(** to designate keynote talk, * to designate invite talk)
Sunday, March 12, 2017, Shanghai International Convention Center
Joint Session: Symposium II and Symposium III-Lithography/Etch joint session
Meeting Room：3rd Floor Yellow River Hall 黄河厅
Session Chairs: Kafai Lai/Ying Zhang
| 13:30-13:35 | Opening Remarks |
| Kafai Lai, IBM | |
| **13:35-14:05 |
The Path Forward: The Future of Optical Lithography |
| Donis Flagello, Nikon Research America | |
| **14:05-14:35 | Patterning Technology Inflections for the 10nm and Beyond Logic Nodes |
| Rich Wise, Lam Research | |
| *14:35-14:55 | Considerations for pattern fidelity control towards 5nm node |
| Hidetami Yaegashi, TEL | |
| *14:55-15:15 |
Key points in 14 nm Photolithographic Process Development, Challenges and Process Window Capability |
| Qiang Wu, SMIC | |
| 15:15-15:30 | Coffee Break |
Session II: Computational Lithography
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session Chairs: Yayi Wei / Shiyuan Liu
| **15:30-16:00 | Computational Lithography for Process Window Enhancement and Control |
| Yu Cao, ASML-Brion | |
| *16:00-16:20 | Impact of multi beam on Mask Process Modeling |
| Ryan Pearman,D2S | |
| 16:20-16:35 |
The Insertion of extreme ultraviolet lithography (EUVL) from patterning perspective |
| Weimin Gao, Synopsys | |
| 16:35-16:50 | An off-line roughness evaluation software and its application in quantitative calculation of wiggling based on low frequency power spectrum density method |
| Zhang Libin, IMECAS | |
| 16:50-17:05 | Level-set based ILT with Vector Imaging Model Emphasis |
| Yijiang Shen, Guangdong University of Technology | |
| Poster Session: | Location: Foyer of Yangtze River Hall |
| Coffee Break | DOF enhancement of 3bar PO pattern in 28nm Technology Node |
| Bin-Jie Jiang, Shanghai Huali Microelectronics Corporation | |
| Estimated the potential hot spots and provided OPC improved solution based on the light intensity distribution | |
| Wang Dan, HLMC | |
| The incorporation of the pattern matching approach into a post-OPC repair flow | |
| Yaojun DU, SMIC | |
| The OPC Methods to Improve the Coverage Area of Metal Layers on Via Layer | |
| Chen Yanpeng, Shanghai Huali Microelectronics Corporation | |
| Synthesis and Directed Self-assembly of Modified PS-b-PMMA for Sub-10 nm Nanolithography | |
| Xuemiao Li, Fudan University | |
| Research of SMO process to improve the lithography system imaging capability for 28nm node and beyond | |
| Haibin Yu, Shanghai Huali Microelectronics Corporation | |
| The phenomena of footing’s variation caused by oxidation of nitrogen-containing substrates | |
| Song Bai,Technology R&D, SMIC Advanced Technology R&D (Shanghai) Corporation | |
| 28nm MPW“Blading Mask”Project Study and Implement | |
| Shijian Zhang, SMIC | |
| A Study of N-induced Residue Defect on Gate Oxide after Lithography Rework | |
| Zhou Fang, Semiconductor Manufacturing International Corp | |
| Application of Litho-Friendly Design in 28nm Metal Layer | |
| Wu weiwei, Shanghai Huali Microelectronics Corporation | |
| Wafer Edge Treatment In Lithography Process For BEOL Peeling Defect Reduction | |
| Xiaofeng Yuan, Roger_Yuan | |
| Ultrapure Chemical Components for Next Generation Materials | |
| Hyunyong Cho, Heraeus | |
| How to Increase Photoresist lifetime at the extreme condition | |
| Qiaoqiao Li, Sarah Li | |
| Illumination Optimization for Lithography Tools OPE Matching at 28 nm Nodes | |
| Wuping Wang, Shanghai Huali Microelectronics Corporation | |
| Critical Dimension (CD) variation control of the implant layer with nitride film | |
| Xiaoyan Sun, SMIC | |
| Hole Pattern Circularity Improvement with Functional Rinse | |
| Lei Ye, SMIC | |
| Diffraction-based and Image-based Overlay Evaluation | |
| Jian Xu, Shanghai Huali Microelectronics Corporation | |
| Blob Defect Solution for 28 nm hole pattern in 193 nm topcoat-free immersion lithography | |
| Dan Li, Shanghai Huali Microelectronics Corporation | |
| The Optimization of development processes in TC-less immersion process | |
| Wei-Ming He, SMIC | |
| A kind of one-component chemically amplified positive photoresist for deep UV lithography | |
| liyuan wang, College of Chemistry, Beijing Normal University |
Monday, March 13, 2017 Shanghai International Convention Center
Joint Session: Symposium II and Symposium IX-DTCO Joint session
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session Chairs: Yiyu Shi / Leo Pang
| 8:30-8:35 | Opening Remarks |
| Yiyu Shi | |
| **8:35-9:05 | Design Technology Co-optimization for Disruptive Patterning Schemes |
| Puneet Gupta, UCLA | |
| **9:05-9:35 | Software Defined Chip: Technologies, Challenges and Opportunities |
| Shaojun Wei, Tsinghua University | |
| *9:35-9:55 | Data Analytics and Machine Learning for Design-Process-Yield Optimization in Electronic Design Automation and IC Semiconductor Manufacturing |
| Luigi Capodieci, Motovi.ai | |
| 9:55-10:10 | Coffee Break |
Session IV: Tool, Mask & Metrology
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session Chairs: Motokatsu Imai/Qiang Wu
| *10:10-10:30 | Electron beam lithographic modeling assisted by artificial intelligence technology |
| Noriaki Nakayamada, NuFlare | |
| *10:30-10:50 | Enhancing Light Source Capabilities for the sub-7nm Node |
| Will Conley, ASML-Cymer | |
| *10:50-11:10 | High accuracy EPE measurement and Litho. Simulation capability for ILT |
| Mark Sheppard, Advantest | |
| *11:10-11:30 | Advanced CD-SEM metrology for Edge Placement Error (EPE) control in the post Moore Era. |
| Takeshi Kato, Hitachi High Technologies | |
| *11:30-11:50 | Development of 250W EUV light source for HVM lithography |
| Taku Yamazaki, Gigaphoton | |
| 11:50-13:20 | Lunch Break |
Session V: Multiple patterning
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session chairs: Wanh Yueh / Zhimin Zhu
| 13:20-13:35 | The solutions for 3D-NAND process with Canon’s latest KrF scanner |
| Masanori YAMADA, Canon | |
| 13:35-13:50 | Enhanced control of overlay and CDU for immersion scanners targeting 7 nm node patterning |
| Reiji Kanaya, NIKON | |
| 13:50-14:05 | The Impact of Double Patterning Decomposition Algorithm on 14nm Metal Layer Patterning |
| Qing Yang, SMIC | |
| 14:05-14:20 | Application of OPE Master for Critical Layer OPE Matching |
| Yuan Tao, Nikon Shanghai | |
| 14:20-14:35 | Coffee Break |
Session VI: Process & Material
Meeting Room: 3rd Floor Yellow River Hall 黄河厅
Session chairs: Gyomei Shiba / Hai Deng
| **14:35-15:05 | Material Challenges for Sub 10nm Lithographic Patterning |
| James Cameron, Dow | |
| *15:05-15:25 | DDR Process and Materials for NTD Photo Resist |
| Shuhei Shigaki, Nissan Chemicals | |
| *15:25-15:45 |
Advanced Lithographic Filtration and Contamination Control for 14nm node and beyond Semiconductor Processes |
| Rao Varannasi, Pall Corporation | |
| 15:45-16:00 | Novel EUV Resist Development for Sub-14 nm Half Pitch |
| Koichi FUJIWARA, JSR Shanghai | |
| 16:00-16:15 | Advancement in Resist Materials for Sub-7 nm Patterning and Beyond |
| Li Li, Global Foundries | |
| *16:15-16:35 | Molecular Force Modeling of Lithography |
| Zhimin Zhu, Brewster Science | |
| 16:35-16:50 | Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application |
| Jie Li, Fudan university |