(** to designate keynote talk, * to designate invite talk)
Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room: 5D+5E
Session I: Test I
Session Chair: Xiaowei Li
13:30–13:35 | Chairman Remarks |
Peilin Song / Baozhen Li | |
**13:35–14:05 | Challenges and Solutions in Today’s Safety Critical SOCs |
Dr. Yervant Zorian, Synopsys, USA | |
14:05–14:20 | A Method for Test while Dealing with Jitter Transfer on ATE |
Kenichi Nagatani, Advantest (China) Co., Ltd. | |
14:20–14:35 | The Monitoring Evolutionary Algorithm in Device Production Testing |
Kun Xu, Advantest (China) Co., Ltd. | |
14:35–14:50 | Achieving Mastery in Chip Manufacturing |
Cyril-Patrick Fernandez, Advanced Fab Technology | |
14:50–15:35 | Coffee Break |
Session II: Test II
Session Chair: Kelvin Xia
15:35–15:50 | Application of an enhanced failure bitmap method for memory fault isolating |
Zhimin Zeng, HHGrace | |
15:50–16:05 |
Cars and MEMS: Advanced Probe Technology Enabling Automotive IC Wafer Test |
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Amy Leong, FormFactor Inc, USA |
16:05–16:20 |
Low-frequency noise assessment of 1.8 V input-output bulk FinFETs with ALD SiO2 |
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Eddy Simoen, IMEC |
16:20–16:35 | Key Trends Driving the Need for More Semiconductor System-Level Test |
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Anil Bhalla, Astronics Test Systems, USA |
16:35–16:50 | Advanced Tool Matching Methodology in Semiconductor Manufacturing |
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Liu Ziqian, SMIC |
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Poster Session: | Location: 5th Floor |
Coffee Break | Research on Ultra-Low RDSON Wafer Measurement |
Lei Wang, HHGrace | |
A Method of Contact Level PVC Enhancement | |
Xiaojun Xu, HHGrace | |
Study on optimization method of flash cell analog measurement | |
Wu Yuan, HHGrace | |
Thickness and Concentration Control for Silicon-Germanium (SiGe) Films | |
Liying Wu, SMIC | |
Inline Thickness Control for High-k Metal Gate Films Using Ellipsometer and XPS | |
Liying Wu, SMIC | |
CD SEM condition setting optimization for CD measurement accuracy improvement | |
Hanmo Gong, SMIC | |
ULK Optimization for Cu/ULK(K=2.5) BEOL Interconnect TDDB and EM Improvement at 28/14nm Technology Node and Beyond | |
Zou Xiaodong, SMIC |
Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 5D+5E
Session III: Metrology
Session Chair: Frank Feng
*8:30–8:55 | Applications of Advanced Techniques of Transmission Electron Microscope in Characterizations of Semiconductor Devices |
Dr. John Li, GLOBALFOUNDRIES, USA | |
8:55–9:10 | The Detection and Investigation of Poly Line Leakage by Electron-Beam Inspection |
Rongwei Fan, Huali | |
9:10–9:25 | Legacy Profiler Capacity/Utilization Improvement with Automation for High Volume BAW Production |
Yanghua He, Qorvo.Inc, USA | |
9:25–9:40 | Monitoring Critical Process Steps in 3D NAND and Advanced RF using Picosecond Ultrasonic Metrology |
Priya Mukundhan, Rudolph technologies, USA | |
9:40–9:55 | Accelerating the time to market for advanced memory and logic devices with automated (S)TEM based metrology |
Dr. Justin Roller, Thermo Fisher Scientific, Hillsboro, USA | |
9:55–10:30 | Coffee Break |
Session IV: Metrology and Defect Localization
Session Chair: John Li
*10:30–10:55 | Machine Learning Enabled in situ Etch Endpoint Control |
Ye Feng, Director, Lam Research | |
10:55–11:10 | Effective Electrical Reliability Verification for Advanced Nodes |
Frank Feng, Mentor, A Siemens Business, USA | |
11:10–11:25 | The total inspection solutions of extreme tiny defect in BEOL advanced semiconductor process |
Xingdi Zhang, Huali | |
11:25–11:40 | The Detection and Investigation of Tungsten-plug Voids by Electron-Beam Inspection |
Rongwei Fan, Huali | |
11:40–11:55 | Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale |
Xing Wu, East China Normal University | |
11:50–13:30 | Lunch Break |
Session V: Reliability - I
Session Chair: Jian Fu Zhang
*13:30–13:55 | Reliability Engineering: Help Enable Technology Scaling |
Dr. Sangwoo Pae, Samsung | |
13:55–14:10 | Changeable Electromigration Failure Mode in Wide Cu Interconnects |
Hui Zheng, Huali | |
14:10–14:25 | Impact of TID Radiation on Hot-Carrier Effects in 65nm bulk Si NMOSFETs |
Zhexuan Ren, Peking University | |
14:25–14:40 | Reliability Comparison between Al Process and Cu Process based on 0.11um Technology Node |
Zhao Xiang Fu, SMIC | |
14:40–15:30 | Coffee Break |
Session VI: Reliability - II
Session Chair: Ye Feng
*15:30-15:55 | Assessing the accuracy of statistical properties extracted from a limited number of device under test for time dependent variations |
Prof. J. F. Zhang, Liverpool John Moores University | |
15:55-16:10 | Advanced n-Channel LDMOS with Ultralow Specific ON-Resistance by 0.18 μm Epitaxial BCD Technology |
Yao Yao, Fudan University | |
16:10-16:25 | Reliability Study of Novel Gate Oxide Process Control Method |
Guangpeng Zeng, Nankai University |