Symposium Chair: Prof. Xinping Qu, Fudan University, China
** | to designate keynote talk - 30 min | |||
* | to designate invite talk - 25 min | |||
to designate regular talk - 15 min |
Monday, March 24, 2025 Shanghai International Convention Center
Meeting Room:
Session I: CMP
Session Chair: Xinping Qu
13:30-13:35 | Opening Remarks |
**13:35-14:05 | Grinding and Chemical Mechanical Polishing Applications in Advanced Packaging |
Xinchun Lu, Hwatsing Technology Co.,Ltd | |
*14:05-14:30 | Analysis of thermal effects in chemical mechanical planarization (CMP) |
Taesung Kim, Sungkyunkwan University | |
*14:30-14:55 | Application of ultra-low SG hard pad in CMP |
Yijie Luo, Hubei Dinglong Co.Ltd. | |
14:55-15:10 | Backside Chipping improvement Study On Hybrid Bonding Process |
Liang Tian, Semiconductor Manufacturing North China ( Beijing ) Corp | |
15:10-15:25 | A Novel Dynamic Hypergraph Attention Framework for The Prediction of Removal Rate in Chemical Mechanical Polishing Process |
Jie Cheng, China University of Mining & Technology-Beijing | |
15:30-17:00 | Poster Session |
Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room:
Session II: CLEANING and POST CMP CLEANING
Session Chair: Jingxun Fang
*09:00-09:25 | Challenges and Solutions of Wet Processes in Semiconductor Manufacturing |
Zhiyong Xie, Beijing NAURA Technology Group Co., Ltd. | |
*09:25-09:50 | The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process |
Shu Yang, ACM | |
*09:50-10:15 | Post Metal CMP Cleaning Technology Processes and Materials |
Guanghong Luo, Yantai Xianhua Polymer Materials Ltd. | |
10:15-10:30 | Experimental Investigation of Physical Cleaning Using Supercritical CO2 on Contaminated Substrates |
Dayoung Yu, Sungkyunkwan University | |
10:30-10:45 | Coffee Break |
Session III: METAL CMP
Session Chair: Jie Cheng
*10:45-11:10 | Improvement of W CMP Erosion Defect and Planarization Performance |
Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation | |
11:10-11:25 | RTPC X Pre-Thickness Control Function on Metal CMP Layer |
Mingtao Luo, Applied Materials | |
11:25-11:40 | Effect of Sulfur-Containing Corrosion Inhibitors on the Selection Ratio of Removal Rate for Ru Based Copper Interconnects |
Zheng Wu, Hebei University of Technology | |
11:40-13:30 | Lunch Break |
Session IV: Dielectric CMP
Session Chair: Baoguo Zhang
*13:30-13:55 | Uniformity and Defect Improvement in Dielectric CMP with Pad Dressing Optimization |
Yu Yang, Shanghai Huali Integrated Circuit Corporation | |
*13:55-14:20 | Retaining Ring Waer Study with Ceria Slurry for Chemical Mechanical Planarization |
JialiangHuang, Anji Microelectronics Technology (Shanghai) Co., Ltd. | |
14:20-14:35 | Mesoporous CeO2 Particle Abrasives with High Specific Surface Area for Enhanced Chemical Mechanical Polishing Performanc |
Wei Yuan, Inner Mongolia University | |
14:35-14:50 | FullVision Endpoint System Application on Thick Dielectric Film CMP Uniformity Control |
Weihan Zhu, Applied Materials | |
14:50-15:05 | Coffee Break |
Session V: COMPOUND CMP
Session Chair: Shoutian Li
15:05-15:20 | Use Damascus CMP to fabricate IGZO transistor in advanced Dram technology |
Ming Zeng, Beijing Superstring Academy of Memory Technology | |
15:20-15:35 | Effect of Surfactants on the Properties of C-, A- And M-Plane Sapphire CMP |
Bin Hu, Hebei University of Technology | |
15:35-15:50 | Study on the efficiency enhancement of chemical mechanical polishing of gallium nitride by acetic acid |
Wenhao Xian, Hebei University of Technology | |
15:50-16:05 | Study on the enhancement of surface quality of polyimide films by chemical mechanical polishing |
Yafei Yin, Hebei University of Technology | |
16:05-16:20 | A wafer-level CMP multi-physics modeling for IC manufacturing |
Zhiwei Zhang, Zhejiang University |
Poster Session: | |
Impact of Carrier Lining Structure on the Wafer Edge Stress in Chemical Mechanical Double-Sided Polishing | |
Yiran Liu, Shanghai Institute of IC Materials | |
Study on the removal rate and electrochemical corrosion of titanium in chemical mechanical polishing | |
Ziyi Cao, Hebei University of Technology | |
22 AL gate change W gate improve for NMOS performance | |
Yanhua Cai, Shanghai Huali Integrated Circuit Corp. | |
The Novel Strategy of Pattern Gate High Loading Controlling in ILD0 CMP Process | |
Shuxiang Wang, Shanghai Huali Integrated Circuit Corp. | |
Application and Improvement of CU CMP Thickness Control Method Based on R2R System | |
Cheng Liu, Shanghai Huali Integrated Circuit Corp. | |
Study of Metal Film Thickness on Endpoint Detection in Chemical Mechanical Polishing (CMP) | |
Cheng Liu, Shanghai Huali Integrated Circuit Corp. | |
Improvement of Polishing Fluid for Copper Targets by Polyethylene Glycol | |
Jiangtao Qiang, Hebei University of Technology | |
Study on the influence of surfactant concentration on the planarization effect of quartz wafers | |
Zian Ba, Hebei University of Technology | |
Effect of H2O2 on Poly Silicon Chemical Mechanical Planarization Particle Defect | |
Chenchen Yang, Semiconductor Technology Innovation Center (Beijing) Corporation | |
Application and mechanism research of novel green chelating agent in CMP | |
Lijun Dong, Hebei University of Technology | |
Hybrid Bonding Cu CMP Process Development | |
Yongbin Wei, Applied Materials | |
Investigation of Fe-Complex Catalysts in Tungsten Chemical Mechanical Polishing (CMP) with Passivation Layer Formation and Hydroxyl Radical Generation | |
Hyunho Kim, Sungkyunkwan University | |
Effect Of Green Surfactant ADS On Properties Of COPPER CMP SLURRY | |
Jiahui Li, Hebei University of Technology | |
Pad physical properties Effects on Removal Rate in a STI Ceria CMP Process | |
Jitao Chen, Shanghai Huali Integrated Circuit Corporation | |
Study On the Relationship Between Transmittance and Polish Time | |
Wangbing Li, Shanghai Huali Integrated Circuit Corporation | |
Ebara Tungsten CMP process defect improvement | |
Tian Ding, Shanghai Huali Integrated Circuit Corporation | |
N28 Tech Node Metal CMP Profile Uniformity and Defectivity Improvement by RTPC-X MPC and JMP DOE Analysis | |
Likun Cheng, Applied Materials | |
RTPC X and RTPC XE application on Cu CMP | |
Yifeng Zheng, Applied Materials | |
Innovative Process Development on Wafer Quality & Throughput in SiC CMP | |
Zhenxing Song, Applied Materials | |
STI CMP Uniformity Improvement by WIW iAPC | |
Yuan Li, Applied Materials | |
CU CMP 65nm intermetal residue issue solution | |
Ben Gu, Applied Materials | |
Improvement of UTM CU CMP Profile Uniformity by RTPC-X Endpoint System | |
Mingzheng Han, Applied Materials | |
28nm SOI Tungsten CMP HDF step low range of post thickness achieved by RTPC X | |
Wanli Xing, Applied Materials | |
Accurate Profile Control of CMP Pad During Polishing Process | |
Yanjun Yu, Applied Materials | |
A Novel Cu Barrier CMP Process Tuning Study for Throughput Improvement | |
Jiaming Xu, Applied Materials | |
Excellent Particle Performance with Brush Gap Optimization in Wafer House CMP Process | |
Qiang Chen, Applied Materials | |
Poly CMP Surface Particle Improvement CIP | |
Tao Ni, Applied Materials | |
28HKMG STI inline performance improvement with FVXE application in | |
Mengyao Liu, Applied Materials | |
LK Defect improvement CIP in high-end wafer house product | |
Siyuan Pang, Applied Materials | |
Study on Chemical Mechanical polishing efficiency of single Crystal AlN by different abrasives | |
Shitong Liu, Hebei University of Technology | |
FullVision™ NIR Endpoint for Si CMP TTV improvement | |
Haodong Huang, Applied Materials | |
The Effective Method of Cu Defect Improvement with New CIP Head Wash Nozzle | |
Mengxia Li, Applied Materials | |
OX and Cu selectivity Investigation on Cu CMP | |
Kun Zhang, Applied Materials | |
HPPC Close Loop Control for FEOL CMP Process Stability and Productivity Improvement | |
Na Xiao, Applied Materials | |
New optimized method to Slurry Arm for Metal RR NU Improvement | |
Weiguo Wang, Applied Materials | |
Cu defect improvement with BB2.0 function | |
Kewen Wang, Applied Materials | |
Cu IM CMP Rs Control Capability Improvement | |
Youlai Xiang, Applied Materials | |
Ceria Polishing Abrasives with Enhanced Dispersion Stability Across Wide pH Range | |
Junjie Xue, Inner Mongolia University |