Peter Friedrichs
英飞凌科技，高级总监

摘要

Silicon carbide MOSFETs are now being used in many new designs, mainly for solar and fast EV charging. However, due to findings on early MOSFETs there are significant concerns whether the technology is reliable enough to serve over the lifetime of those products. The contribution will explain Infineon’s approach to guarantee the expected stability. It is based on a deep understanding of relevant effects in order to predict the behavior of SiC MOSFETs over the lifetime under various stress conditions. An application specific procedure is the key for success. Topics to be discussed will be mainly those where we have to consider differences to the silicon technology. Special attention will be given to the influence of the right housing technique and the selection of proper control components.