Symposium Chair: Dr. Xiaoping Shi, NAURA, China
| * | to designate invite talk - 25 min | Sponsored by: |
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| to designate regular talk - 20 min |
Sunday, March 17, 2024 Shanghai International Convention Center
Meeting Room: 5th Floor Yangtze River Hall
Session I: Device Integration - 1
Session Chair: Xiaoping Shi
| 13:30-13:35 | Opening Remarks |
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| *13:35-14:00 | Tailoring the deposition and composition of advanced oxide and SiCN films to deliver the highest bonding energy for fusion and hybrid bonding applications |
| Zongbin Wang, Applied Materials | |
| *14:00-14:25 | A Review in III-Nitride Nanocolumns Growth and Applications |
| Enrique Calleja, Universidad Politécnica de Madrid | |
| *14:25-14:50 | Advances and Reliability Challenges in Heterogeneous Integration in Chiplet Era: from Solder to Copper to Optical Interconnects |
| Zhuo-Jie Wu, HFC Semiconductor | |
| 14:50-15:10 | Optimization of Deep Trench Isolation on 0.18μm SOI BCD Technology for Automotive Application |
| Siti Aisah Mohd Salleh, X-FAB Sarawak Sdn. Bhd. | |
| 15:10-15:25 | Coffee Break |
Session II: Device Integration - 2
Session Chair: Chao Zhao
| *15:25-15:50 | The Progress and Challenges of Large Scale Integration of Silicon Photonics |
| Adam Lewis, CUMEC | |
| *15:50-16:15 | Do we need 300mm GaN-on-Si? |
| Kai Cheng, Enkris Semiconductor,Inc | |
| *16:15-16:40 | Si based GaN HEMTs/System R&D and the perspective of the technological commercialization |
| Hongyu Yu, Southen University of Science & Technology | |
Monday, March 18, 2024 Shanghai International Convention Center
Meeting Room: 5th Floor Yangtze River Hall
Session III: ALD Process Development - 1
Session Chair: Jianhua Jv
| *08:30-08:55 | Thin Film Atomic Layer Deposition and Selective Processes |
| Rong Chen, Huazhong University of Science and Technology | |
| *08:55-09:20 | A Chemistry Perspective of ALD Precursors' Properties |
| Xiabing Lou, Origin Deposition Materials Co., Ltd. | |
| 09:20-09:40 | Characterizing low-k (SiCON) film with different element composition |
| Wenxu Duan, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| 09:40-10:00 | ALD of Dielectric Materials: Analysis of Equipment Design and Process Performance Using Detailed Modeling |
| Yanlin Mao, Suzhou STR Software Technology Co., Ltd. | |
| 10:00-10:20 | Coffee Break |
Session IV: Memory Technology
Session Chair: Jiaxiang Nie
| *10:20-10:45 | Design Technology Co-optimization for Yield and Reliabulity Enhancement of RRAM Technology Platform |
| Zhichao Lv, Reliance Memory | |
| *10:45-11:10 | The effect of stress on HfO2-based ferroelectric thin films |
| Feng Luo, Nankai University | |
| *11:10-11:35 | SiGe/Si Heteroepitaxial Epitaxy and Characterization for CMOS and Vertically Stacked DRAM |
| Guilei Wang, Beijing Superstring Academy of Memory Technology | |
| *11:35-12:00 | Modeling of Endurance Degradation of Anti-ferroelectric Hf1-xZrxO2 Capacitor |
| Yaru Ding, Zhejiang University | |
| 12:00-13:30 | Lunch Break |
Session V: Device Integration - 3
Session Chair: Chenyu Wang
| 13:30-13:50 | The Formation of Air-gaps Isolation Used in Metal/Dielectric Stacking |
| Weidu Qin, Beijing Superstring Academy of Memory Technology | |
| 13:50-14:10 | SMT OPTIMIZATION OF PMOSFET BASED ON MULTI-DEPOSITION AND IN-SITU N2 PLASMA TREATMENT |
| Longyue Zheng, Zhejiang University | |
| 14:10-14:30 | FEA of Thermo-mechanically Induced Crack in IMD |
| Colin Chan, X-FAB Sarawak Sdn. Bhd. | |
| 14:30-14:50 | Backside Deposition of LTO/Poly-Si Sealing Layer by One-step PECVD and Post Annealing |
| Junxian Gao, Lam Research | |
| 14:50-15:10 | Copper Diffusion Improvement by Optimizing TaN and Integration in Power Device |
| Xiangyu Zhou, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| 15:10-15:30 | A machine learning study to obtain an optimal processing pulsed frequency on reactive pulsed DC sputtering of aluminum nitride films |
| Xue-Li Tseng, National Central University | |
| 15:30-15:45 | Coffee Break |
Session VI: Process Development - 1
Session Chair: Xun Gu
| 15:45-16:05 | Full Wafer Combinatorial Deposition with In-situ XPS/UPS Characterizations |
| Weimin Li, Shanghai Institute of IC Materials Co., Ltd. | |
| 16:05-16:25 | Tungsten Surface Roughness Improvement by Single Deposition Process |
| Zhengning Gao, Lam Research | |
| 16:25-16:45 | The Effects of Different Silicon Oxide Substrates on Amorphous Silicon Thin-Film |
| Zhengdao Liu, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| 16:45-17:05 | A Novel Thin Film Deposition Method by IBD for Asymmetrical Patterns |
| Zichao Li, Leuven Instruments | |
| 17:05-17:25 | Potential confusion in the analysis of the current-voltage characteristics of high-k dielectric on lightly doped p-type silicon MIS capacitors |
| Wai Shing Lau, Nanyang Technological University | |
| 17:25-17:45 | The secret of the leakage current mechanism in some historical device-quality high-k metal-insulator-metal capacitors |
| Wai Shing Lau, Nanyang Technological University | |
| Poster Session: | |
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Optimizing Si/SiO2 Interface of Planar LDMOS Field-Effect Transistors for Medium-Voltage Power Applications |
| Jiaoyang Chen, Huahong Semiconductor (Wuxi) Limited | |
| Study of HDPCVD Charge Improvement for ILD Process | |
| Jie Yang, Lam Researchc | |
| IMPROVED PERFORMANCE OF PMOS BY OPTIMIZING THE EPITAXIAL MORPHOLOGY | |
| Tao Wang, Shanghai Huali Integrated Circuit Corporation | |
| Exploring the Effect of Gate Oxide Process on the Electrical Performance of the CMOS Device | |
| Yongkang Hu, University of Science and Technology of China | |
| Improving Gate Oxide Uniformity Using Wet-Dry Oxidation | |
| Lin Tang, School of Micro-Nano Electronics, Zhejiang University | |
| NiSix Anneal on Producer Pyra | |
| Heping Du, Applied Materials | |
| DRAM Bit line Evaluation by using Single Precursor Activate Radical Chemistry (SPARC) Process | |
| Guanfeng Lu, Lam Research | |
| W CVD Process Extendibility Development for Challenging Gap Fill | |
| Shao Rui, Applied Materials | |
| NBTI Improvement Through Gate Process Optimization | |
| Ying Ma, Applied Material China | |
| Excellent Performance of PC XT in Soft-Clean | |
| Xingluan Long, Applied Materials | |
| Amorphous Silicon Bump Defect Mechanism Analysis and Improvement Strategy | |
| Shudi Min, Applied Materials | |
| Approach of Customized Thickness Profile and Superior Uniformity on SACVD | |
| Xiang Li, Applied Materials | |
| HARP STI Wafer Sliding and Pre-heat Improvement by Recipe Optimization | |
| Yiyu Zhang, Applied Materials | |
| HARP STI Range Improvement for 28nm HKMG Double Patterning Process | |
| Zhaojie Sun, Applied Materials | |
| High Bow wafer Handling Approach on Producer PECVD | |
| Bin Wang, Applied Materials | |
| Low Dep Rate Oxide Process Development for Glue Layer | |
| Congcong Zhao, Applied materials | |
| Excellent Stability Control for High Throughput DARC Process | |
| Chao Zheng, Applied Materials | |
| N-Dosage Non-Uniformity Tuning in Nitride Incorporated Gate Oxide Process | |
| Eira Yang, Applied Materials | |
| High Productivity of Advanced Al PVD in Al Slab | |
| Xiaogang Su, Applied Materials | |
| SiGe Epitaxy Improved by Si Cap Technology | |
| Tao Wang, Shanghai Huali Integrated Circuit Corporation | |
| Effect of process parameters on microstructure and properties of ITO films by pulsed magnetron sputtering | |
| Yanmeng Chen, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| The Influence of Different Parameters on Capacitive Coupled Magnetron Sputtering Process | |
| Song Yang, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| Effect of process gas pipline on TiN film resistance | |
| Hongwei Geng, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| TiN Infilm Particle Improvement by Bias Field Integration | |
| Xin Wang, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| Tool transfer compatibility improvement for different thin wafer type | |
| Jiaxi Liu, Applied Materials | |