Yaoguo (Gary) Ding is vice president in the Technology and Manufacturing Group and the
director of thin films and planarization technology at Intel Corporation. He manages the thin
films and planarization areas in Intel’s logic technology development (LTD) division, where
his responsibilities include technology development, ramp-up and pathfinding.
Ding has worked within Intel’s logic technology development organization for more than two
decades, developing expertise in planarization (also known as chemical mechanical
polishing), metallization, silicides, semiconductor process flow, High-k metal gate
technology, 3-D transistors, transistor performance, reliability and yield improvement.
He has held a variety of process engineering and technology development leadership roles
during his tenure at Intel and contributed to more than 10 generations of Intel silicon
technology. Before he assumed his current role in 2017, Ding’s prior leadership roles
included managing front-end metallization, front-end planarization and technology
development engineering in the LTD group. He joined Intel in 1994 as a senior process
engineer.
Ding holds a bachelor’s degree in physics from Peking University in Beijing, China; and
received master’s and Ph.D. degrees in materials science and engineering from Cornell
University. His Intel process development work has resulted in a handful of published
papers, as well as a patent in the field of chemical mechanical polishing. He has participated
at several industry events, including serving as keynote speaker.
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