(** to designate keynote talk, * to designate invite talk)
Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room:3I+3J
Session I: Emerging Technologies - I
Session Chairs: Edward Yi Chang/Meikei Ieong
**13:30-14:00 | Application driven Technologies Beyond Scaling |
Meikei Ieong, ASTRI, Hong Kong, China | |
*14:00-14:25 | SiGe epitaxial memory for neuromorphic computing |
Jeehwan Kim, MIT, USA | |
*14:25-14:50 | Research Achievements of Key Technologies in 3D Integration and Heterogeneous Integration |
Kuan-Neng Chen, National Chiao Tung University, Taiwan, China | |
*14:50-15:15 | Synthesizing Large-area Two-Dimensional Molybdenum Ditelluride by Physical Vapor Deposition and Solid-phase Crystallization |
Tuo-Hung Hou, National Chiao Tung University, Taiwan, China | |
15:15-15:30 | Coffee Break |
Session II: Semiconductor Technology in Healthcare
Session Chairs: Jingwei Bai/Kangguo Cheng
*15:30-15:55 | Implantable Optoelectronic Devices for Deep-Brain Neural Modulation and Sensing | ||
Xing Sheng, Tsinghua University, China | |||
*15:55-16:20 | Nanostructures for smart systems | ||
Ray Saupe, Fraunhofer ENAS, Germany | |||
*16:20-16:45 | CMOS Integrated Lab-on-chip System for Personalized DNA Sequencing | ||
Hao Yu, Southern University of Science and Technology, China | |||
*16:45-17:10 | The Two-fold Role of Connected Devices — Enabling remote healthcare service delivery & healthcare service innovations | ||
Zhen Fang, Institute of Electronics, Chinese Academy of Sciences, China | |||
Poster Session: | Location: 5th Floor | ||
Coffee Break | An improved behavioral simulation model for afterpulsing phenomenon | ||
Tingchen Zhao, Nanjing University of Posts and Telecommunications | |||
ESH Benign Epitaxial Wafer Surface Pretreatment Method for Mercury Probe C-V Test | |||
David Sun, Huaying Research Co., Ltd | |||
Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 3I+3J
Session III: MEMS and Sensors-I
Session Chairs: Fuhua Yang/Jingwei Bai
*8:30-8:55 | All-silicon Micro-Fabricated High-Temperature High-Pressure Sensor |
Man WONG, The Hong Kong University of Science and Technology, Hong Kong, China | |
*8:55-9:20 | The development of micro-machined based electrochemical seismic sensors |
Junbo Wang, Institute of Electronics, Chinese Academy of Sciences, China | |
*9:20-9:45 | RF MEMS resonant devices for wireless communication |
Jinling Yang, Institute of Semiconductors, CAS, China | |
*9:45-10:10 | MEMS Sensors for Oceanic Applications |
Chenyang Xue, North University of China, China | |
10:10-10:30 | Coffee Break |
Session IV: Novel Materials, Devices and Processes-I
Session Chairs: Hyungjun Kim/Zhen Zhang
*10:30-10:55 | Low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface of ion sensors |
Zhen Zhang, Uppsala University, Sweden | |
*10:55-11:20 | Two dimensional materials for polarizer-free organic light emitting diodes |
Soo Young Kim, Chung-Ang University, Korea | |
*11:20-11:45 | MEMS Inertial Sensor |
XUDONG ZOU, Institute of Electronics, CAS, China | |
11:45-13:30 | Lunch Break |
Session V: Novel Materials, Devices and Processes-II
Session Chairs: Hsiang-Lan Lun/Wu-Ching Chou
*13:30-13:55 | Growth and characterization of GaN/AlxGa1-xN heterostructures for the high speed and high power electronic device application |
Wu-Ching Chou, National Chiao Tung University, Taiwan, China | |
*13:55-14:20 | From Carbon to Silicon, MEMS Enables AI Age |
Shaohua Liu, Naura, China | |
14:20-14:35 | ALD Moisture Barrier for Wafer Level and Die Level Encapsulation |
Sami Sneck, Beneq, Finland | |
14:35-14:50 | Study of the Mesa Etched Tri-Gate InAs HEMTs with Extremely Low SS for Low-Power Logic Applications |
Yueh-Chin Lin, National Chiao Tung University, Taiwan, China | |
14:50-15:05 | Coffee Break |
Session VI: Emerging Technologies - II
Session Chairs: Kangguo Cheng/Bert Brost
*15:05-15:30 | Next Generation of WLCPS Contacting Technologies for 250 Micron Pitch and Below |
Bert Brost, Xcerra Corporation | |
15:30-15:45 | Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure |
Suguru Tatsunokuchi, Tokyo Institute of Technology, Japan | |
15:45-16:00 | Study on Sensitivity of the Bilateral Ultra-thick Silicon Sensors as Neutron Dosimeter |
Yahuan Huang, Peking University, China | |
16:00-16:15 | A novel three observation-windows measurement scheme for SPAD Fluorescence Lifetime Imaging Detector |
Ding Li, Nanjing University of Posts and Telecommunications, China | |
16:15-16:30 | Innovative Method for the Analysis of Micor-contamination on Semiconductor Wafer Surfaces |
Jan Wang, Huaying Research Co., Ltd, China | |