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王江波 副总裁，华灿光电股份有限公司 |
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个人简介 王江波，博士，1992年和2000年分别获得北京大学电子学系学士和硕士学位， 一直从事半导体光电材料和器件方面的研究，于2005年获得美国亚利桑那州立大学电子工程系博士学位。曾任职于美国亚历桑那州立大学分子束外延光电实验室，飞利浦Lumileds照明公司等。2010年加入华灿光电股份有限公司，目前任公司副总裁及研发中心负责人。王江波博士入选“2011-2012中国LED行业优秀科技人才”、武汉市东湖开发区“3551”人才计划和湖北省"百人计划"，并荣获武汉青年五四奖章、有突出贡献中青年专家和湖北省特聘专家等荣誉称号。研究成果发表于18篇国内外知名索引期刊，57篇会议摘要及文集，和75项专利及发明备忘录。 摘要 Group III nitride-based light-emitting diodes (LEDs) are the key to the solid-state lighting, and their performance characteristics such as luminescence efficiency and electrical characteristics have improved dramatically over the past 10 years. While much success has been achieved, more work is needed to realize the adoption rates required for substantial energy savings for the world. In this report, the global and China market trends for LED will be reviewed. Various newly developed GaN based LED technologies including epitaxial growth and chip processes will be introduced. |
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