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Prof. Weisheng Zhao is currently deputy vice-dean of the school of Microelectronics at Beihang University, he is also the director of Fert Beijing Research Institute and Beihang-Goertek Joint Microelectronics Institute. He graduated from University of Paris Sud in 2007 and was nominated as tenured research scientist at CNRS in France from 2009 to 2013. He is the recipient of Chinese 1000 Young Plan (2013) and IEEE Guillemin-Cauer Award (2017).
He has focused on the study of spintronics memory and logic devices over a long period, and established a multi-disciplinary research framework from device design, novel materials research to circuit design. Since the receiving of Young's 1000 Plan in 2013, the main achievements are summarized as follows:
1) He discovered the mechanisms of PMA in the Heavy metal/CoFeB/MgO system based perpendicular magnetic tunnel junction (p-MTJ). Using the atom-thick tungsten as the heavy metal material, we experimentally achieved the largest tunnel magnetoresistance (TMR) ratio in p-MTJs.
2) He designed magnetic skyrmion racetrack memory and neuromorphic devices utilizing voltage controlled magnetic anisotropy.
3) By integrating MTJs, he designed and validated two kinds of low power spin logic devices and circuits.
These three parts of research provide theoretical basis and prototype for achieving low power information devices.
In the recent five years, He has published 50 JCR Q1 papers as the first or the corresponding author in the Nat. Com, Proc. IEEE and Phys. Rev. Appl., etc., 2 highly cited papers; 1 English academic monographs; 23 issued patents, 63 patents pending and 2 transferred to Huawei technology. The total citation shown in Google Scholar is > 5000.
He serves in the editorial board of four SCI journals, including IEEE Trans. Circuits Syst. I Reg. Papers, IEEE Trans. on Nanotech and IET Electronic Letters.
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