Symposium Chair: Dr. Linyong (Leo) Pang, D2S Inc., USA
** | to designate keynote talk - 30 min | |||
* | to designate invite talk - 25 min | |||
to designate regular talk - 15 min |
Sunday, March 17, 2024 Shanghai International Convention Center
Meeting Room: 3H+3I+3J
Session I: Lithograpy/Etch joint session (II & III)
Session Chairs: Leo Pang / Ying Zhang
13:30-13:35 | Opening Remarks |
**13:35-14:05 | How Process, Equipment, Material, Computation that work together to make up the Performance of Photolithography |
Qiang Wu, Fudan University | |
**14:05-14:35 | Novel Etch Solution with Sym3 for Logic BEOL Patterning Etch Applications |
Hui Sun, Applied Materials | |
**14:35-15:05 | New Materials and New Functionalities Co-work scaling, and the Exploration of Inner Spacer Technique |
David Xiao, Qianmo Micros Design LLC | |
15:05-15:20 | Coffee Break |
Session II: Developments in Lithography
Session Chairs: Qiang Wu / George Lu
*15:20-15:45 | Recent progress of EUV Chemically Amplified Resist with Negative-Tone Development (CAR-NTD) for improving Chemical Stochastic |
Toru Fujimori, FUJIFILM Corporation | |
*15:45-16:10 | Acid Generation Efficiency Prediction by Bond Cleavage Calculation of EUV Photoacid Generators |
Jayoung Koo, DuPont | |
*16:10-16:35 | High-efficient nanofocusing for nanopattern with a plasmonic BNA |
Dandan Han, University of Chinese Academy of Sciences | |
Monday, March 18, 2024 Shanghai International Convention Center
Meeting Room: 3H+3I+3J
Session III: Process, Equipment, and Materials I
Session Chairs: Weiming Gao / Xiaoming Ma
**08:30-09:00 | From Tape to Mirrors: 50 Years of Progress in Photomask Technology |
Chris Progler, Photronics | |
*09:00-09:25 | The Influence of Aberration on 193 Nm Immersion (193i) Lithography Process Window |
Yanli Li, Fudan University | |
*09:25-09:50 | Polyimides for Power Device Applications |
Masao Tomikawa, Toray Industries Inc. | |
09:50-10:05 | |
10:05-10:20 | Coffee Break |
Session IV: Computational Lithography
Session Chairs: Yayi Wei / Shiyuan Liu
*10:20-10:45 | Inverse lithography with adaptive mask complexity |
Xiaoxuan Liu, Guangdong University of Technology | |
10:45-11:10 | |
*11:10-11:35 | Mask Corner Rounding in OPC Modeling |
Weimei Xie, National Integrated Circuit Innovation Center | |
11:35-11:50 | A Study of the Via Pattern Lithography Process Window under the 7 nm Logic Design Rules with 193 nm Immersion Lithography |
Jinhao Zhu, Fudan University | |
11:50-13:30 | Lunch Break |
Session V: Next DTCO and Design Optimization
Session Chairs: David Wei / Wenzhan Zhou
*13:30-13:55 | A Study of Flexible BEOL Design Rules Allowing Degreed Slanted Interconnection in Advanced Nodes |
Xianhe Liu, Fudan University | |
*13:55-14:20 | Research on Cross-Level Interconnection of Metal Layers under 193 Immersion Lithography Conditions |
Ying Li, National Integrated Circuit Innovation Center | |
*14:20-14:45 | A Study of the Minimum Area Rule under the 193 nm Immersion Lithography for Via and Cut Patterns |
Qiang Wu, Fudan University | |
14:45-15:00 | Coffee Break |
Session VI: Process, Equipment, and Materials II
Session Chairs: Wenzhan Zhou / Weiming Gao
*15:00-15:25 | The Spin-on Multi-Layer Material Status for Advanced Device |
Satoshi Dei, JSR Electronic Materials (Shanghai) | |
15:25-15:50 | |
*15:50-16:15 | Enhancing High-throughput and High-precision CD-SEM Metrology Through Advanced Deep Learning-Based Image Processing |
Bo Wang, Hitachi High-Tech Corporation | |
16:15-16:30 | Correlation Between CD/LWR and Focus Level Fitting Error: A Process Quality Indicator |
Tianhao Huang, Zhejiang University | |
16:30-16:45 | The Impact of Wafer Warpage-Induced Unevenness on Alignment |
Pan Liu, Zhejiang University | |
Poster Session: | |
Pattern top loss improvement to enlarge process window for advanced node | |
Le Kuai, Nexchip Semiconductor Corporation | |
Coherence characterization for CDU budget breakdown in advanced DUV lithography | |
Wei Zhao, University of Chinese Academy of Sciences | |
Innovated Methodology Improving CD Uniformity for Lithography Using Wafer-less Dynamic Grouping Process Characteristics | |
Yong-Qiang Che, Semiconductor Manufacturing Beijing Corporation |