Symposium Chair: Prof. Xinping Qu, Fudan University, China
** | to designate keynote talk - 30 min | |||
* | to designate invite talk - 25 min | |||
to designate regular talk - 15 min |
Sunday, March 17, 2024 Shanghai International Convention Center
Meeting Room: 5D+5E
Session I: prensent and future
Session Chair: Xinping Qu
**13:30-14:00 | CMP equipments and application technologies for advanced manuafacturing process |
Xinchun Lu, Tsinghua University | |
*14:00-14:25 | CMP Technology for More than Moore Innovation |
Haedo Jeong, Pusan National University | |
*14:25-14:50 | New methodology for anisotropic nanoparticles characterization by polarization light scattering: length and diameter determination of rod-like nanoparticles |
David Jacob, Cordouan Technology | |
14:50-15:10 | Coffee Break |
Session II: ILD and STI slurry
Session Chair: Shoutian Li
*15:10-15:35 | Ceria slurry applications to STI, ILD and advanced packaging CMP |
Yuchun Wang, Anji microelectronics | |
*15:35-16:00 | From Good to Great: The Power of Advanced ILD CMP Slurries in Boosting Performance |
Juliane Hitzel, Advanced NanoSurface Technologies Co., Ltd. | |
16:00-16:15 | CeO2 slurry post rinse condition research in STI CMP technology |
Zhengyi Li, Semiconductor Manufacturing North China (Beijing) Corp. | |
16:15-16:30 | INCOMING IMPACT ON DISHING IMPROVEMENT IN FEOL PROCESS |
Huize Du, Shanghai Huali Integrated Circuit Corporation, Shanghai, China | |
16:30-16:45 | Positively charged ceria particles cleaning by HCOOH-H2O2-DIW solution |
Wenlong Tang, Fudan University | |
16:45-17:00 | Study on the dispersing effect and mechanism of LABSA on SiO2 in an alkaline barrier slurry |
Fangyuan Wang, Hebei University of Technology | |
Monday, March 18, 2024 Shanghai International Convention Center
Meeting Room: 5D+5E
Session III: Metal CMP
Session Chair: Jingxun Fang
*09:00-09:25 | Mechanism Research and Improvement of AL Scratch Defect Based on MG CMP |
Qingqing Duan, Shanghai Huali Integrated Circuit Corp. | |
09:25-09:40 | Cu post CMP cleaner development utilizing AI system |
Atsushi Mizutani, Fujifilm corporation | |
09:40-09:55 | Effect of Green Corrosion Inhibitors on the Performance of Copper-Cobalt CMP |
Chao He, Institute of Microelectronics, Hebei University of Technology | |
09:55-10:10 | Effect of Green Additive Sarcosine as Inhibitor for Cobalt-Based Copper Interconnect CMP |
ChangXin Dong, Hebei University of Technology | |
10:10-10:30 | Coffee Break |
Session IV: Compound Semiconductor CMP
Session Chair: Baoguo Zhang
*10:30-10:55 | The development progress of new high-efficiency silicon carbide substrate polishing slurry |
Xiuyan Sun, Zhangjiagang Anchu Technology Ltd. | |
*10:55-11:20 | Research on the electro-fenton magnetorheological finishing technology for GAN wafer |
Qiusheng Yan, Guangdong University of Technology | |
11:20-11:35 | Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer |
Steve Liu, Hebei University of Technology | |
11:35-13:30 | Lunch Break |
Session V: Novel Films CMP and Process
Session Chair: Jie Chen
*13:30-13:55 | CMP characteristics of IGZO thin film with a variety of process parameters |
Ming Zeng, Beijing Superstring Academy of Memory Technology, Beijing, China | |
*13:55-14:20 | Study on the Processing Characteristics and Polishing Technology of Easily Cleavable Gallium Oxide Crystals |
Hai Zhou, Yancheng Institute of Technology | |
14:20-14:35 | Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer |
Chenwei Wang, Jiangsu Shanshui Semiconductor Technology Co., Ltd. | |
14:35-14:50 | EOE evolution processes of same step profile in CMP with different one-material polishing time |
Lixiao Wu, Lanzhou University of Technology | |
14:50-15:05 | Effect of Surfactants on CMP Properties of C-, A- and R-plane Sapphire |
Xinjie Li, Hebei University of Technology | |
15:05-15:25 | Coffee Break |
Poster Session: | |
A Novel Endpoint System Application On DRAM W CMP Application | |
Lin Wang, Applied Materials | |
DISHING STUDY ON CHEMICAL MECHANICAL PLANARIZATION (CMP) | |
Huize Du, Shanghai Huali Integrated Circuit Corporation, Shanghai, China | |
ILD-CMP Wafer Edge Thickness Profile Stability Improvement Via Acid Silicon Oxide Slurry Formulation Design | |
Zhijie Zhang Liang Tian, Semiconductor Manufacturing North China (Beijing) Corp, Beijing, China | |
Study on Ceria Slurry for Chemical Mechanical Polishing of 4H-SiC | |
Sihui Qin, Hebei University of Technology | |
The effect of CeO2 / SiO2 composite abrasive on the performance of silicon CMP under low concentration conditions | |
Liu Wenbo, Hebei University of Technology | |
Chemical Mechanical Planarization of SiC Si-face by Al2O3-based acid slurry | |
Zehao Yue, Hebei University of Technology | |
Multiple approaches to achieve high throughput of Cu CMP process in LK 3 platens platform | |
Jiaming Xu, Applied Materials | |
Achieved World-Class BSI Si CMP TTV Performance via FVXE NIR® MPC System | |
Likun Cheng, Applied Materials | |
Study on chemical-mechanical synergies in polishing of ruthenium | |
Hongyu Di, Dalian University of Technology | |
Effects of Polyvinyl Alcohol on Silicon Chemical Mechanical | |
Shuangshuang Lei, Hebei University of Technology | |
Motor torque algorithm and polish pressure optimization in STI CMP Process | |
Chen Qiang, Applied Materials | |
RTPC XE for 28nm BEOL Cu CMP | |
Youlai Xiang, Applied Materials (China), Inc. China | |
Study on 28nm Technology Node ILD0-CMP Micro_Scratch Defect Reduction | |
Xing Ma, Shanghai Huali Integrated Circuit Corp. | |
China 1st RTPC X/Fullscan X implemented in LK Metal CMP | |
Zhenxing Song, Applied Materials (China) | |
Feasibility Analysis of Skip ILD-CMP Scheme on 28nm Technology Node | |
Fan Chen, Shanghai Huali Integrated Circuit Corp. | |
A Trade-off Balance Between Cu Corrosion and Cu Oxide Defect | |
Chenyu Zhou, Shanghai Huali Integrated Circuit Corp. | |
The Precise Profile Control of RTPC X in CIS Cu CMP | |
Mengxia Li, Applied Materials | |
Micro-Scratch Defect Improvement for CMP Process | |
Kun Zhang, Applied Material |