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裴轶 能讯高能半导体，器件技术总监 |
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个人简介 Yi Pei received the B.S degree in Electrical Engineering from Peking University, Beijing, China, in 2000, the M.S and Ph.D degrees in Electrical Engineering from University of Santa Barbara, U.S.A, in 2005 and 2009, respectively. He has been in Dynax Semiconductor since 2009. He is currently the VP of technology, in charge of GaN RF product design, cutting edge GaN technology development and IP strategy. His research interests includes microwave and millimeter wave GaN electronics design and modeling, GaN power electronics design and application, and III-N semiconductor processing technology development. He is the author or coauthor of more than 100 journal and conference papers. He also holds more than 80 granted patents and patent applications. He is a senior member of IEEE and a senior member of the Chinese Institute of Electronics. 摘要 GaN HEMTs are extremely attractive for high-efficient and high-frequency application in 5G communication system. New Technology regarding III-N device design and process are discussed. Output power, breakdown voltage and yield are significantly increased. Outstanding device performance, excellent reliability data and new progress on accurate nonlinear modeling are demonstrated, facilitating the adoption of GaN technology by Dynax. |
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