Yuna Cai 蔡圆
Technical Support Manager, Tower Semiconductor

摘要 / Abstract

We report our development of a leading edge 140V bulk-Si RESURF technology and 200V operation voltage SOI technology based on TowerJazz 0.18um power management platform (TS18PM). For the first time in bulk Si, a BVDSS of 180V was achieved in high-side nLDMOS. This innovative technology provides significant competitive features such as low-Ron low-side/high-side LDMOS, bootstrap diodes and floating capabilities. In parallel, we have extended our robust SOI platform with typical BV of 200V, demonstrating further expansion to 200V operation with both nmos and pmos achieving typical BVDSS of 360V.
Both technologies are aimed for Automotive & Industrial applications, as well as fast gate drivers, motor drivers, battery management and many other power applications.