Symposium Chair: Prof. Ru Huang, Southeast University, China
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 17, 2024 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall
Session I: In-memory Computing I
Session Chair: Hao Cai
| *13:30-13:55 | Implementation of Spintronic MRAM Circuits and Systems |
| Hao Cai, Southeast University | |
| *13:55-14:20 | Defect tolerant physics-inspired computing in memristor arrays |
| Can Li, University of Hong Kong | |
| 14:20-14:35 | Multifunctional RRAM Chip with Configurability for Sparsity-aware In-memory Isng Machine |
| Wenshuo Yue, Peking University | |
| 14:35-14:50 | A method of scalable polysilicon resistor by adjusting shielding metal in CMOS process |
| Hunjin Lee, X-FAB | |
| 14:50-15:05 | A 110nm BCD-on-SOI Technology offering Best-In-Class Nonvolatile Memory IP for Automotive Application |
| Boon Jiew Chee, X-FAB Sarawak Sdn. Bhd. | |
| 15:05-15:20 | Coffee Break |
Session II: In-memory Computing II
Session Chair: Xin Si
| *15:20-15:45 | 2D devices and in-sensor computing |
| Feng Miao, Nanjing University | |
| *15:45-16:10 | SRAM based Compute-in-Memory Circuits Design for CNN and Transformers |
| Xin Si, Southeast University | |
| *16:10-16:35 | All-dielectric metasurfaces for vortex generation and Detection |
| Shumin Xiao, Harbin Institute of Technology | |
| 16:35-16:50 | Analog Device Engineering and Enhancement in 0.18um BCD on SOI Technology Platform |
| Poh Ching Sim, X-FAB Sarawak Sdn. Bhd. | |
| 16:50-17:05 | Innovative Test Solution Design and Production Practices for Automotive Based on ADVANTEST 93K |
| Jibao Fan, Advantest (China) Co., Ltd. | |
Monday, March 18, 2024 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall
Session III: Emerging Computing Technologies
Session Chair: Hao Wang
| *08:30-08:55 | 2D Material Devices for Advanced Computing |
| Han Wang, University of Hong Kong | |
| *08:55-09:20 | A Full Spectrum of Computing-In-Memory Technologies |
| Zhong Sun, Peking University | |
| 09:20-09:35 | Inflection Points in CFET Scaling: Impact of DTCO Boosters |
| Dmitry Yakimets, Huawei Technologies R&D Belgium | |
| 09:35-09:50 | Ultrathin TiO2 channel HfLaO FeFET with Low Operation Voltage |
| Xujin Song, Peking University | |
| 09:50-10:05 | Coffee Break |
Session IV: Memory Devices I
Session Chair: Jianshi Tang
| *10:05-10:30 | Enhance Chip Connectivity and Functionality through RRAM-based Monolithic 3D Integration |
| Jianshi Tang, Tsinghua University | |
| *10:30-10:55 | Single Element Switch |
| Min Zhu, Shanghai Institute of Microsystem and Information Technology | |
| 10:55-11:10 | First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HfO2-based ferroelectrics |
| Chenxi Yu, Peking University | |
| 11:10-11:25 | Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform |
| Gang Wang, Hangzhou HFC Semiconductor Corporation | |
| 11:25-13:30 | Lunch Break |
Session V: Emerging Devices
Session Chair: Can Li
| 13:30-13:45 | A Novel Ultralow Voltage Slope Device |
| Pengtao Li, Zhejiang University | |
| 13:45-14:00 | Experimental Investigation of Polarization Switching Speed in Ferroelectric HfO2 for High-Speed and Low-Power Applications |
| Hao Zheng, Peking University | |
| 14:00-14:15 | A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor For Leakage Control And Subthreshold Slope Reduction |
| Yumin Xu, Fudan University | |
| 14:15-14:30 | Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors |
| Pan Zhao, Peking University | |
| 14:30-14:45 | Coffee Break |
Session VI: Memory Devices II
Session Chair: Kechao Tang
| *14:45-15:10 | High endurance field-effect transistor memory based on Hafnium-oxide ferroelectrics |
| Kechao Tang, Peking University | |
| 15:10-15:25 | Interface Treatment of Epitaxial Si FinFET Channel in Replace Metal Gate with Simultaneously Performance Improvement and Leakage Reduction |
| Renjie Jiang, Institute of Microelectronics of the Chinese Academy of Sciences | |
| 15:25-15:40 | Experimental Investigation on the Back Gate Modulation of Extra-Thin Body pMOSFETs |
| Rui Su, Zhejiang University | |
| 15:40-15:55 | Impact Of Thickness Dependent Ferroelectric And Interface Charge Variation On Device-To-Device Variation In Ferroelectric FET |
| Fan Zhang, Xidian University/ IMECAS | |
| Poster Session: | |
| Yield Improvement in 4X Node Technology ETOX NOR-flash by Optimizing Control Gate Related Process and Design | |
| Yihang Du, Huahong Semiconductor (WUXI) Limited | |
| Machine Learning-based Performance Prediction Model Optimization for SOI LDMOS Using Adaptive Small Space Dataset | |
| Jinwen You, Nanjing University of Posts and Telecommunications | |
| HBM Device Test & Repair Solution on T5833 | |
| Xiang Ling, Advantest (China) Co., Ltd. | |
| SUBSTRATE CURRENT IMPROVEMENT AND INVESTIGATION IN LOW VOLTAGE POWER LDMOS WITH A NOVEL DESIGN | |
| Zhaozhao Xu, Huahong Semiconductor (Wuxi) Limited | |
| Short-Loop Method to Shorten Gate Process Characterization Cycle Time | |
| Bing Li, HangZhou HFC Semiconductor Corp. | |
| Enhancement of SRAM Read and Write Noise Margin by Device Performance Adjustment | |
| Ailin Li, Semiconductor Manufacturing North China (Beijing) Corporation (SMNC) | |
| FABRICATION PROCESS IMPROVEMENT OF AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL | |
| Yintong Zhang, Huahong Semiconductor (Wuxi) Limited | |
| STI Gap-Filling Performance Improvement by the Process Integration Optimization in the 4Xnm ETOX Nor Flash | |
| Zhuangzhuang Wang, Hua Hong Semiconductor (Wuxi) Limited | |
| Breakdown Voltage Improvement of LDMOS by CESL Optimization in High-Voltage 90 nm BCD Technology | |
| Ye Tian, Huahong Semiconductor (Wuxi) Limited | |
| Research on the substitution of MIM capacitors and MOM capacitors on power devices | |
| Wenwu Zhu, Huahong Semiconductor(Wuxi) | |
| STUDY ON DNW PERFORMANCE IN 55NM CMOS | |
| HAOQI ZHENG, Semiconductor Manufacturing International Corporation | |
| STUDY ON NIPT SALICIDE WITH VARIOUS PLATINUM PERCENTAGE PERFORMANCE | |
| HAOQI ZHENG, Semiconductor Manufacturing International Corporation | |
| Anomalous Hot carrier injection induced degradation of drain current in HVMOS with STI | |
| Bocheng Zhao, Shanghai University | |
| Study of Improvement for substrate current in High-Voltage NMOS with Shallow Trench Isolation | |
| Bocheng Zhao, Shanghai University | |
| The Effect of Depth, Air Gap Width and Ion Implant on Deep Trench Isolation for BCD Technology | |
| Chen Chen, Huahong Wuxi Semiconductor Manufactory Co., Ltd. | |
| A new method for improving 8V ESD performance | |
| Chuang Wang, Shanghai Huali Microelectronics Corporation | |
| Fabrication of Semi-enclosed Control Gate of Semi-Floating Gate Transistor | |
| Shiling Yang, Shanghai Huali Integrated Circuit Corporation | |
| Threshold Voltage Mismatch Dependence of SRAM Yield Window Simulation | |
| Chun-Hsiung Wang, HFC Semiconductor | |
| Optimization of the 8T SRAM bitcell design | |
| Lu-Ping Wu, HFC Semiconductor | |
| SRAM Device Threshold Voltage Mismatch Investigation and Improvement | |
| Chun-Hsiung Wang, HFC Semiconductor | |
| Effect of lightly doped drain doping on variability for static random-access memory | |
| Qiao Teng, Zhejiang University | |
| Improvement of NLDMOS Performance in Low-Resistivity Substrate for Integration with Discrete Power Devices on One Chip | |
| Yuncong Chen, HuaHong Grace Semiconductor Manufacturing Corporation | |
| A photoelectric memristive devices for Artificial visual perception | |
| Xuemeng Fan, Zhejiang University | |
| Al2O3/AlOx Memristor with Nearly Ideal Synaptic Characteristics | |
| Qian He, Zhejiang University | |
| Two-Dimensional MoS2 Based Memristors For Artificial Neural Network | |
| Hailiang Wang, Zhejiang University | |
| A Novel RRAM-Based TCAM Search Array | |
| Zhen Wang, Zhejiang University | |
| Static leakage failure analysis and improvement for small size SRAM | |
| Minghui Zhu, Shanghai Huali Microelectronics Corporation | |
| The Modeling and optimization of the Polysilicon Gate Line Width Roughness for Improving the Performance of 55nm CMOS devices | |
| Yaoting Wang, Zhejiang University | |
| Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor with Shallow Trench Isolation and Step Oxide Improvement | |
| Zhibo Liu, Huahong Wuxi Semiconductor Manufactory | |
| Virtual Fab Semiconductor Process Modeling Augmented Vertical Gate All Around Complementary FET based 6T SRAM path-finding | |
| Zhaohai Di, Institute of Microelectronics, Chinese Academy of Sciences | |
| Novel Memtransistor-based LIF Neuron with Tunable Ionic Dynamics for Spiking Neural Networks | |
| Zhen Yang, Peking University | |
| Ultra-low operating voltage RRAM devices regulated by nitride insertion layers | |
| Zijian Wang, Zhejiang university | |
| New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric FET | |
| Chang Su, Peking University | |
| IGZO-Ta2O5 Dual-layer CBRRAM: A Low Voltage and High Switching Ratio Storage Solution | |
| Shengpeng Xing, Zhejiang University | |
| The Optimization of the specific on-resistance of the VDMOS on the integrated platform of VDMOS and LDMOS | |
| Xiaoqing Cai, HuaHong Grace Semiconductor Manufacturing Corporation | |
| A STUDY OF PARASITIC CAPACITANCE SIMULATION IN DRAM BY VIRTUAL FABRICATION | |
| Dempsey Deng, Lam Research | |
| Benefits of Applied VSE High Current Implanters for White Pixel Reduction in Image Sensors | |
| Shasha Wang, Applied Materials | |
| Leakage Reduction Evolution With Gate Oxide Scaling | |
| Yongchun Xuan, Applied Materials | |
| Cost Effective Low Temperature Annealing Achieved by Producer Pyra | |
| Yang Liu, Applied Materials | |
| Advanced Ion Implanter with Metal Reduction Kit (MRK) for CIS White Pixel Improvement | |
| Kui Shi, Applied Materials | |
| Device performance (leakage & Rc) improvement by Trident XP CrionTM | |
| Yuhang Jin, Applied Materials | |
| Effective Tuning Knobs for High Current Implant Uniformity Optimization | |
| Jinsong Lin, Applied Materials | |
| Trident N/C co-implant for LDD dopant diffusion control | |
| Zuoliang Han, Applied Materials | |
| Solution-Processed Organic CMOS Inverter Via Contact Modulation | |
| Jiarong Cao, Nanjing University of Posts and Telecommunications | |
| Ultra-Short Channel Polymer Transistors | |
| Zhiqi Xu, Nanjing University of Posts and Telecommunications | |
| Exploring Low-Frequency Noise Behavior in Vertically Structured Organic Schottky Photodiodes | |
| Tingting Ji, Nanjing University of Posts and Telecommunications | |
| Flexible Low-Voltage, Hysteresis-Free Ferroelectric Polymer Transistors | |
| Yao Yu, Nanjing University of Posts and Telecommunications | |
| A comprehensive solution to parse, compare, convert, and compile TST pattern | |
| Weilong Li, Teradyne | |
| A Novel Approach for Doping Two-Dimensional MoS2 Materials: ZnO Polar Interfacial Charge Transfer Method | |
| Lijun Xu, Institute for Microelectronics, Chinese Academy of Science | |
| Calculation Method of Target Erosion in the Planar DC Magnetron Sputtering | |
| Jihua Ding, Beijing NAURA Microelectronics Equipment Co., Ltd. | |