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LEBLANC Remy Director, Product Development, OMMIC |
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摘要 OMMIC has developed a GaN/Si process dedicated to microwave applications. This process has the same noise figure, gain and frequency cut-off than a 130nm PHEMT process, but with a much higher output power. It makes use of an in-situ passivation to keep lag effects not higher than P-HEMT counterparts, re-grown Ohmic contacts to reduce source resistance, and a 100 nm mushroom gate. Several MMICs have already been produced with this process, including a 10W 30GHz power amplifier and a 1.2dB NF X band robust LNA. This multipurpose process is suitable for high performance complete TR-Chips, including PA, LNA and switch on the same MMIC for military, space or 5G high frequency applications. |
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