| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 5D+5E
Session I: Si planarization
Session Chair: Xinping Qu
| *13:30-13:55 | Improving 300mm Si wafer planarization process with a wholistic approach |
| Weimin Li, Shanghai Institute of IC Materials | |
| *13:55-14:20 | Research on Surface Planarization Technology for Silicon Wafers |
| Weili Liu, Shanghai Institute of Microsystem and Information Technology | |
| 14:20-14:35 | SIN Residue Improvement for ILD0CMP |
| Yurong Que, Shanghai Huali Integrated Circuit Corporation | |
| 14:35-14:50 | Coffee Break |
Session II: Metal CMP
Session Chairs: Yuchun Wang & Weili Liu
| *14:50-15:15 | Chemical mechanical polishing of cobalt with reduce copper/cobalt with reduced copper/cobalt galvanic corrosion in alkaline slurry |
| Chuanyun Wan, Shanghai Institute of Technology | |
| *15:15-15:40 | Some Methods to Reduce Tiny Scratch Defect for Via Contact Tungsten Chemical Mechanical Planarization Process |
| Le Ning, Semiconductor Manufacturing North China (Beijing) Corporation | |
| 15:40-15:55 | Problem Analysis and Optimization Strategy on Chemical Mechanical Polishing Relevant for Cobalt Interconnects |
| Lifei Zhang, Hwatsing Technology Co., Ltd. | |
| 15:55-16:10 | Analysis of the Adsorption and Passivation Mechanism of JFCE on Copper Surface in Alkaline CMP Slurry |
| Ni Zhan, Hebei University of Technology | |
Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 5D+5E
Session III: CMP PAD
Session Chair: Jingxun Fang
| *9:25-9:50 | Research Progress and Challenges of Chemical Mechanical Polishing Technology of Silicon Carbide Wafer |
| Lijuan Zhang, Shanghai Xin Qian Semiconductor Co. Ltd | |
| 9:50-10:05 | High Efficiency Polishing of Silicon Carbide by Applying Reactive Non-Aqueous Fluids to Fixed Abrasive Pads |
| Jiapeng Chen, Shanghai University of Engineering Science | |
| 10:05-10:20 | Coffee Break |
Session IV: PCMP and novel CMP
Session Chairs: Jie Cheng & Shoutian Li
| *10:20-10:45 | The Challenge and Solution for Advanced Node Post Cu CMP Cleaning |
| Bing Liu, Anji Microelectronics Technology(Shanghai) Co., Ltd | |
| 10:45-11:00 | Research on the Dispersion Stability and Polishing Performance of Cerium Oxide Slurry |
| Min Liu, Hebei University of Technology | |
| 11:00-11:15 | A FEM Model of Micro-galvanic Corrosion Evolution at Ru/Cu Interface in H2O2 CMP Solution |
| Jie Cheng, China University of Mining & Technology-Beijing | |
| 11:15-11:30 | Effect of abrasive on the CMP performance of c-plane (0001) GaN flim |
| Jianghao Liu, Hebei University of Technology | |
| 11:30-11:45 | Effect of Surfactants on CMP Properties of M-plane Sapphir |
| Yida Zou, Hebei University of Technology | |
| 11:45-13:30 | Lunch Break |
| Poster Session: | |
| Study on the Slurry for Chemical Mechanical Polishing of Sapphire Wafer | |
| Wenhao Xian, Hebei University of Technology | |
| Pad Surface Variation and its Effect on SiO2 removal Rate in Ceria-Based CMP Slurry | |
| Yu Yao, Semiconductor Manufacturing Beijing Corporation | |
| Impact of Slurry for Dishing Reduction during Cu CMP | |
| Yu Yao, Semiconductor Manufacturing Beijing Corporation | |
| Study On the mechanism of WCMP induced W seam | |
| Shaojia Zhu, Shanghai Huali Integrated Circuit Corporation | |
| Pattern loading improvement for Cu CMP process | |
| Lei Zhang, Shanghai Huali Integrated Circuit Corporation | |
| Si Polishing and Flatness Control Study for 300mm Wafer Manufacturing | |
| Yunhong Hou, Applied Materials China | |
| WTW APC on STI CMP process control | |
| Yuan Li, Applied Materials China | |
| Enhance Stability of Endpoint Detection System on STI CMP | |
| Mengyao Liu, Applied Materials China | |
| Effects of Process to Material Removal in CMP: Modelling and Experiments | |
| Yanming Ren, Shanghai Institute of IC Materials | |