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English
June 27-29, 2020
Shanghai New International Expo Centre

Advanced Memory Technologies: RRAM

Attendee Registration
   
Date: Sunday, June 28, 2020
   

ReRAM devices and applications

Dr. Zhiqiang Wei
Technical Director, Avalanche

ABSTRACT
In this talk, we will review history and recent progresses in Resistive Random Access memory (ReRAM). First, the material for resistive switching layer and electrodes, physical mechanism of switching of ReRAM will be discussed. Second, we’ll talk about electrical characteristics, focus on the issues of bit-to-bit, cycle-to cycle variation, endurance, retention, multi-level operation, and scaling trends. Finally, the applications such as embedded/stand-alone nonvolatile memory, true random number generator, physical unclonable function (PUF), and in memory computing will also be discussed.

   
  BIOGRAPHY
Zhiqiang Wei received the B.S. degree from the Huazhong University of Science and Technology, Wuhan, China, in 1996, and the M.S. and Ph.D. degrees from Osaka University, Japan, in 2000 and 2003, respectively. In 2003, He joined Panasonic, where he engaged in the development of resistive memory as a Chief Engineer. After that, he was a technical director with Rambus Inc., in charge of emerging memory technology platform development. He was invited to give talk in 19 international conferences and published more than 60 papers which include many IEDM and VLSI papers. He is a committee member of IEEE International Memory Workshop and IEEE International Reliability Physics Symposium.