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March 14-16,2018
Shanghai New International Expo Centre

Symposium V: CMP and Post-Polish Cleaning


(** to designate keynote talk, * to designate invite talk)

Sunday, March 12, 2017 Shanghai International Convention Center
Meeting Room: 5A

Session I: CMP fundamentals and Manufacturing
Session Chair: Yuchun Wang


**13:30-14:00 Innovations by Serendipity
  Manabu Tsujimura, Ebara
*14:00-14:25 Replacement Metal Gate (RMG) CMP for 14nm Transistor Scaling: Overview, Challenges and Opportunities
  Hong Jin Kim, Globalfoundries
*14:25-14:50 Nano Scale Interface Control for 28nm Cu CMP through Cu/Barrier Slurries
  Zhijie Zhang, Semiconductor Manufacturing North China (Beijing) Corp.
14:50-15:15 Model of Defect Forming During Post Cleaning of W CMP and Its Improving Solution
  Zigui Cao, Huahong Grace Semiconductor Manufacturing Corporation
15:15-15:30 Coffee Break
   


Session II: CMP Particle Technology
Session Chair: David Huang


*15:30-15:55 Abrasive Particle Trajectories and Material Removal Non-uniformity during Chemical Mechanical Polishing
  Prof. S.V. Babu, Clarkson University
*15:55-16:20 Application of Particle/Aerosol Technology to CMP Process Analysis
  Taesung Kim, Sungkyunkwan University
*16:20-16:45 CMP slurry metrology to meet the industry demand
  Rashid Mavliev, Ipgrip Inc
   
Poster Session: Location: Foyer of Yangtze River Hall
Coffee Break Development of a Standard Evaluation System to Characterize and Quantify Pad Foam Morphology in Chemical Mechanical Polishing (CMP)
  ZHICHAO LI, North Carolina Agricultural & Technical State University
  An Overview of Geometric Design for Diamond Disc Conditioner in Chemical Mechanical Planarization (CMP)
  ZHICHAO LI, North Carolina Agricultural & Technical State University
  A Systematic Study on Processing Specifications for Manufacturing Sapphire Wafers
  ZHICHAO LI, North Carolina Agricultural & Technical State University
  Application of in-situ profile control by Fullvision in Oxide CMP
  Changxing Tan, Applied Materials China
  Optimization of Slurry and Process Parameter on Chemical Mechanical Polishing of Cr-doped Sb2Te3 Film
  Ruifang Huo, Tianjin University of Technology
  STUDY OF WEAKLY ALKALINE SLURRY FOR COPPER BARRIER CMP ON MANUFACTURE PLATFORM
  Jin Kang, SMIC


Monday, March 13, 2017 Shanghai International Convention Center
Meeting Room: 5A

Session III: Advanced CMP Process
Session Chair: KC Wu


*8:30-8:55 Challenges in CMP Defects of 7nm Device and its improvement opportunities
  Dr. Ji Chul Yang, Globalfoundries
8:55-9:10 SiOC CMP Developed and Implemented in 7nm and Beyond
  Huang Haigou, Globalfoundries
*9:10-9:35 Impact of Wafer Transfer Process on STI CMP Scratches
  Fan Bai, Semiconductor Manufacturing North China (Beijing) Corp.
9:35-9:50 Research and solution of STI CMP dishing and uniformity improve for 28LP
  Zhang Lei, Shanghai Huali Microelectronics Corporation
9:50-10:05 Coffee Break
   

Session IV: CMP consumables
Session Chair: Johnson Lin


*10:05-10:30 A New Acidic ILD Slurry Formulation for Advanced CMP
  Yi Guo, Dow Electronic Materials
10:30-10:45 Settling of Colloidal Silica Particles in CMP Slurry:Monitoring, Effect, and Handling
  Jie Lin, Fujimi Corporation
*10:45-11:10 SiN Slurry with high selectivity
  Wenting Zhou, Anji Microelectronics (Shanghai) Co., Ltd.
11:10-12:50 Lunch Break
   

Session V: New CMP Applications and Equipment
Session Chair: Xinchun Lu


*12:50-13:15 Outsourced CMP for Rapid Development and Efficient Manufacturing
  Robert L. Rhoades, Entrepix, Inc.
*13:15-13:40 Chemical Mechanical Planarization – Building Stacked Devices
  Viorel Balan, Univ. Grenoble Alpes
*13:40-14:05 Cu CMP Dishing and Erosion Optimization for Hybrid Bonding Technology
  GuangYi Wang, Wuhan Xinxin Semiconductor Manufacturing Co., Anji Microelectronics
*14:05-14:30 Study of Electro-Kinetic Force Assisted Chemical Mechanical Polishing for Through-Silicon-Via Wafer Planarization
  CHAO-CHANG CHEN, National Taiwan University of Science and Technology
14:30-14:45 Process Stability and Tool capacity Improvement with 150mm profiler and 200mm Contour Heads
  Yanghua He, Qorvo, Inc
14:45-15:00 Coffee Break
   

Session VI: TBD
Session chair: TBD


15:00 TBD
  TBD