Jin-Ping Ao 敖金平
Professor of Jiangnan University
江南大学，教授

讲师简介 / Speaker Bio

敖金平(博士)，1967年出生，江西人，国家高层次人才计划入选者，国家十三五重点研发计划首席科学家。1989年毕业于武汉大学物理系，获理学学士学位，1992年获电子工业部第十三研究所（现中国电子科技集团公司第十三研究所）半导体物理与器件硕士学位，2000年获吉林大学微电子学与固体电子学博士学位。曾担任电子工业部第十三研究所GaAs超高速集成电路研究室副主任，高级工程师，从事GaAs高速电子器件、集成电路和光电集成电路的研究工作。主持过863计划、预研和国家攻关计划等国家级项目多项。2001年赴日本国立德岛大学工作，任准教授，博士生导师，从事基于宽禁带半导体的光电器件和电子器件的研究工作。主持或参与过日本科学研究辅助金、JST、SCOPE和NEDO等多个项目的研究。与丰田、住友电工、日亚化学等日本著名公司有多年的合作关系。2016年入选国家高层次人才计划，任西安电子科技大学教授，博士生导师。作为项目负责人，完成了国家十三五重点研发计划“战略性先进电子材料”重点专项“GaN基新型电力电子器件关键技术”项目。2022年起加入江南大学物联网工程学院，任教授，博士生导师。在国际学术期刊和国际会议上发表论文300多篇，拥有二十多项发明专利。获电子工业部科技进步奖三等奖、陕西省科学技术奖一等奖。

摘要 / Abstract

Gallium nitride (GaN) is one of the most important wide bandgap semiconductors. It is being used to develop short-wavelength light emitting diodes and laser diodes, as well as being the key material for the next generation high-frequency, high-power and high-temperature electron devices. The AlGaN/GaN heterostructure is also regarded to be a prospective candidate to develop devices and monolithic integrated circuits for the application in millimeter-wave band owing to the high saturation velocity and high sheet carrier concentration of the two-dimensional electron gas layer in this material system. In this talk, GaN Schottky barrier diodes (SBDs) with quasi-vertical structure are specially designed and manufactured for the low-power microwave rectification. Heavily-doped epitaxial layer and patterned Schottky anode are adopted to reduce the GaN SBD series resistance. On-resistance of 1.45 Ω and junction capacitance of 0.87 pF were obtained, respectively, at reverse breakdown voltage of 50 V. Finally, microwave rectifiers are designed and measured. Owing to the outstanding diode performance and microwave circuit design, a measured conversion efficiency of 92% was achieved at the input power of 23 dBm at 905 MHz. At 2.45 GHz, a measured conversion efficiency of 91% was achieved at the input power of 25 dBm. The transmission distance is 3 m under emission power of 39 dBm and receiving power of 12.5 dBm at 905 MHz.