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March 14-16,2018
Shanghai New International Expo Centre

Symposium II: Lithography and Patterning


Symposium II: Lithography and Patterning

Symposium Committee

Dr. Kafai LAI
Chair

IBM, USA

Dr. Linyong (Leo) Pang
Co-Chair

VP. D2S Inc.

Dr. Ken Wu
Co-Chair

SMIC, China

Mr. Xiaoming Ma
Member

Dow Chemical

Dr. Zhimin Zhu
Member

Brewer Science, USA

Dr. Zhibiao Mao
Member

Huali Semiconductor Manufacturing Company, China

Dr. Yayi Wei
Member

Chinese Academy of Science

Mr. Motokatsu.Imai
Member

Mito Kogyo CO., LTD. Japan

Hai Deng
Member

Fudan University

Wang Yueh
Member

Intel, USA

Shiyuan Liu
Member

Huazhong University of Science and Technology , China

Dr.Yuyang Sun
Member

Mentor Graphics,USA


Symposium II: Lithography and Patterning


  •  Resist
    -          Resist fundamentals
    -          Cost effective photoresist for volume production
    -          High performance photoresist
    -          Resist adhesion control for advanced process
    -          Advanced processing technology

  •  Optical lithography
    -          CD and overlay control in process
    -          Immersion Lithography
    -          Defectivity control
    -          Anti-reflection schemes for advanced process
    -          Advanced optical exposure tools and light source

  •  Computational Lithography
    -       Cost effective RET techniques
    -       Advanced optical imaging modeling
    -       Advanced RET such as multiple patterning and polariztion application
    -       Advanced OPC & Source mask optimization
    -       DFM solutions and Design Technology Co-optimization for 28nm nod and beyond

     
  •  Emergent Technology
    -          EUV
    -       Directed Self-assembly
    -          Direct-write E-beam
    -          Nanoimprint
    -          Other novel lithographic techniques and Complementary lithography

  •  Metrology and inspection
    -          Overlay, CD, defect, and topography metrology
    -          Integrated metrology
    -          Advanced process control
    -       Computational Metrology and Inspection

  •  Mask technology
    -          Cost effective reticles for 32nm and below
    -          Mask Defect inspection, repair and CD control
    -          Advanced mask blank and EMF effect
    -      OPC for mask for 28nm node and beyond