** to designate keynote talk - 30 min      
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 3B

Session I: Test I
Session Chair: Xiaowei Li
**13:30-14:00 Power-Aware Testing for Low-Power VLSI Circuits
  Xiaoqing Wen, Kyushu Institute of Technology
*14:00-14:25 Build-in Fault-Tolerant Computing Against Silent Data Corruptions
  Huawei Li, Institute of Computing Technology, Chinese Academy of Sciences
*14:25-14:50 TBD
   
14:50-15:05 Innovation Test Technology for Ultra-High-Speed ADC on ATE
  Yanyan Chang, Advantest (China) Co., Ltd
15:05-15:20 Ultra-Wideband (UWB) Test Solution on V93000
  Daniel Sun, Advantest (China) Co., Ltd
15:20-15:35 General Chip Digital Data Obtaining Solution on ATE
  Steve Xie, Advantest (China) Co., Ltd
15:35-15:50 An efficient protocol framework solution on V93000
  Jun Chen, Advantest (China) Co., Ltd
15:50-16:05 BB-AP High Parallel Test Solution in V93000 ExaScale Platform
  Tianyu Zhang, Advantest (China) Co., Ltd
16:05-16:35 Coffee Break
   

Session II: Reliability I
Session Chair:
16:35-16:50 A Novel Model-Matching Based Scratch Tool Tracing System
  Shi-Qiang He, Fujian Jinhua Integrated Circuit Co., Ltd
16:50-17:05 Faster Au-Al IMC growth under chlorine environment
  Lois Liao, WinTech Nano-Technology Services Pte. Ltd
17:05-17:20 The Design-Based Inspection Strategy for CU Void Defects Reduction
  Xingdi Zhang, Shanghai Huali Integrated Circuit Corporation
17:20-17:35 Reliability Research on micro bump and c4bump in Large-Size 2.5D FCBGA
  Xiang Li, Sanechips Technology Co., Ltd.
17:35-17:50 Reliability analysis of metal thermal interface materials for ultra-large size FCLGA package
  Zhuolun Wu, Sanechips Technology Co., Ltd.
   

Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 3B


Session III: Test II
Session Chair: Guihai Yan
*8:30-8:55 DPU (Data Processing Unit) enabling the Next-gen Computing System
  Guihai Yan, Institute of Computing Technology, Chinese Academy of Sciences
8:55-9:10 An Efficient Tool for Generating Test Program to Save Marginal Fail Chips
  Hanyan Chen, Advantest (China) Co., Ltd
9:10-9:25 A universal auto test program generation on ADVANTEST V93000 ATE platform
  Xin Song, Advantest (China) Co., Ltd
9:25-9:40 Early Fault-analysis using in-line Raman Spectroscopy
  Roy Pinhassi, Nova Ltd.
9:40-9:55 A Methdology for Testing Scan Chain with Diagnostic Enhanced Structure
  Shuai Wang, Sanechips Technology Co., Ltd.
9:55-10:10 A Novel Method to Achieve High Efficient Iteration of Mbist Pattern
  Feilong Pan, Sanechips Technology Co., Ltd.
10:10-10:45 Coffee Break
   

Session IV: Reliability II
Session Chair:
10:45-11:00 Impact of Interface Trap Density on the Endurance of HfO2/Si FeFETs
  Jiaqi Zheng, Zhejiang University
11:00-11:15 Impact of Interface Traps Generation on Flicker Noise Degradation in Si pMOSFETs
  Yi Jiang, Zhejiang University
11:15-11:30 Research on Hot Carrier Injection Optimization of 28HKMG Technology
  Weiwei Ma, Shanghai Huali Integrated Circuit Corporation
11:30-11:45 Applications of Picosecond Laser Acoustics to Power Semiconductor Device: IGBT and MOSFET
  Johnny Dai, Onto Innovation
11:45-12:00 RC-Triggered Silicon Controlled Rectifier-based ESD Clamp with Fast Transient Reaction
  Lingran Pan, Zhejiang University
12:00-13:30 Lunch Break
   

Session V: Metrology
Session Chair: Lei Feng
*13:30-13:55 TBD
   
*13:55-14:20 Ultra-high-throughput inline probe metrology and inspection
  Lei Feng, Infinitesima Limited
14:20-14:35 Innovations in Integrated Metrology
  Ilya Osherov, Nova Ltd, Israel
14:35-14:50 Computer Vision Technology Supported Rapid DRAM Capacitor Analyzing System Based on TEM Image
  Chang Xu, Fujian Jinhua Integrated Circuit Co., Ltd
14:50-15:05 Calibration of pitch standards of SEM for semiconductor dimension metrology application
  Wei Li, National Institute of Metrology
15:05-15:20 Virtual Metrology Modeling for CVD Film Thickness with Lasso-Gaussian Process Regression
  Shijia Yan, Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.(XMC)
15:20-15:35 Coffee Break
   
Poster Session:
  Applications of IC Design Layout Information in the In-line E-beam Defect Inspections
  Fengjia Pan, Shanghai Huali Integrated Circuit Corporation
  The Improvement Study of UTS CIS Bevel Peeling Defect Based on the Application of SEM API
  Xianghua Hu, Shanghai Huali Microelectronics Corporation
  Study on E-Beam Induced Deposition with Gas Injection System
  Fan Zhang, Semiconductor Manufacturing International Corporation
  Methods for Fin Etching profile maintaining and measurement
  Xu Yun, Semiconductor Manufacturing International Corporation
  Investigation of Different Gate Bias on PMOS HCI Performance
  Lei Li, Semiconductor Manufacturing International (Shanghai) Corp.
  Research on TDDB physical mechanism of 28HKMG MOSFET
  Ting Wan, Shanghai Huali Integrated Circuit Corporation
  Reservoir Effect Study on Electro-migration Behavior of AlCu Interconnects
  Jizhou Li, Semiconductor Manufacturing International Corporation
  A Method to Study Probe Needle Behavior during Hot Wafer Test on PS1600 Platform
  Ruiyu Liu, NXP Semiconductor (China) Ltd.
  An optimization method for capacitance causing errors in WAT testing
  WeiGuo Zheng, Shanghai Huali Integrated Circuit Corporation
  Influence of Foup Environment On Defects in Semiconductor manufacturing
  Weiwei Zhao, Shanghai Huali Integrated Circuit Corporation
  The verification of TDDB acceleration model in ultrathin gate oxide
  Wen Ying, Semiconductor Manufacturing International Corporation
  Remaining Useful Lifetime Prediction for Parts in Semiconductor Manufacture
  Wei Yu, Shanghai Huali microelectronics corporation
  The Methodology to Reduce of Line Leaning Defect at 19nm Nand Flash Polygate Process
  Jianye Song, Shanghai Huali Microelectronics Corporation
  A study of the effect of post HK nitridation on the interfacial trap for reliability improvement
  YANG LI, Shanghai Huali Integrated Circuit Corporation
  Anomaly Detection of Non-normal Distribution Wafer Acceptance Test Data via GMM-Based Method
  Junjun Zhuang, Shanghai Huali Microelectronics Corporation
  Anomaly Detection of CDSEM Images
  Meng Xue, Shanghai Huali Microelectronics Corporation
  Design and optimization of RC triggered MV-NMOS for 28nm CMOS Technology ESD protection
  Jia Zhu, Semiconductor Manufacturing International Corporation
  Application of Picosecond Ultrasonic Technology for CMOS Image Sensor
  Johnny Mu, ONTO Innovation
  Neutron Irradiation Induced Carrier Removal and Deep Level Trap in n-GaN Schottky Barrier Diodes
  Jin Sui, Shanghaitech University
  MetaVit-Trans: A framework for mixed-type defect detection of wafers with Vision Transformer combined with meta-learning and transfer learning
  Junfeng Zhao, Northeastern University
  Imaging time series data to Achieve Better Anomaly Detection in semiconductor production
  Wang Yong, Shanghai Huali Microelectronics Corporation
  Multispectral infrared radiation temperature measurement based on multi-objective differential evolution and deep learning
  JianWei Yan, Northeastern University
  Lithography Hotspot Detection Based on Transfer Learning with High Resolution Networks
  Hongzhe Wang, Northeastern University
  An End-To-End Detection Approach for Micropipe Defect of Sic Wafers Via Fusing Multiple Hierarchical Features
  Wenxin Shi, Tsinghua University
  An Automated Microscope Inspection Platform SiC Wafer Defect Detection
  Tiangang Zhao, Tsinghua University
  A Real-Time Detection Method for Wafer Probe Reference Die Shift
  Xiaofeng Liang, NXP Semiconductor (China) Ltd.
  Novel Localization Approaches in Metal –Insulator-Metal Structure Failure Analysis
  Lvye Fang, Semiconductor Manufacturing International Corporation