| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 20 min |
Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 3H+3I+3J
Session I: Memory Technology
Session Chair: Xiaoping Shi
| **13:30-14:00 | Magnetron Sputtering System for Magnetic Random Access Memory R&D |
| Weisheng Zhao, Beihang University | |
| **14:00-14:30 | Technical challenges in MRAM fabrication |
| Guchang Han, Zhejiang Hikstor Technology Co., Ltd. | |
| *14:30-14:55 | IGZO TFT for DRAM Cell Application |
| Di Geng, Institute of Microelectronics, Chinese Academy of Sciences | |
| *14:55-15:20 | Cell structure and process integration of a novel 2T0C technology for high-density DRAM application |
| Zhengyong Zhu, Beijing Superstring Academy of Memory Technology | |
| 15:20-15:40 | Pathfinding by different process integration scheme: Advanced DRAM bit-line spacer process integration skim evaluation using virtual |
| Dempsey Deng, Lam Research | |
| 15:40-16:00 | Coffee Break |
Session II: Device Integration
Session Chair: Chao Zhao
| **16:00-16:30 | Integration and Pixelation of Colloidal Quantum Dot layers at Wafer Level for Image Sensor Applications |
| Yunlong Li, Zhejiang University | |
| *16:30-16:55 | Technical Challenges of GAA and R&D Progress at IMECAS |
| Jun Luo, Institute of Microelectronics, Chinese Academy of Sciences | |
| *16:55-17:20 | The Challenges of Carbon Nanotube CMOS IC Technology |
| Jia Si, Peking University | |
| 17:20-17:40 | Carbon Gap Fill in Reversed Self-Aligned Double Patterning |
| Guanfeng Lu, Lam Research | |
Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 3H+3I+3J
Session III: Advanced Process Development
Session Chair: Jianhua Jv
| *8:30-8:55 | Atomic Scale Engineering: An outlook of ALD Applications and Localization |
| Weimin Li, Jiangsu Leadmicro Nano-Equipment Technology Ltd. | |
| *8:55-9:20 | Study of Slip Defects and Improving Methods in Furnace High Temperature Process |
| Yan Sun, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| *9:20-9:45 | Surface Process Development for High-performance GaN HEMTs Fabrication |
| Min Xu, Fudan University | |
| 9:45-10:05 | Improvement of SiGe Relaxation by a New Clamping Film Deposition Process Method |
| Zhiqiang Xiao, Semiconductor Manufacturing North China (Beijing) Corp. | |
| 10:05-10:25 | Coffee Break |
Session IV: Advanced Process Development - 2
Session Chair: Jiaxiang Nie
| *10:25-10:50 | Precursor Selection for ALD High-k Films in Memory Applications |
| Jianheng Li, Hefei ADChem Semi-Tech. Co., Ltd. | |
| *10:50-11:15 | Si and SiGe Heteroepitaxy for Semiconductor Quantum Computing |
| Guilei Wang, Beijing Superstring Academy of Memory Technology | |
| *11:15-11:40 | High Mobility SiGe/Ge Channel Transistors for Advanced CMOS Technology |
| Yi Zhao, East China Normal University | |
| 11:40-12:00 | A Novel Method to Optimize SiGe Profile Using Co-implantation |
| Zhiqiang Xiao, Semiconductor Manufacturing North China (Beijing) Corp. | |
| 12:00-13:30 | Lunch Break |
Session V: Advanced Process Development - 3
Session Chair: Chao Zhao
| 13:30-13:50 | Pulsed DC parameters (Reverse Voltage, Duty Cycle, Pulsed Frequency) on Film quality in reactive sputtered aluminum nitride films |
| Weiyu Zhou, National Central University | |
| 13:50-14:10 | The effect of SiGe SiCoNi pre-clean time on planner logic device performance study |
| Xuechun Zhang, Semiconductor Manufacturing North China (Beijing) Corporation | |
| 14:10-14:30 | Growth and Reduction of Tiny defect in Selective SiGe Epitaxy S/D Devices |
| Cunzhe He, Semiconductor Manufacturing North China (Beijing) Corp. | |
| 14:30-14:50 | Influence of ion implantation on void defect formation in epitaxially grown silicon |
| Zeqi Zha, Semiconductor manufacturing International (Beijing) Corporation | |
| 14:50-15:10 | Coffee Break |
Session VI: Advanced Process Development - 4
Session Chair: Xiaoping Shi
| 15:10-15:30 | Some key modifications of theory required to understand the leakage current mechanisms for ferroelectric HfZrO capacitors used in microelectronics |
| Wai-Shing Lau, Nanyang Technological University | |
| 15:30-15:50 | Lau's unified Schottky-Poole-Frenkel theory with asymmetric distortion by electron charge trapping proposed to explain the current-voltage characteristics of high-k metal-insulator-metal capacitors |
| Wai-Shing Lau, Nanyang Technological University | |
| 15:50-16:10 | The Study of Silicon Nitride Films Deposited in Batch ALD System |
| Shiyao Cheng, Beijing NAURA Microelectronics Equipment Co., Ltd. | |
| Poster Session: | |
| Surface Roughness Reduction of PECVD SiNX Film | |
| Xiaochen Wang, Piotech Inc. | |
| Mechanical Properties of Flip-chip Bonding Structures for Micro-LED Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding | |
| Kefeng Wang, Shanghai University | |
| A method by optimizing N/PMOS Gate height uniformity to improve MBIST performance at 28nm High-K/Metal Gate CMOS Technology | |
| Guanqiao Peng, Shanghai Huali Integrated Circuit Corporation | |
| WN Barrier Simulation for Electrical Improvement in Small CD BEOL vias Application | |
| Zhengning Gao, Lam Research | |
| Virtual DOE-assisted DTI Airgap Optimization | |
| Cherry Xu, Lam Research. | |
| Electroplating Process Improvement on Post-CMP Dishing Profile | |
| Wenbo Wu, Lam Research | |
| Effect of Sub-Atmospheric Chemical Vapor Deposition SiO2 Film Deposition Process on Surface Chemistry Sensitivity | |
| Jianan Wei, Piotech Inc. | |
| The solution of inline AL missing defect inspection and improvement for HK process | |
| Min Wang, Shanghai Huali Microelectronics Corporation | |
| Gas distribution effect on AlN thin film Thickness Non-uniformity | |
| Xiaomeng Liu, Piotech (Shanghai) Inc. | |
| Substrate Effect on Thermal ALD AlN thin film Gwoth Rate | |
| Xiaomeng Liu, Piotech (Shanghai) Inc. | |
| Adjustment of barrier film stack for improving TSV hillock in stacking CMOS image sensor | |
| Zherui Cao, Shanghai Huali Integrated Circuit Co., Ltd | |
| Study of GeSi/Si superlattice heteroepitaxial growth and characterization | |
| Hailing Wang, Beijing Superstring Academy of Memory Technology | |
| A Method for Predicting the Warpage of Semiconductor Wafer | |
| Zhiguo Li, Semiconductor Manufacturing International Corp. | |