Zongliang Huo, received the PhD degree in Microelectronics and Solid State Electronics from Peking University, is the CTO of Yangtze Memory Technologies, Executive Vice President of the Group, and also the Head of the R&D Engineering Center. Dr. Huo has been engaged in the R&D of memory technology for more than 20 years. He joined Wuhan Xinxin Semiconductor Manufacturing CO., Ltd. in 2014 and later transferred to Yangtze Memory Technologies Co., Ltd., becoming overall responsible for the R&D of 3D NAND flash memory. He has not only successfully completed the R&D of 32/64/128/232-layer 3D NAND flash memory and products but also achieved its mass production. Dr. Huo has published over 100 papers in the field of semiconductor memory and applied for more than 500 patents domestically and internationally.
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