Symposium Chair: Prof. Xinping Qu, Fudan University, China


** to designate keynote talk - 30 min      
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Monday, March 24, 2025 Shanghai International Convention Center
Meeting Room:

Session I: CMP
Session Chair: Xinping Qu
13:30-13:35 Opening Remarks
   
**13:35-14:05 Grinding and Chemical Mechanical Polishing Applications in Advanced Packaging
  Xinchun Lu, Hwatsing Technology Co.,Ltd
*14:05-14:30 Analysis of thermal effects in chemical mechanical planarization (CMP)
  Taesung Kim, Sungkyunkwan University
*14:30-14:55 Application of ultra-low SG hard pad in CMP
  Yijie Luo, Hubei Dinglong Co.Ltd.
14:55-15:10 Backside Chipping improvement Study On Hybrid Bonding Process
  Liang Tian, Semiconductor Manufacturing North China ( Beijing ) Corp
15:10-15:25 A Novel Dynamic Hypergraph Attention Framework for The Prediction of Removal Rate in Chemical Mechanical Polishing Process
  Jie Cheng, China University of Mining & Technology-Beijing
15:30-17:00 Poster Session
   


Tuesday, March 25, 2025 Shanghai International Convention Center
Meeting Room:


Session II: CLEANING and POST CMP CLEANING
Session Chair: Jingxun Fang
 
*09:00-09:25 Challenges and Solutions of Wet Processes in Semiconductor Manufacturing
  Zhiyong Xie, Beijing NAURA Technology Group Co., Ltd.
*09:25-09:50 The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process
  Shu Yang, ACM
*09:50-10:15 Post Metal CMP Cleaning Technology Processes and Materials
  Guanghong Luo, Yantai Xianhua Polymer Materials Ltd.
10:15-10:30 Experimental Investigation of Physical Cleaning Using Supercritical CO2 on Contaminated Substrates
  Dayoung Yu, Sungkyunkwan University
10:30-10:45 Coffee Break
   

Session III: METAL CMP
Session Chair: Jie Cheng
*10:45-11:10 Improvement of W CMP Erosion Defect and Planarization Performance
  Yu Yao, Semiconductor Technology Innovation Center (Beijing) Corporation
11:10-11:25 RTPC X Pre-Thickness Control Function on Metal CMP Layer
  Mingtao Luo, Applied Materials
11:25-11:40 Effect of Sulfur-Containing Corrosion Inhibitors on the Selection Ratio of Removal Rate for Ru Based Copper Interconnects
  Zheng Wu, Hebei University of Technology
11:40-13:30 Lunch Break
   

Session IV: Dielectric CMP
Session Chair: Baoguo Zhang
*13:30-13:55 Uniformity and Defect Improvement in Dielectric CMP with Pad Dressing Optimization
  Yu Yang, Shanghai Huali Integrated Circuit Corporation
*13:55-14:20 Retaining Ring Waer Study with Ceria Slurry for Chemical Mechanical Planarization
  JialiangHuang, Anji Microelectronics Technology (Shanghai) Co., Ltd.
14:20-14:35 Mesoporous CeO2 Particle Abrasives with High Specific Surface Area for Enhanced Chemical Mechanical Polishing Performanc
  Wei Yuan, Inner Mongolia University
14:35-14:50 FullVision Endpoint System Application on Thick Dielectric Film CMP Uniformity Control
  Weihan Zhu, Applied Materials
14:50-15:05 Coffee Break
   


Session V: COMPOUND CMP
Session Chair: Shoutian Li
15:05-15:20 Use Damascus CMP to fabricate IGZO transistor in advanced Dram technology
  Ming Zeng, Beijing Superstring Academy of Memory Technology
15:20-15:35 Effect of Surfactants on the Properties of C-, A- And M-Plane Sapphire CMP
  Bin Hu, Hebei University of Technology
15:35-15:50 Study on the efficiency enhancement of chemical mechanical polishing of gallium nitride by acetic acid
  Wenhao Xian, Hebei University of Technology
15:50-16:05 Study on the enhancement of surface quality of polyimide films by chemical mechanical polishing
  Yafei Yin, Hebei University of Technology
16:05-16:20 A wafer-level CMP multi-physics modeling for IC manufacturing
  Zhiwei Zhang, Zhejiang University
Poster Session:
  Impact of Carrier Lining Structure on the Wafer Edge Stress in Chemical Mechanical Double-Sided Polishing
  Yiran Liu, Shanghai Institute of IC Materials
  Study on the removal rate and electrochemical corrosion of titanium in chemical mechanical polishing
  Ziyi Cao, Hebei University of Technology
  22 AL gate change W gate improve for NMOS performance
  Yanhua Cai, Shanghai Huali Integrated Circuit Corp.
  The Novel Strategy of Pattern Gate High Loading Controlling in ILD0 CMP Process
  Shuxiang Wang, Shanghai Huali Integrated Circuit Corp.
  Application and Improvement of CU CMP Thickness Control Method Based on R2R System
  Cheng Liu, Shanghai Huali Integrated Circuit Corp.
  Study of Metal Film Thickness on Endpoint Detection in Chemical Mechanical Polishing (CMP)
  Cheng Liu, Shanghai Huali Integrated Circuit Corp.
  Improvement of Polishing Fluid for Copper Targets by Polyethylene Glycol
  Jiangtao Qiang, Hebei University of Technology
  Study on the influence of surfactant concentration on the planarization effect of quartz wafers
  Zian Ba, Hebei University of Technology
  Effect of H2O2 on Poly Silicon Chemical Mechanical Planarization Particle Defect
  Chenchen Yang, Semiconductor Technology Innovation Center (Beijing) Corporation
  Application and mechanism research of novel green chelating agent in CMP
  Lijun Dong, Hebei University of Technology
  Hybrid Bonding Cu CMP Process Development
  Yongbin Wei, Applied Materials
  Investigation of Fe-Complex Catalysts in Tungsten Chemical Mechanical Polishing (CMP) with Passivation Layer Formation and Hydroxyl Radical Generation
  Hyunho Kim, Sungkyunkwan University
  Effect Of Green Surfactant ADS On Properties Of COPPER CMP SLURRY
  Jiahui Li, Hebei University of Technology
  Pad physical properties Effects on Removal Rate in a STI Ceria CMP Process
  Jitao Chen, Shanghai Huali Integrated Circuit Corporation
  Study On the Relationship Between Transmittance and Polish Time
  Wangbing Li, Shanghai Huali Integrated Circuit Corporation
  Ebara Tungsten CMP process defect improvement
  Tian Ding, Shanghai Huali Integrated Circuit Corporation
  N28 Tech Node Metal CMP Profile Uniformity and Defectivity Improvement by RTPC-X MPC and JMP DOE Analysis
  Likun Cheng, Applied Materials
  RTPC X and RTPC XE application on Cu CMP
  Yifeng Zheng, Applied Materials
  Innovative Process Development on Wafer Quality & Throughput in SiC CMP
  Zhenxing Song, Applied Materials
  STI CMP Uniformity Improvement by WIW iAPC
  Yuan Li, Applied Materials
  CU CMP 65nm intermetal residue issue solution
  Ben Gu, Applied Materials
  Improvement of UTM CU CMP Profile Uniformity by RTPC-X Endpoint System
  Mingzheng Han, Applied Materials
  28nm SOI Tungsten CMP HDF step low range of post thickness achieved by RTPC X
  Wanli Xing, Applied Materials
  Accurate Profile Control of CMP Pad During Polishing Process
  Yanjun Yu, Applied Materials
  A Novel Cu Barrier CMP Process Tuning Study for Throughput Improvement
  Jiaming Xu, Applied Materials
  Excellent Particle Performance with Brush Gap Optimization in Wafer House CMP Process
  Qiang Chen, Applied Materials
  Poly CMP Surface Particle Improvement CIP
  Tao Ni, Applied Materials
  28HKMG STI inline performance improvement with FVXE application in
  Mengyao Liu, Applied Materials
  LK Defect improvement CIP in high-end wafer house product
  Siyuan Pang, Applied Materials
  Study on Chemical Mechanical polishing efficiency of single Crystal AlN by different abrasives
  Shitong Liu, Hebei University of Technology
  FullVision™ NIR Endpoint for Si CMP TTV improvement
  Haodong Huang, Applied Materials
  The Effective Method of Cu Defect Improvement with New CIP Head Wash Nozzle
  Mengxia Li, Applied Materials
  OX and Cu selectivity Investigation on Cu CMP
  Kun Zhang, Applied Materials
  HPPC Close Loop Control for FEOL CMP Process Stability and Productivity Improvement
  Na Xiao, Applied Materials
  New optimized method to Slurry Arm for Metal RR NU Improvement
  Weiguo Wang, Applied Materials
  Cu defect improvement with BB2.0 function
  Kewen Wang, Applied Materials
  Cu IM CMP Rs Control Capability Improvement
  Youlai Xiang, Applied Materials
  Ceria Polishing Abrasives with Enhanced Dispersion Stability Across Wide pH Range
  Junjie Xue, Inner Mongolia University