Huiyun Jiang, Zhejiang University | |
| BPSG Process Optimization for Robust Contact Loop Integration | |
| Xiong Wei, Applied Materials | |
| A New Method to Improve BDII Inline Performance | |
| Zhen Duan, Applied Materials | |
| Optimization of Approach for APFx Finger Defect | |
| Jingyi Yang, Applied Materials | |
| Simulation Optimization and Fabrication Verification Study of Ion Implantation in 12-inch CMOS Process | |
| Tao Gong, Zhejiang University | |
| Annealing Conditions Effect on Different Elements Ion Implantation | |
| Jiaxi Liu, Applied Materials | |
| Silicon-Rich ONO Thickness Prediction Based on Deep Learning | |
| jinjiang luo, Zhejiang University | |
| High Performance of Advanced Al PVD for Power Device Metallization | |
| Xiaobo Li, Applied Materials | |
| New Approach of Pre-Clean Process for CuBS Application | |
| Dongdong Wei, Applied Materials | |
| HDPCVD Plasma-Induced Damage Mechanism and Solution | |
| Chao Zheng, Applied Materials | |
| V-Shaped Dislocation Prevention by Selective SiGe Epitaxy Process Tuning | |
| CunZhe He, Semiconductor Manufacturing North China | |
| Thick PETEOS Film Process Optimizing for Particles Performance Improvement | |
| Songyuan Tang, Appiled Materials | |
| Enhancement of Adhesion Properties of SiO2 Film by Gas Atmosphere Pre-soak and Low Deposition Rate Initial Layer in PECVD Process | |
| Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation | |
| High Stress Oxide with PE-Silane | |
| Shuo Cao, Applied Materials | |
| Impulse PVD Solutions for Dielectric Films Deposition | |
| Zhen Chen, Applied Materials | |
| A Enhanced PVD TiN Process Introduction for Better Gap Fill Capability and Barrier Property | |
| Rui Shao, Applied Materials | |
| HDPCVD Metal Contamination Reduction Strategy for CIS Industry | |
| Congcong Zhao, Applied Materials | |
| Good DIT and Gate Leakage Tunability for Gate Loop Process at Integrated Centura® Radiance® and DPN3® Chamber | |
| Eira Yang, Applied Materials | |
| Magic Oxygen Control in Silicon Wafers through High Temperature Annealing | |
| Lynn Ji, Applied Materials | |
| RTO WtW Thickness Control and Shift Prevention against Implant Dopant Outgassing | |
| Jiaping Shen, Applied Materials | |
| Vulcan® Peak Temperature Matching of Spike Process by T-peak Offset | |
| Heping Du, Applied Materials | |
| High Aspect Ratio CIS DTI Oxide with Remote Plasma Oxidation | |
| Jie Zuo, Applied Materials | |
| Oxidation Balanced Growth Improvement on Gate & STI liner With ISSG Process | |
| Yongchun Xuan, Applied Materials | |
| Applied Materials® High Deposit Rate Cu Chamber for IGBT front-side Metal | |
| Jian Hua, Applied Materials | |
| Enhancing Thermal Uniformity in Dynamic Surface Anneal Process using the New Tuning Function | |
| Wenfan Yang, Applied Materials | |
| How Plasma Flood Gun Affect Beamline Ion Implant Process | |
| Shasha Wang, Applied Materials | |
| A Quick Post-PM Recovery Procedure for High-Pressure Silicon Epitaxial Process on Reduced Pressure Epitaxy Chamber | |
| Meng Li, Applied Materials | |
| SFQR Improvement in ATM EPI | |
| Peng Qin, Applied Materials | |
| The Study of Oxidation in The Atomic Layer Deposited WCxNy Film | |
| Rui Ma, Advanced Micro-Fabrication Equipment Company Inc. | |
| The Challenges and Solutions of Damascus Copper Process | |
| Zhaoqin(Jimmy) Zeng, Huali Microelectronics | |
| Reduction of Wafer Backside Aluminum Contamination for HARP STI Process | |
| Zhuo Xiong, Applied Materials | |