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Qing-Tai Zhao completed his PhD in physics at Peking University in 1993. He then joined the Institute of Microelectronics at Peking University as lecturer and associate professor, where he focused on the research of SOI materials and devices. In 1997, he was awarded a Humboldt Research Fellowship, which led him to Forschungszentrum Jülich in Germany, where he currently leads a research group specializing in nanoelectronic devices. His primary research interests include Si-Ge-Sn based high mobility devices and technology, FDSOI and nanowire devices for low power applications, as well as ferroelectric-based neuromorphic devices and cryogenic electronics for quantum computing. Since 2020, he has served as a governing board member of the SINANO Institute, a European academic and scientific association for nanoelectronics. He has authored and co-authored around 300 peer-reviewed publications and holds over 40 patents.
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