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Dr. Qiang Wu is a researcher/doctoral supervisor of the School of Microelectronics of Fudan University, graduated from the Department of Physics of Fudan University in 1993, and obtained a Ph.D. in physics from Yale University at the end of 1999. After graduation, he worked in IBM, Shanghai Huahong NEC, ASML, SMIC, SMIC ATD, and Shanghai ICRD. In 2004, he, for the first time, accurately measured the effective photoacid diffusion length in the world. After returning to China, he has served as managers of lithography process development and exposure tool application. He has developed 0.25 m to 7 nm logic lithography process technologies, pre-researched 5 nm logic lithography process technology based on extreme ultraviolet (EUV) lithography, and led the team to successfully implement 193 nm immersion lithography tools into Chinese Mainland for the first time and independently developed lithography process simulation software. As of September 2022, he has obtained 99 patent authorizations, including 40 US patents, and published 74 technical papers in photolithography area. From 2007 to 2009, he served as the chairman of the lithography branch of ISTC (International Semiconductor Technology Conference). From 2010 to 2022, he served as the vice chairman of the photolithography branch of CSTIC (China International Semiconductor Technology Conference). In terms of research and development of photolithography computing model, he and his team have successively developed the first all-physical photolithography process simulation software（aka. CF Litho）in China, including Negative Toned Development (NTD) photoresist physical model, the world's first 193 nm immersion photolithography development defect physical model, the first domestic diffusion based overlay (DBO) simulation physical model, all-physical EUV photolithography process simulation software（aka. CF Litho EUV）and EUV photoresist physical model. Dr. Wu and other 7 authors also authored the book titled Photolithography near the diffraction limit (Tsinghua University Press, first edition in February 2020).
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